公开(公告)号：US20240047534A1

公开(公告)日：2024-02-08

申请号：US18172856

申请日：2023-02-22

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke KAJIWARA ,  Hiroshi ONO ,  Daimotsu KATO ,  Aya SHINDOME ,  Masahiko KURAGUCHI

IPC: H01L29/205 ,  H01L21/02 ,  H01L29/20 ,  H01L29/423

CPC classification number: H01L29/205 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/42368

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first layer, a second layer, and a first insulating layer. The third electrode includes a first electrode portion. The first semiconductor region includes Alx1Ga1-x1N (0≤x1

公开(公告)号：US20240038849A1

公开(公告)日：2024-02-01

申请号：US18172824

申请日：2023-02-22

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke KAJIWARA ,  Aya SHINDOME ,  Masahiko KURAGUCHI

IPC: H01L29/205 ,  H01L21/02 ,  H01L29/20 ,  H01L29/423

CPC classification number: H01L29/205 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/42368

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first nitride region, a second nitride region, and a third nitride region. The first nitride region includes Alx1Ga1-x1N (0≤x1

公开(公告)号：US20230246079A1

公开(公告)日：2023-08-03

申请号：US17820996

申请日：2022-08-19

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke KAJIWARA ,  Masahiko KURAGUCHI ,  Aya SHINDOME ,  Hiroshi ONO

IPC: H01L29/20 ,  H01L29/778 ,  H01L29/423 ,  H01L23/482 ,  H01L29/205

CPC classification number: H01L29/2003 ,  H01L29/7786 ,  H01L29/4238 ,  H01L23/4824 ,  H01L29/42316 ,  H01L29/205

Abstract: According to one embodiment, a semiconductor device includes a semiconductor member, an electrode portion, a pad portion, and first and second conductive members. The semiconductor member includes a first semiconductor layer and a second semiconductor layer. The electrode portion includes a source electrode, a gate electrode including a first gate portion, and a drain electrode. The first gate portion is between the source electrode and the drain electrode. The pad portion includes a drain pad. The first conductive member includes a first conductive portion. The drain pad is between the electrode portion and the first conductive portion. The second conductive member includes at least one of first to third conductive regions. The first conductive portion is between the drain pad and the first conductive region. The electrode portion is between the second conductive region and the third conductive region.

公开(公告)号：US20230061811A1

公开(公告)日：2023-03-02

申请号：US17652971

申请日：2022-03-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Daimotsu KATO ,  Hiroshi ONO ,  Yosuke KAJIWARA ,  Aya SHINDOME ,  Akira MUKAI ,  Po-Chin HUANG ,  Masahiko KURAGUCHI ,  Tatsuo SHIMIZU

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/04

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, first and second insulating members, a compound member, and a nitride member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes first and second insulating portions. The first semiconductor portion is between the fourth partial region and the first insulating portion. The second semiconductor portion is between the fifth partial region and the second insulating portion. The compound member includes first to third compound portions. The nitride member includes first to third nitride portions. The second insulating member includes first and second insulating regions. The first and second insulating regions are between the nitride regions and the third electrode.

公开(公告)号：US20160284831A1

公开(公告)日：2016-09-29

申请号：US15056013

申请日：2016-02-29

Applicant: Kabushiki Kaisha Toshiba

Inventor： Aya SHINDOME ,  Masahiko KURAGUCHI ,  Hisashi SAITO ,  Shigeto FUKATSU ,  Miki YUMOTO ,  Yosuke KAJIWARA

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/423 ,  H01L21/265 ,  H01L21/266 ,  H01L21/76 ,  H01L29/66 ,  H01L29/20 ,  H01L29/06

CPC classification number: H01L21/2654 ,  H01L21/7605 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/7786

Abstract: A semiconductor device of an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a larger bandgap than the first GaN-based semiconductor layer, a source electrode provided on the second GaN-based semiconductor layer, a drain electrode provided on the second GaN-based semiconductor layer, a recess provided between the source electrode and the drain electrode in the second GaN-based semiconductor layer, a gate insulating film provided on a surface of the recess, and a gate electrode provided on the gate insulating film and having an end portion in a gate width direction, located in the recess.

