Semiconductor device, inverter circuit, driving device, vehicle, and elevator

    公开(公告)号:US11276774B2

    公开(公告)日:2022-03-15

    申请号:US16549089

    申请日:2019-08-23

    摘要: An embodiment of a semiconductor device including a silicon carbide layer having a first and a second planes; a first silicon carbide region of first conductivity type in the silicon carbide layer; a second silicon carbide region of second conductivity type in the silicon carbide layer between the first silicon carbide region and the first plane; a third silicon carbide region of the first conductivity type in the silicon carbide layer located between the second silicon carbide region and the first plane; a first electrode located on a side of the first plane; a second electrode located on a side of the second plane; a gate electrode; an aluminum nitride layer containing an aluminum nitride crystal between the second silicon carbide region and the gate electrode; and an insulating layer between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

    Semiconductor device with partial regions having impunity concentrations selected to obtain a high threshold voltage

    公开(公告)号:US10991575B2

    公开(公告)日:2021-04-27

    申请号:US16558504

    申请日:2019-09-03

    IPC分类号: H01L21/02 C30B29/40

    摘要: According to one embodiment, a semiconductor device includes first to third electrodes, and first and second layers. A direction from the first electrode toward the second electrode is aligned with a first direction. A position in the first direction of the third electrode is between positions in the first direction of the first and second electrodes. The first layer includes at least one selected from the group consisting of silicon carbide, silicon, carbon, and germanium. The first layer includes first to sixth partial regions. A concentration of the first impurity in the fourth partial region is higher than a concentration of the first impurity in the fifth partial region and higher than a concentration of the first impurity in the sixth partial region. The second layer includes AlxGa1-xN (0

    SEMICONDUCTOR DEVICE
    5.
    发明申请

    公开(公告)号:US20200185492A1

    公开(公告)日:2020-06-11

    申请号:US16568490

    申请日:2019-09-12

    摘要: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a semiconductor member, and a first crystal member. A direction from the first electrode toward the second electrode is aligned with a first direction. A position in the first direction of the third electrode is between positions in the first direction of the first electrode and the second electrode. The semiconductor member includes at least one selected from the group consisting of silicon carbide, silicon, carbon, and germanium. The semiconductor member includes a first region, and first and second partial regions. The first region is between the first and second electrodes in the first direction. A second direction from the first region toward the third electrode crosses the first direction. The first crystal member is provided between the first and third electrodes in the second direction.

    Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
    8.
    发明授权
    Semiconductor light emitting device and method for manufacturing semiconductor light emitting device 有权
    半导体发光器件及半导体发光器件的制造方法

    公开(公告)号:US09112111B2

    公开(公告)日:2015-08-18

    申请号:US14093925

    申请日:2013-12-02

    摘要: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×1020 cm−3 and not more than 3×1020 cm−3. The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2×1018 cm−3.

    摘要翻译: 根据一个实施例,半导体发光器件包括n型半导体层,p型半导体层和发光层。 p型半导体层包括第一p侧层,第二p侧层和第三p侧层。 p侧区域的Mg的浓度分布包括第一部分,第二部分,第三部分,第四部分,第五部分,第六部分和第七部分。 p侧区域包括发光层,第二p侧层和第三p侧层。 第六部分的Mg浓度不小于1×1020cm-3且不大于3×1020cm-3。 Al浓度在第二位置的最大值的1/100。 第二位置的Mg浓度不小于2×1018cm-3。

    Semiconductor light emitting device
    10.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号:US08872158B2

    公开(公告)日:2014-10-28

    申请号:US14185158

    申请日:2014-02-20

    CPC分类号: H01L33/06 H01L33/04 H01L33/32

    摘要: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AIGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AIGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers.

    摘要翻译: 根据一个实施例,半导体发光器件包括n型半导体层,p型半导体层和发光部分。 n型半导体层包括氮化物半导体。 p型半导体层包括氮化物半导体。 发光部分设置在n型和p型半导体层之间,并且包括n侧阻挡层和第一发光层。 第一发光层包括第一阻挡层,第一阱层和第一AIGaN层。 第一阻挡层设置在n侧势垒层和p型半导体层之间。 第一阱层与n侧和第一阻挡层之间的n侧势垒层接触。 第一AIGaN层设置在第一阱层和第一势垒层之间。 从发光部发出的光的峰值波长λp长于515nm。