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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20230078716A1

    公开(公告)日：2023-03-16

    申请号：US17987351

    申请日：2022-11-15

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Toshiki HIKOSAKA ,  Hiroshi ONO ,  Jumpei TAJIMA ,  Masahiko KURAGUCHI ,  Shinya NUNOUE

    IPC分类号： H01L29/423 ,  H01L29/739 ,  H01L29/778

    摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20210184026A1

    公开(公告)日：2021-06-17

    申请号：US17013986

    申请日：2020-09-08

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Jumpei TAJIMA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

    IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/66 ,  H01L29/207

    摘要： According to one embodiment, a semiconductor device includes first, second, and third electrodes, first, second, and third semiconductor layers, and a first insulating member. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. A direction from the first partial region toward the second partial region is along a first direction. The first electrode includes a first electrode portion. A direction from the first electrode portion toward the second electrode is along the first direction. A second direction from the third partial region toward the third electrode crosses the first direction. The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion. At least a portion of the first semiconductor layer is between the third and second semiconductor layers. The first insulating member includes a first insulating portion. The first insulating portion is provided between the third partial region and the third electrode.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER 审中-公开
    半导体发光器件和散热器

    公开(公告)号：US20150349199A1

    公开(公告)日：2015-12-03

    申请号：US14824821

    申请日：2015-08-12

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Koichi TACHIBANA ,  Shigeya KIMURA ,  Hajime NAGO ,  Shinya NUNOUE

    IPC分类号： H01L33/06 ,  H01L33/22 ,  H01L33/02 ,  H01L33/32

    CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01S5/3407 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

    摘要： According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×108 cm−2. The first semiconductor layer of a first conductivity type is provided on the foundation layer and includes a nitride semiconductor. The light emitting part is provided on the first semiconductor layer. The light emitting part includes: a plurality of barrier layers; and a well layer provided between the barrier layers. The well layer has a bandgap energy smaller than a bandgap energy of the barrier layers and has a thickness larger than a thickness of the barrier layers. The second semiconductor layer of a second conductivity type different from the first conductivity type, is provided on the light emitting part and includes a nitride semiconductor.

    摘要翻译： 根据一个实施例，半导体发光器件包括：基底层，第一半导体层，发光部分和第二半导体层。 基础层包括氮化物半导体。 基础层的位错密度不大于5×108cm-2。 第一导电类型的第一半导体层设置在基底层上并且包括氮化物半导体。 发光部分设置在第一半导体层上。 发光部包括：多个阻挡层; 以及设置在阻挡层之间的阱层。 阱层具有小于阻挡层的带隙能量的带隙能量，并且具有比阻挡层的厚度大的厚度。 具有不同于第一导电类型的第二导电类型的第二半导体层设置在发光部分上并且包括氮化物半导体。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光装置及制造半导体发光装置的方法

    公开(公告)号：US20150318435A1

    公开(公告)日：2015-11-05

    申请号：US14798044

    申请日：2015-07-13

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Hajime NAGO ,  Yoshiyuki HARADA ,  Shigeya KIMURA ,  Hisashi YOSHIDA ,  Shinya NUNOUE

    IPC分类号： H01L33/00 ,  H01L33/06 ,  H01S5/343 ,  H01L33/32 ,  H01S5/30

    CPC分类号： H01L33/0075 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/02 ,  H01L33/06 ,  H01L33/325 ,  H01S5/3013 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3206 ,  H01S5/3216 ,  H01S5/34333

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×1020 cm−3 and not more than 3×1020 cm−3. The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2×1018 cm−3.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光层。 p型半导体层包括第一p侧层，第二p侧层和第三p侧层。 p侧区域的Mg的浓度分布包括第一部分，第二部分，第三部分，第四部分，第五部分，第六部分和第七部分。 p侧区域包括发光层，第二p侧层和第三p侧层。 第六部分的Mg浓度不小于1×1020cm-3且不大于3×1020cm-3。 Al浓度在第二位置的最大值的1/100。 第二位置的Mg浓度不小于2×1018cm-3。

    LIGHT EMITTING DEVICE
    6.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20150108521A1

    公开(公告)日：2015-04-23

    申请号：US14471352

    申请日：2014-08-28

    申请人： Kabushiki Kaisha Toshiba

    发明人： Yasushi HATTORI ,  Masahiro KATO ,  Kunio ISHIDA ,  Shinya NUNOUE ,  Yumi FUKUDA

    IPC分类号： H01L33/50

    CPC分类号： H01L33/504 ,  C04B35/597 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3229 ,  C09K11/0883 ,  C09K11/7734 ,  F21K9/64 ,  H01L2224/48091 ,  Y02B20/181 ,  H01L2924/00014

    摘要： A light emitting device according to embodiments includes a light emitting element emitting light with a peak wavelength of 420˜445 nm, a first phosphor emitting light with a peak wavelength of 485˜530 nm, a second phosphor emitting light with a peak wavelength of 530˜580 nm, and a third phosphor emitting light with a peak wavelength of 600˜650 nm. The device emits light having an emission spectrum that has a local minimum value of light intensity between a wavelength of 450˜470 nm or less, the local minimum value being 60% or less of a maximum value of light intensity at a longer wavelength side from the local minimum value, and the device emits light having a color temperature of 4600 K or higher and 5400 K or less.

    摘要翻译： 根据实施方案的发光器件包括发射峰值波长为420〜45nm的光的发光元件，发射峰值波长为485〜530nm的光的第一荧光体，发射峰值波长为530的第二荧光体 〜580nm，以及发射峰值波长为600〜650nm的光的第三荧光体。 该装置发射具有波长为450〜470nm以下的光强度的局部最小值的发射光谱的光，局部最小值为长波长侧的光强度的最大值的60％以下 局部最小值，并且该装置发射色温为4600K以上且5400K以下的光。

    SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER 有权
    半导体发光器件，氮化物半导体层生长衬底和氮化物半导体膜

    公开(公告)号：US20140319460A1

    公开(公告)日：2014-10-30

    申请号：US14330151

    申请日：2014-07-14

    申请人： Kabushiki Kaisha Toshiba

    发明人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

    IPC分类号： H01L33/06 ,  H01L33/32

    CPC分类号： H01L33/06 ,  C30B29/406 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb

    摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层和具有主表面的第二半导体层，以及设置在第一和第二半导体层之间的发光层。 主表面与发光层相对。 第一半导体层具有设置在主表面上的结构体。 结构体是凹陷或突起。 第一结构体的质心与最靠近第一结构的第二结构体的质心对齐。 hb，rb和Rb满足rb /（2·hb）＆nlE; 0.7和rb / Rb <1，其中hb是凹槽的深度，rb是凹部的底部的宽度，Rb是 突起的宽度。