知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

16 条记录 (耗时 0.021 秒)

    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20160020314A1

    公开(公告)日：2016-01-21

    申请号：US14870198

    申请日：2015-09-30

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hisashi SAITO ,  Masahiko Kuraguchi ,  Hitoshi Sugiyama

    IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/423 ,  H01L29/20

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/4236 ,  H01L29/7783

    摘要： A semiconductor device according to an embodiment includes a first semiconductor layer of a first GaN based semiconductor, a second semiconductor layer of a second GaN based semiconductor having a band gap narrower than the first GaN based semiconductor, a third semiconductor layer of a third GaN based semiconductor having a band gap wider than the second GaN based semiconductor, a fourth semiconductor layer of a fourth GaN based semiconductor having a band gap narrower than the third GaN based semiconductor, a fifth semiconductor layer of a fifth GaN based semiconductor having a band gap wider than the fourth GaN based semiconductor, a gate dielectric provided directly on the third semiconductor layer, the fourth semiconductor layer, and the fifth semiconductor layer, a gate electrode provided on the gate dielectric, a source and drain electrodes provided above the fifth semiconductor layer.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150263153A1

    公开(公告)日：2015-09-17

    申请号：US14612471

    申请日：2015-02-03

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hisashi SAITO ,  Masahiko KURAGUCHI ,  Takashi SHINOHE

    IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/20

    CPC分类号： H01L29/0634 ,  H01L29/0847 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/7786

    摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer; a second semiconductor layer having a larger band gap than the first semiconductor layer; a third semiconductor layer having a smaller band gap than the second semiconductor layer; a first electrode being in contact with the third semiconductor layer; a second electrode being in contact with the third semiconductor layer; and a third electrode provided between the third semiconductor layer in contact with the first electrode, the second semiconductor layer directly below the first electrode, and the first semiconductor layer directly below the first electrode, and the third semiconductor layer in contact with the second electrode, the second semiconductor layer directly below the second electrode, and the first semiconductor layer directly below the second electrode, being in contact with the third semiconductor layer, the second semiconductor layer, and the first semiconductor layer via insulating film.

    摘要翻译： 根据一个实施例，半导体器件包括第一半导体层; 具有比所述第一半导体层更大的带隙的第二半导体层; 具有比所述第二半导体层更小的带隙的第三半导体层; 与第三半导体层接触的第一电极; 与第三半导体层接触的第二电极; 以及第三电极，设置在与第一电极接触的第三半导体层之间，第一电极正下方的第二半导体层和第一电极正下方的第一半导体层，以及与第二电极接触的第三半导体层， 直接位于第二电极正下方的第二半导体层，以及直接位于第二电极正下方的第一半导体层，经由绝缘膜与第三半导体层，第二半导体层和第一半导体层接触。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20170278934A1

    公开(公告)日：2017-09-28

    申请号：US15392210

    申请日：2016-12-28

    申请人： Kabushiki Kaisha Toshiba

    发明人： Yosuke KAJIWARA ,  Kentaro IKEDA ,  Hisashi SAITO ,  Masahiko KURAGUCHI

    IPC分类号： H01L29/417 ,  H01L23/535 ,  H01L29/423 ,  H01L29/778

    CPC分类号： H01L29/4175 ,  H01L23/481 ,  H01L23/4824 ,  H01L23/535 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

    摘要： A semiconductor device according to an embodiment includes: a substrate having a first plane and a second plane provided on the opposite side of the first plane; a first nitride semiconductor layer provided on the first plane; source electrodes provided on the first nitride semiconductor layer; drain electrodes provided on the first nitride semiconductor layer, each of the drain electrodes provided between the source electrodes; gate electrodes provided on the first nitride semiconductor layer, each of the gate electrodes provided between each of the source electrodes and each of the drain electrodes; a first wire provided on the second plane and electrically connected to the source electrodes; a second wire electrically connected to the drain electrodes; a third wire provided on the second plane and electrically connected to the gate electrodes; and an insulating interlayer provided between the first nitride semiconductor layer and the second wire.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20160225886A1

    公开(公告)日：2016-08-04

    申请号：US14993133

    申请日：2016-01-12

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hisashi SAITO ,  Miki YUMOTO

    IPC分类号： H01L29/778 ,  H01L29/51 ,  H01L29/20 ,  H01L29/66

    摘要： A semiconductor device according to an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a wider band gap than the first GaN-based semiconductor layer, a source electrode electrically connected to the second GaN-based semiconductor layer, a drain electrode electrically connected to the second GaN-based semiconductor layer, a gate electrode provided between the source electrode and the drain electrode, and a passivation film provided on the second GaN-based semiconductor layer between the source electrode and the gate electrode and between the gate electrode and the drain electrode, the passivation film including a first insulating film and a second insulating film, the first insulating film including nitrogen, the first insulating film having a thickness equal to or greater than 0.2 nm and less than 2 nm, the second insulating film including oxygen and provided on the first insulating film.

