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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20230078716A1

    公开(公告)日：2023-03-16

    申请号：US17987351

    申请日：2022-11-15

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Toshiki HIKOSAKA ,  Hiroshi ONO ,  Jumpei TAJIMA ,  Masahiko KURAGUCHI ,  Shinya NUNOUE

    IPC分类号： H01L29/423 ,  H01L29/739 ,  H01L29/778

    摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20210184026A1

    公开(公告)日：2021-06-17

    申请号：US17013986

    申请日：2020-09-08

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Jumpei TAJIMA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

    IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/66 ,  H01L29/207

    摘要： According to one embodiment, a semiconductor device includes first, second, and third electrodes, first, second, and third semiconductor layers, and a first insulating member. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. A direction from the first partial region toward the second partial region is along a first direction. The first electrode includes a first electrode portion. A direction from the first electrode portion toward the second electrode is along the first direction. A second direction from the third partial region toward the third electrode crosses the first direction. The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion. At least a portion of the first semiconductor layer is between the third and second semiconductor layers. The first insulating member includes a first insulating portion. The first insulating portion is provided between the third partial region and the third electrode.

    SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER 有权
    半导体发光器件，氮化物半导体层生长衬底和氮化物半导体膜

    公开(公告)号：US20140319460A1

    公开(公告)日：2014-10-30

    申请号：US14330151

    申请日：2014-07-14

    申请人： Kabushiki Kaisha Toshiba

    发明人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

    IPC分类号： H01L33/06 ,  H01L33/32

    CPC分类号： H01L33/06 ,  C30B29/406 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb

    摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层和具有主表面的第二半导体层，以及设置在第一和第二半导体层之间的发光层。 主表面与发光层相对。 第一半导体层具有设置在主表面上的结构体。 结构体是凹陷或突起。 第一结构体的质心与最靠近第一结构的第二结构体的质心对齐。 hb，rb和Rb满足rb /（2·hb）＆nlE; 0.7和rb / Rb <1，其中hb是凹槽的深度，rb是凹部的底部的宽度，Rb是 突起的宽度。

    NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE
    9.
    发明公开
    NITRIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230317796A1

    公开(公告)日：2023-10-05

    申请号：US17817789

    申请日：2022-08-05

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    发明人： Toshiki HIKOSAKA ,  Hajime NAGO ,  Hisashi YOSHIDA ,  Jumpei TAJIMA

    IPC分类号： H01L29/15 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

    CPC分类号： H01L29/157 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7785

    摘要： According to one embodiment, a nitride semiconductor includes a nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N, a second nitride region including Alx2Ga1-x2N, and a third nitride region including Alx3Ga1-x3N. The second nitride region is provided between the first and third nitride regions in a first direction from the first nitride region to the second nitride region. The second nitride region includes carbon and oxygen. The first nitride region does not include carbon, or a second carbon concentration in the second nitride region is higher than a first carbon concentration in the first nitride region. The second carbon concentration is higher than a third carbon concentration in the third nitride region. A ratio of a second oxygen concentration in the second nitride region to the second carbon concentration is not less than 1.0 × 10-4 and not more than 1.4 × 10-3.