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    Methods And Systems For Measurement Of Thick Films And High Aspect Ratio Structures
    2.
    发明申请
    Methods And Systems For Measurement Of Thick Films And High Aspect Ratio Structures 审中-公开

    公开(公告)号：US20200284733A1

    公开(公告)日：2020-09-10

    申请号：US16879531

    申请日：2020-05-20

    Applicant: KLA Corporation

    Inventor： Noam Sapiens ,  Shankar Krishnan ,  David Y. Wang ,  Alexander Buettner ,  Kerstin Purrucker ,  Kevin A. Peterlinz

    IPC: G01N21/95 ,  G01B11/06 ,  G01J3/42 ,  G01N21/956 ,  H01L21/66 ,  G01J3/02 ,  G01J3/36 ,  G01J3/10 ,  G01J3/28

    Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

    Mid-Infrared Spectroscopy For Measurement Of High Aspect Ratio Structures
    3.
    发明申请
    Mid-Infrared Spectroscopy For Measurement Of High Aspect Ratio Structures 审中-公开

    公开(公告)号：US20200240907A1

    公开(公告)日：2020-07-30

    申请号：US16741734

    申请日：2020-01-13

    Applicant: KLA Corporation

    Inventor： David Y. Wang ,  Shankar Krishnan ,  Guorong V. Zhuang

    IPC: G01N21/3563 ,  G01N21/47

    Abstract: Methods and systems for performing high throughput spectroscopic measurements of semiconductor structures at mid-infrared wavelengths are presented herein. A Fourier Transform Infrared (FTIR) spectrometer includes one or more measurement channels spanning a wavelength range between 2.5 micrometers and 12 micrometers. The FTIR spectrometer measures a target at multiple different angles of incidence, azimuth angles, different wavelength ranges, different polarization states, or any combination thereof. In some embodiments, illumination light is provided by a laser sustained plasma (LSP) light source to achieve high brightness and small illumination spot size. In some embodiments, FTIR measurements are performed off-axis from the direction normal to the surface of the wafer. In some embodiments, a Stirling cooler extracts heat from the detector of an FTIR spectrometer. In another aspect, measurements performed by one or more spectrometer measurement channels are combined with measurements performed by a mid-infrared FTIR spectrometer channel to characterize high aspect ratio structures.

    SPECTRAL ANGULAR METROLOGY
    4.
    发明申请
    SPECTRAL ANGULAR METROLOGY 有权

    公开(公告)号：US20250076208A1

    公开(公告)日：2025-03-06

    申请号：US18822901

    申请日：2024-09-03

    Applicant: KLA Corporation

    Inventor： Amnon Manassen ,  Kevin Peterlinz ,  Andrew V. Hill ,  Shankar Krishnan ,  Yonatan Vaknin ,  Ido Dolev ,  Suryanarayanan Ganesan ,  Chao Chang ,  Jongjin Kim ,  David Zimdars

    IPC: G01N21/88 ,  G01N21/95 ,  G01N21/956

    Abstract: A metrology system may include a dual frequency comb source providing a first comb beam with a first repetition rate and a second comb beam with a second repetition rate, a beamsplitter to generate one or more dual frequency comb illumination beams from the first comb beam and the second comb beam, and a beam combiner to form a dual frequency comb illumination beam from the first comb beam and the second comb beam. The system may further include an illumination sub-system to illuminate a sample with the dual frequency comb illumination beam through an objective lens, a collection sub-system to collect sample light from the sample with the objective lens, and a detector to capture a radio-frequency signal based on the sample light. The system may further extract spectral measurement data associated with the sample from the radio-frequency signal and generate metrology measurements based on the spectral measurement data.

    Optics For Measurement Of Thick Films And High Aspect Ratio Structures
    5.
    发明申请
    Optics For Measurement Of Thick Films And High Aspect Ratio Structures 有权

    公开(公告)号：US20240418635A1

    公开(公告)日：2024-12-19

    申请号：US18210558

    申请日：2023-06-15

    Applicant: KLA Corporation

    Inventor： David Y. Wang ,  Shankar Krishnan

    IPC: G01N21/31

    Abstract: Methods and systems for performing spectroscopic ellipsometry measurements of semiconductor structures with reflective collection relay optics having demagnification from the spectrometer slit to the detector are presented herein. The demagnification effectively increases the NA at the detector and reduces the measurement spot size at the wafer imaged onto the detector. In this manner, the demagnification maintains high spectral resolution at the detector, particularly in the ultraviolet wavelength range, e.g., 120-400 nanometers, while maintaining a small collection NA at the wafer, e.g., collection NA less than 0.05. The small collection NA enables high fringe contrast, signal fidelity, and sensitivity, when measuring thick, multiple layer stacks, e.g., 200-300 layers.

    Angle Of Incidence And Azimuth Angle Resolved Spectroscopic Ellipsometry For Semiconductor Metrology
    8.
    发明申请
    Angle Of Incidence And Azimuth Angle Resolved Spectroscopic Ellipsometry For Semiconductor Metrology 有权

    公开(公告)号：US20250076185A1

    公开(公告)日：2025-03-06

    申请号：US18812890

    申请日：2024-08-22

    Applicant: KLA Corporation

    Inventor： Janardan Nath ,  Shankar Krishnan ,  Harish Kashyap

    IPC: G01N21/21

    Abstract: Methods and systems for performing spectroscopic ellipsometry (SE) measurements of semiconductor structures based on data sets resolved in wavelength, azimuth angle, and angle of incidence are presented herein. In some embodiments, machine learning based measurement models are trained to infer estimated values of one or more parameters of interest characterizing a structure under measurement based on SE measurement data resolved in wavelength, azimuth angle, and angle of incidence. In some other embodiments, regression is performed on a physics based measurement model to estimate values of one or more parameters of interest characterizing a structure under measurement. A dispersive element in the collection beam path disperses collected light across the active surface of a detector to resolve collected light according to wavelength and one angular dimension. Furthermore, multiple images are collected by the detector to resolve collected light across the other angular dimension.

    Overlay metrology on bonded wafers
    10.
    发明授权
    Overlay metrology on bonded wafers 有权

    公开(公告)号：US11309202B2

    公开(公告)日：2022-04-19

    申请号：US17028878

    申请日：2020-09-22

    Applicant: KLA Corporation

    Inventor： Shankar Krishnan ,  David Y. Wang ,  Johannes D. de Veer

    IPC: H01L21/68 ,  G01N21/21 ,  G01N21/95 ,  G01B11/06 ,  G01N21/27

    Abstract: A metrology system for characterizing a sample formed from a first wafer and a second wafer bonded at an interface with a metrology target near the interface may include a metrology tool and a controller. The metrology tool may include one or more illumination sources and an illumination sub-system to direct illumination from the one or more illumination sources to the metrology target, a detector, and a collection sub-system to collect light from the sample. The light collected from the sample may include light from the metrology target and light from a top surface of the first wafer, and the collection sub-system is may direct the light from the metrology target to the detector. The controller may execute program instructions causing the one or more processors to generate estimates of one or more parameters associated with the sample based on data received from the detector.

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