- 专利标题： NITRIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE NITRIDE SEMICONDUCTOR
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申请号： US17816562申请日： 2022-08-01
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公开(公告)号： US20230138962A1公开(公告)日： 2023-05-04
- 发明人: Hajime NAGO , Jumpei TAJIMA , Toshiki HIKOSAKA
- 申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 申请人地址： JP Tokyo; JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 当前专利权人地址： JP Tokyo; JP Tokyo
- 优先权： JP2021-176091 20211028
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L29/36 ; H01L29/10
摘要：
According to one embodiment, a nitride semiconductor includes a base body including boron, a first nitride region including Alx1Ga1-x1N (0.98
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