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    Deflection array apparatus for multi-electron beam system
    1.
    发明授权
    Deflection array apparatus for multi-electron beam system 有权

    公开(公告)号：US10748739B2

    公开(公告)日：2020-08-18

    申请号：US16230325

    申请日：2018-12-21

    Applicant: KLA-Tencor Corporation

    Inventor： Xinrong Jiang ,  Christopher Sears

    IPC: H01J37/12 ,  H01J37/06

    Abstract: An optical characterization system utilizing a micro-lens array (MLA) is provided. The system may include an electron source and a MLA including a micro-deflection array (MDA). The MDA may include an insulator substrate and a plurality of hexapole electrostatic deflectors disposed on the insulator substrate. The MDA may further include a plurality of voltage connecting lines configured to electrically couple the plurality of hexapole electrostatic deflectors to one or more voltage sources. The MDA may be configured to split a primary electron beam from the electron source into a plurality of primary electron beamlets. The system may be configured to focus the plurality of primary electron beamlets at a wafer plane.

    Magnetically Microfocused Electron Emission Source
    2.
    发明申请
    Magnetically Microfocused Electron Emission Source 审中-公开

    公开(公告)号：US20200013579A1

    公开(公告)日：2020-01-09

    申请号：US16450242

    申请日：2019-06-24

    Applicant: KLA-Tencor Corporation

    Inventor： Christopher Sears

    IPC: H01J37/143 ,  H01J37/28

    Abstract: A magnetically microfocused electron emission source apparatus is disclosed. The apparatus may include a magnetic emitter unit, wherein the magnetic emitter unit comprises an emitter. Further, the magnetic emitter unit may include one or more magnetic portions formed from one or more magnetic materials, wherein the one or more magnetic portions of the magnetic emitter unit are configured to generate a magnetic field proximate to a tip of the emitter of the magnetic emitter unit for enhancing focusing of the emitted electrons from the electron emitter.

    Wafer Grounding Using Localized Plasma Source
    6.
    发明申请
    Wafer Grounding Using Localized Plasma Source 有权
    使用局部等离子体源的晶圆接地

    公开(公告)号：US20150123542A1

    公开(公告)日：2015-05-07

    申请号：US14527301

    申请日：2014-10-29

    Applicant: KLA-Tencor Corporation

    Inventor： Christopher Sears

    IPC: H05H1/46 ,  H01L21/683

    CPC classification number: H05H1/46 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32541 ,  H01L21/683 ,  H05H1/48 ,  H05H2001/483

    Abstract: An apparatus may include a substrate support portion, a plasma generation chamber, electrodes, and a power source. The substrate support portion supports a substrate including an insulating layer and a substrate bulk. The plasma generation chamber may include chamber wall portions, a gas port, and a plasma application aperture and is configured to contain a gas. The plasma application aperture may be covered by a portion of the substrate. Each electrode may protrude into or extend into an interior portion of the plasma generation chamber. The power source may be coupled to a particular electrode, and the power source may be configured to apply a voltage to the particular electrode. Application of the voltage to the particular electrode generates a plasma within the plasma generation chamber, whereby generation of the plasma results in a conductive path through the insulating layer of the substrate between the plasma and the substrate bulk.

    Abstract translation: 设备可以包括基板支撑部分，等离子体产生室，电极和电源。 衬底支撑部分支撑包括绝缘层和衬底本体的衬底。 等离子体产生室可以包括室壁部分，气体端口和等离子体施加孔，并且构造成容纳气体。 等离子体施加孔可以被衬底的一部分覆盖。 每个电极可以突出到或延伸到等离子体产生室的内部。 电源可以耦合到特定电极，并且电源可以被配置为向特定电极施加电压。 电压施加到特定电极在等离子体产生室内产生等离子体，由此产生等离子体导致穿过等离子体和基板体之间的基板绝缘层的导电路径。

