公开(公告)号：US09487405B2

公开(公告)日：2016-11-08

申请号：US13826521

申请日：2013-03-14

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang Whan Park ,  Kyoung Sop Han ,  Sung Ho Yun ,  Jin Oh Yang ,  Gyoung Sun Cho ,  Mi Rae Youm ,  Yung Chul Jo

IPC: C01B31/36

CPC classification number: C01B31/36 ,  C01B32/956

Abstract: Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.

Abstract translation: 本发明公开了一种高纯度SiC粉末的制造方法，更具体地说，涉及一种以固相碳源为原料制造具有高纯度的SiC粉末的方法，所述SiC粉末是由由 金属硅和二氧化硅粉末，其中通过将气相硅源的组成改变为固相碳源摩尔比容易控制SiC粉末的尺寸和结晶相，并且其温度和时间 热处理。