发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US14444256申请日： 2014-07-28
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公开(公告)号： US20150076508A1公开(公告)日： 2015-03-19
- 发明人: Hisashi SAITO , Masahiko KURAGUCHI , Hitoshi SUGIYAMA
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2013-192416 20130917
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/205 ; H01L29/20
摘要：
A semiconductor device according to an embodiment includes a first semiconductor layer of a first GaN based semiconductor, a second semiconductor layer of a second GaN based semiconductor having a band gap narrower than the first GaN based semiconductor, a third semiconductor layer of a third GaN based semiconductor having a band gap wider than the second GaN based semiconductor, a fourth semiconductor layer of a fourth GaN based semiconductor having a band gap narrower than the third GaN based semiconductor, a fifth semiconductor layer of a fifth GaN based semiconductor having a band gap wider than the fourth GaN based semiconductor, a gate dielectric provided directly on the third semiconductor layer, the fourth semiconductor layer, and the fifth semiconductor layer, a gate electrode provided on the gate dielectric, a source and drain electrodes provided above the fifth semiconductor layer.
公开/授权文献
- US09190508B2 GaN based semiconductor device 公开/授权日：2015-11-17
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