    High resolution electron energy analyzer
    7.
    发明授权
    High resolution electron energy analyzer 有权

    公开(公告)号：US10964522B2

    公开(公告)日：2021-03-30

    申请号：US16298755

    申请日：2019-03-11

    Applicant: KLA-Tencor Corporation

    Inventor： Xinrong Jiang ,  Christopher Sears ,  Nikolai Chubun

    IPC: H01J37/05 ,  H01J49/48

    Abstract: A high-resolution electron energy analyzer is disclosed. In one embodiment, the electron energy analyzer includes an electrostatic lens configured to generate an energy-analyzing field region, decelerate electrons of an electron beam generated by an electron source, and direct the decelerated electrons of the electron beam to the energy-analyzing field region. In another embodiment, the electron energy analyzer includes an electron detector configured to receive one or more electrons passed through the energy-analyzing field region. In another embodiment, the electron detector is further configured to generate one or more signals based on the one or more received electrons.

    Method and system for charge control for imaging floating metal structures on non-conducting substrates
    8.
    发明授权
    Method and system for charge control for imaging floating metal structures on non-conducting substrates 有权

    公开(公告)号：US10460903B2

    公开(公告)日：2019-10-29

    申请号：US15387388

    申请日：2016-12-21

    Applicant: KLA-Tencor Corporation

    Inventor： Arjun Hegde ,  Luca Grella ,  Christopher Sears

    IPC: H01J37/153 ,  H01J37/10 ,  H01J37/18 ,  H01J37/20 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28

    Abstract: A scanning electron microscopy system is disclosed. The system includes a sample stage configured to secure a sample having conducting structures disposed on an insulating substrate. The system includes an electron-optical column including an electron source configured to generate a primary electron beam and a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of the sample. The system includes a detector assembly configured to detect electrons emanating from the surface of the sample. The system includes a controller communicatively coupled to the detector assembly. The controller is configured to direct the electron-optical column and stage to perform, with the primary electron beam, an alternating series of image scans and flood scans of the portion of the sample, wherein each of the flood scans are performed sequential to one or more of the imaging scans.

    Particle beam inspector with independently-controllable beams
    9.
    发明授权
    Particle beam inspector with independently-controllable beams 有权

    公开(公告)号：US10276346B1

    公开(公告)日：2019-04-30

    申请号：US15281934

    申请日：2016-09-30

    Applicant: KLA-Tencor Corporation

    Inventor： Brian Duffy ,  Amir Azordegan ,  Christopher Sears

    IPC: H01J37/28 ,  H01J37/244 ,  H01J37/147

    Abstract: A multi-beam inspection system includes one or more particle beam sources to generate two or more particle beams, a set of particle control elements configured to independently direct the two or more particle beams to a sample, one or more detectors positioned to receive particles emanating from the sample in response to the two or more particle beams, and a controller communicatively coupled to the one or more detectors. The controller includes one or more processors to generate two or more inspection datasets associated with the particles received by the one or more detectors.

    Method and system for aberration correction in an electron beam system
    10.
    发明授权
    Method and system for aberration correction in an electron beam system 有权

    公开(公告)号：US10224177B2

    公开(公告)日：2019-03-05

    申请号：US15148331

    申请日：2016-05-06

    Applicant: KLA-Tencor Corporation

    Inventor： Christopher Sears ,  Xinrong Jiang ,  Sameet K. Shriyan

    IPC: H01J37/28 ,  H01J37/147

    Abstract: A scanning electron microscopy system is disclosed. The system includes an electron beam source configured to generate a primary electron beam. The system includes a sample stage configured to secure a sample. The system includes a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of the sample. The set of electron-optical elements includes an upper deflector assembly and a lower deflector assembly. The upper deflector assembly is configured to compensate for chromatic aberration in the primary electron beam caused by the lower deflector assembly. In addition, the system includes a detector assembly configured to detect electrons emanating from the surface of the sample.

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