    摘要翻译： 根据实施例的半导体器件包括第一GaN基半导体层，设置在第一GaN基半导体层上并且具有比第一GaN基半导体层更宽的带隙的第二GaN基半导体层，源电极 电连接到第二GaN基半导体层，电连接到第二GaN基半导体层的漏电极，设置在源电极和漏电极之间的栅极，以及设置在第二GaN基半导体上的钝化膜 所述钝化膜包括第一绝缘膜和第二绝缘膜，所述第一绝缘膜包括氮，所述第一绝缘膜的厚度等于或等于或小于所述栅极电极和所述漏电极之间的厚度， 大于0.2nm且小于2nm，所述第二绝缘膜包括氧并且设置在第一绝缘膜上 制作电影。

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150076508A1

    公开(公告)日：2015-03-19

    申请号：US14444256

    申请日：2014-07-28

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hisashi SAITO ,  Masahiko KURAGUCHI ,  Hitoshi SUGIYAMA

    IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/20

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/4236 ,  H01L29/7783

    摘要： A semiconductor device according to an embodiment includes a first semiconductor layer of a first GaN based semiconductor, a second semiconductor layer of a second GaN based semiconductor having a band gap narrower than the first GaN based semiconductor, a third semiconductor layer of a third GaN based semiconductor having a band gap wider than the second GaN based semiconductor, a fourth semiconductor layer of a fourth GaN based semiconductor having a band gap narrower than the third GaN based semiconductor, a fifth semiconductor layer of a fifth GaN based semiconductor having a band gap wider than the fourth GaN based semiconductor, a gate dielectric provided directly on the third semiconductor layer, the fourth semiconductor layer, and the fifth semiconductor layer, a gate electrode provided on the gate dielectric, a source and drain electrodes provided above the fifth semiconductor layer.

    摘要翻译： 根据实施例的半导体器件包括第一GaN基半导体的第一半导体层，具有窄于第一GaN基半导体的带隙的第二GaN基半导体的第二半导体层，第三GaN基半导体的第三半导体层 具有比第二GaN基半导体宽的带隙的半导体，具有窄于第三GaN基半导体的带隙的第四GaN基半导体的第四半导体层，具有带隙更宽的第五GaN基半导体的第五半导体层 比第四GaN基半导体，直接设置在第三半导体层，第四半导体层和第五半导体层上的栅极电介质，设置在栅极电介质上的栅电极，设置在第五半导体层上方的源极和漏极。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150069469A1

    公开(公告)日：2015-03-12

    申请号：US14463998

    申请日：2014-08-20

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hisashi SAITO

    IPC分类号： H01L29/20 ,  H01L29/778 ,  H01L29/423 ,  H01L29/205

    CPC分类号： H01L29/2003 ,  H01L27/0605 ,  H01L29/402 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7786

    摘要： According to one embodiment, a semiconductor device includes a nitride semiconductor layer, a first electrode provided on the layer, a second electrode provided on the layer, a insulating film provided on the layer, a first control electrode provided on the film, and a conductor provided on the film. The first control electrode includes a first edge, and a second edge. The first edge is provided between the second edge and the first electrode. The conductor includes a first portion and a third edge positioned between the first portion and the first electrode. An electric field strength at a first region is substantially equal to an electric field strength at a second region. The first region overlaps the first edge when projected onto a plane perpendicular to a stacking direction. The second region overlaps the third edge when projected onto the plane.

    摘要翻译： 根据一个实施例，半导体器件包括氮化物半导体层，设置在该层上的第一电极，设置在该层上的第二电极，设置在该层上的绝缘膜，设置在该膜上的第一控制电极和导体 提供在电影上。 第一控制电极包括第一边缘和第二边缘。 第一边缘设置在第二边缘和第一电极之间。 导体包括位于第一部分和第一电极之间的第一部分和第三边缘。 第一区域的电场强度基本上等于第二区域的电场强度。 当投影到垂直于层叠方向的平面上时，第一区域与第一边缘重叠。 当投影到平面上时，第二区域与第三边缘重叠。