公开(公告)号：US20240274703A1

公开(公告)日：2024-08-15

申请号：US18451218

申请日：2023-08-17

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Yosuke KAJIWARA ,  Miyoko SHIMADA ,  Kento MINAMIKAWA ,  Hiroshi ONO ,  Daimotsu KATO ,  Masahiko KURAGUCHI

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/66462

摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1

公开(公告)号：US20230025093A1

公开(公告)日：2023-01-26

申请号：US17646799

申请日：2022-01-03

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yosuke KAJIWARA ,  Masahiko KURAGUCHI

IPC分类号： H01L29/20 ,  H01L29/417 ,  H01L29/06

摘要： According to one embodiment, a semiconductor device includes first, second, third nitride members, first, second, third electrodes, and a first insulating member. The first nitride member includes a first face along a first plane, a second face along the first plane, and a third face. The third face is connected with the first and second faces between the first and second faces. The third face crosses the first plane. The first face overlaps a part of the first nitride member. The second nitride member includes a first nitride region provided at the first face. The third nitride member includes a first nitride portion provided at the second face. The first electrode includes a first connecting portion. The second electrode includes a second connecting portion. The third electrode includes a first electrode portion. The first insulating member includes a first insulating region.

公开(公告)号：US20230006058A1

公开(公告)日：2023-01-05

申请号：US17652124

申请日：2022-02-23

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yosuke KAJIWARA ,  Masahiko KURAGUCHI

IPC分类号： H01L29/778 ,  H01L29/20

摘要： According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, and a first insulating member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes first to third insulating regions. The fourth partial region includes a first facing region. The fifth partial region includes a second facing region. The first facing region includes a first element. The second facing region does not include the first element, or a concentration of the first element in the second facing region is lower than in the first facing region.

公开(公告)号：US20210184007A1

公开(公告)日：2021-06-17

申请号：US17013959

申请日：2020-09-08

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yosuke KAJIWARA ,  Masahiko KURAGUCHI ,  Akira MUKAI

IPC分类号： H01L29/417 ,  H01L29/778 ,  H01L29/20 ,  H01L29/47 ,  H01L29/51 ,  H01L29/423

摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, first and second insulating members, and a first member. The third electrode includes a first electrode portion. The first electrode portion is between the first and second electrodes. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The first insulating member includes first and second insulating regions. The second insulating member includes first and second insulating portions. The first insulating portion is between the fourth partial region and the first insulating region. The second insulating portion is between the fifth partial region and the second insulating region. The second semiconductor layer includes first, second, and third semiconductor portions.

公开(公告)号：US20200373422A1

公开(公告)日：2020-11-26

申请号：US16799901

申请日：2020-02-25

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Masahiko KURAGUCHI ,  Yosuke KAJIWARA ,  Aya SHINDOME ,  Hiroshi ONO ,  Daimotsu KATO ,  Akira MUKAI

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L29/423 ,  H01L29/66

摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first conductive part, first and second insulating layers. The third electrode includes first and second portions. The first portion is between the first electrode and the second electrode. The first semiconductor layer includes first, second, third, fourth and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor layer includes first and second semiconductor regions. The first conductive part is electrically connected to the first electrode. The first insulating layer includes a first insulating portion. The second insulating layer includes first and second insulating regions.

公开(公告)号：US20200027978A1

公开(公告)日：2020-01-23

申请号：US16292387

申请日：2019-03-05

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

发明人： Yosuke KAJIWARA ,  Daimotsu KATO ,  Masahiko KURAGUCHI

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L21/28

摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor layers, a nitride layer, and an oxide layer. A direction from the second electrode toward the first electrode is aligned with a first direction. A position in the first direction of the third electrode is between the first electrode and the second electrode in the first direction. The first semiconductor layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions in the first direction. The second partial region is between the third and fifth partial regions in the first direction. The nitride layer includes first and second nitride regions. The second semiconductor layer includes first and second semiconductor regions. The oxide layer includes silicon and oxygen. The oxide layer includes first to third oxide regions.

公开(公告)号：US20190088770A1

公开(公告)日：2019-03-21

申请号：US15899925

申请日：2018-02-20

申请人： Kabushiki Kaisha Toshiba

发明人： Jumpei TAJIMA ,  Toshiki HIKOSAKA ,  Kenjiro UESUGI ,  Shigeya KIMURA ,  Masahiko KURAGUCHI ,  Shinya NUNOUE

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/417 ,  H01L21/308 ,  H01L29/205 ,  H01L29/20

摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first layer, a second layer, a third layer, and an insulating layer. A position of the third electrode is between a position of the first electrode and a position of the second electrode. The first layer includes at least one of Alx1Ga1-x1N (0

公开(公告)号：US20180374942A1

公开(公告)日：2018-12-27

申请号：US15893932

申请日：2018-02-12

申请人： Kabushiki Kaisha Toshiba

发明人： Toshiki HIKOSAKA ,  Shigeya KIMURA ,  Shinya NUNOUE ,  Masahiko KURAGUCHI

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/66

摘要： According to one embodiment, a semiconductor device includes first to third electrodes, and first to third semiconductor regions. The third electrode is separated from the second electrode in a first direction. The first semiconductor region includes a first partial region separated from the first electrode, a second partial region separated from the second electrode, and a third partial region separated from the third electrode. The second semiconductor region includes a fourth partial region positioned between the first electrode and the first partial region, a fifth partial region positioned between the second electrode and the second partial region, and a sixth partial region positioned between the third electrode and the third partial region. The third semiconductor region includes a seventh partial region positioned between the second electrode and the fifth partial region and an eighth partial region positioned between the third electrode and the sixth partial region.

公开(公告)号：US20150236103A1

公开(公告)日：2015-08-20

申请号：US14704139

申请日：2015-05-05

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Masahiko KURAGUCHI

IPC分类号： H01L29/20 ,  H01L29/423 ,  H01L29/40 ,  H01L29/78

摘要： The nitride-based semiconductor device includes a carrier traveling layer 1 composed of non-doped AlxGa1-xN (0≦X

摘要翻译： 氮化物类半导体器件包括由非掺杂Al x Ga 1-x N（0＆amp; nl E; X 1）构成的载流子行进层1。 由载流子行进层1形成的阻挡层2，其由具有比载流子传播层1的晶格常数小的晶格常数的非掺杂或n型AlYGa1-YN（0

公开(公告)号：US20150034972A1

公开(公告)日：2015-02-05

申请号：US14447892

申请日：2014-07-31

申请人： Kabushiki Kaisha Toshiba

发明人： Masahiko KURAGUCHI

IPC分类号： H01L29/267 ,  H01L27/12 ,  H01L27/06 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/267 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0617 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/0623 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/808 ,  H01L29/861

摘要： A semiconductor device according to an embodiment includes, a first conductivity type semiconductor substrate including one of Si and SiC; a second conductivity type semiconductor region at a surface of the semiconductor substrate, a GaN-based semiconductor layer on the semiconductor substrate, and a lateral semiconductor element at the GaN-based semiconductor layer and above the semiconductor region, the lateral semiconductor element having a first electrode and a second electrode electrically connected to the semiconductor region.

摘要翻译： 根据实施例的半导体器件包括：包括Si和SiC之一的第一导电类型半导体衬底; 在半导体衬底的表面上的第二导电类型半导体区域，半导体衬底上的GaN基半导体层，以及GaN基半导体层和半导体区域上方的横向半导体元件，该半导体元件具有第一 电极和与半导体区域电连接的第二电极。