公开(公告)号：US20200284733A1

公开(公告)日：2020-09-10

申请号：US16879531

申请日：2020-05-20

Applicant: KLA Corporation

Inventor： Noam Sapiens ,  Shankar Krishnan ,  David Y. Wang ,  Alexander Buettner ,  Kerstin Purrucker ,  Kevin A. Peterlinz

IPC: G01N21/95 ,  G01B11/06 ,  G01J3/42 ,  G01N21/956 ,  H01L21/66 ,  G01J3/02 ,  G01J3/36 ,  G01J3/10 ,  G01J3/28

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

公开(公告)号：US12013355B2

公开(公告)日：2024-06-18

申请号：US17411030

申请日：2021-08-24

Applicant: KLA Corporation

Inventor： David Y. Wang ,  Kerstin Purrucker ,  Michael Friedmann

IPC: G01N23/201

CPC classification number: G01N23/201 ,  G01N2223/054 ,  G01N2223/306 ,  G01N2223/6116

Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, Soft X-Ray (SXR) illumination over a small illumination spot size with a small physical footprint are presented herein. In one aspect, the focusing optics of an SXR based metrology system project an image of the illumination source onto a specimen under measurement with a demagnification of at least 1.25. In a further aspect, an illumination beam path from the x-ray illumination source to the specimen under measurement is less than 2 meters. In another aspect, SXR based measurements are performed with x-ray radiation in the soft x-ray region (i.e., 80-3000 eV). In some embodiments, SXR based measurements are performed at grazing angles of incidence in a range from near zero degrees to 90 degrees. In some embodiments, the illumination optics project an image of an illumination source onto a specimen under measurement with a demagnification of 50, or less.

公开(公告)号：US11119050B2

公开(公告)日：2021-09-14

申请号：US16879531

申请日：2020-05-20

Applicant: KLA Corporation

Inventor： Noam Sapiens ,  Shankar Krishnan ,  David Y. Wang ,  Alexander Buettner ,  Kerstin Purrucker ,  Kevin A. Peterlinz

IPC: G01N21/95 ,  G01B11/06 ,  G01J3/42 ,  G01N21/956 ,  H01L21/66 ,  G01J3/02 ,  G01J3/36 ,  G01J3/10 ,  G01J3/28 ,  G01N21/84 ,  G01N21/21

Abstract: Methods and systems for performing spectroscopic measurements of semiconductor structures including ultraviolet, visible, and infrared wavelengths greater than two micrometers are presented herein. A spectroscopic measurement system includes a combined illumination source including a first illumination source that generates ultraviolet, visible, and near infrared wavelengths (wavelengths less than two micrometers) and a second illumination source that generates mid infrared and long infrared wavelengths (wavelengths of two micrometers and greater). Furthermore, the spectroscopic measurement system includes one or more measurement channels spanning the range of illumination wavelengths employed to perform measurements of semiconductor structures. In some embodiments, the one or more measurement channels simultaneously measure the sample throughout the wavelength range. In some other embodiments, the one or more measurement channels sequentially measure the sample throughout the wavelength range.

公开(公告)号：US20220196576A1

公开(公告)日：2022-06-23

申请号：US17411030

申请日：2021-08-24

Applicant: KLA Corporation

Inventor： David Y. Wang ,  Kerstin Purrucker ,  Michael Friedmann

IPC: G01N23/201

Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, Soft X-Ray (SXR) illumination over a small illumination spot size with a small physical footprint are presented herein. In one aspect, the focusing optics of an SXR based metrology system project an image of the illumination source onto a specimen under measurement with a demagnification of at least 1.25. In a further aspect, an illumination beam path from the x-ray illumination source to the specimen under measurement is less than 2 meters. In another aspect, SXR based measurements are performed with x-ray radiation in the soft x-ray region (i.e., 80-3000 eV). In some embodiments, SXR based measurements are performed at grazing angles of incidence in a range from near zero degrees to 90 degrees. In some embodiments, the illumination optics project an image of an illumination source onto a specimen under measurement with a demagnification of 50, or less.