Abstract translation: 实施例的半导体器件包括第一GaN基半导体层，设置在第一GaN基半导体层上并具有比第一GaN基半导体层更大的带隙的第二GaN基半导体层，设置在第一GaN基半导体层上的源电极 第二GaN基半导体层，设置在第二GaN基半导体层上的漏电极，设置在第二GaN基半导体层中的源极和漏电极之间的凹部，设置在第二GaN基半导体层的表面上的栅极绝缘膜 所述凹部和设置在所述栅极绝缘膜上并且具有位于所述凹部中的栅极宽度方向上的端部的栅电极。

公开(公告)号：US20240313100A1

公开(公告)日：2024-09-19

申请号：US18361647

申请日：2023-07-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Daimotsu KATO ,  Yosuke KAJIWARA ,  Hiroshi ONO ,  Aya SHINDOME ,  Ikuo FUJIWARA ,  Masahiko KURAGUCHI ,  Tatsuo SHIMIZU

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/36

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/36

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1

公开(公告)号：US20220231155A1

公开(公告)日：2022-07-21

申请号：US17398546

申请日：2021-08-10

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke KAJIWARA ,  Hiroshi ONO ,  Daimotsu KATO ,  Akira MUKAI ,  Masahiko KURAGUCHI

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, first and second insulating members. The third electrode includes a first electrode portion. The first electrode portion is between the first electrode and the second electrode. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes a first insulating portion. The first insulating portion is between the third and first electrode portions. The second insulating member includes first and second insulating regions. The first insulating region is between the first electrode and the first electrode portion. The second insulating region is between the first insulating region and the first electrode portion.

公开(公告)号：US20210384337A1

公开(公告)日：2021-12-09

申请号：US17407851

申请日：2021-08-20

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Daimotsu KATO ,  Yosuke KAJIWARA ,  Akira MUKAI ,  Aya SHINDOME ,  Hiroshi ONO ,  Masahiko KURAGUCHI

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/06 ,  H01L29/66 ,  H01L29/423

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1−x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1−x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1−x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.

公开(公告)号：US20210167207A1

公开(公告)日：2021-06-03

申请号：US17013973

申请日：2020-09-08

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke KAJIWARA ,  Masahiko KURAGUCHI

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/423 ,  H01L29/417

Abstract: According to one embodiment, a semiconductor device includes a semiconductor member, a first source electrode, a first gate electrode, a first drain electrode, a source pad part, a first source connection part, and an insulating part. The semiconductor member includes first and second semiconductor layers. The first gate electrode includes first to fourth portions. The first source electrode is between the first and second portions in a first direction, and is between the third and fourth portions in a second. The first drain electrode extends along the first direction. The first source electrode is between the third portion and the first drain electrode in the second direction. The first source connection part electrically connects the first source electrode and the source pad part. A portion of the first insulating region of the insulating part is between the first portion and the first source connection part.

公开(公告)号：US20210066486A1

公开(公告)日：2021-03-04

申请号：US16802315

申请日：2020-02-26

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke KAJIWARA ,  Hiroshi ONO ,  Jumpei TAJIMA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE ,  Masahiko KURAGUCHI

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L29/06 ,  H01L29/36 ,  H01L29/51 ,  H01L29/417 ,  H01L29/423

Abstract: According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, and an insulating part. The third electrode is between the first and second electrodes in a first direction from the first electrode toward the second electrode. The first semiconductor region includes Alx1Ga1-x1N and includes first to fifth partial regions. A second direction from the first partial region toward the first electrode crosses the first direction. The second semiconductor region includes Alx2Ga1-x2N and includes sixth and seventh partial regions. The third semiconductor region includes Alx3Ga1-x3N and includes an eighth partial region between the fifth and seventh partial regions. The fourth semiconductor region includes Alx4Ga1-x4N and includes a first portion between the fifth and eighth partial regions. The fourth semiconductor region includes a first element not included the first to third semiconductor regions. The insulating part includes first to third insulating regions.