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    SWITCH DEVICE
    1.
    发明申请
    SWITCH DEVICE 有权

    公开(公告)号：US20220165532A1

    公开(公告)日：2022-05-26

    申请号：US17409026

    申请日：2021-08-23

    申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

    发明人： Hisao MIYAZAKI ,  Hisashi YOSHIDA ,  Shigeya KIMURA

    IPC分类号： H01J17/10 ,  H01J17/20

    摘要： According to one embodiment, a switch device includes a container configured to house a gas, a cathode located in the container, a first anode located in the container, and a second anode located in the container. A second direction from the cathode toward the second anode crosses a first direction from the cathode toward the first anode. A second distance between the cathode and the second anode is greater than a first distance between the cathode and the first anode.

    ELECTRON-EMITTING ELEMENT
    2.
    发明申请
    ELECTRON-EMITTING ELEMENT 有权

    公开(公告)号：US20210142973A1

    公开(公告)日：2021-05-13

    申请号：US17015561

    申请日：2020-09-09

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Shigeya KIMURA ,  Hisashi YOSHIDA

    IPC分类号： H01J1/34 ,  C01B32/25

    摘要： According to one embodiment, an electron-emitting element includes a first member and a second member. The first member includes a semiconductor member of an n-type. The second member includes a diamond member a p-type and includes at least one selected from the group consisting of diamond and graphite. The semiconductor member includes at least one selected from the group consisting of a first material, a second material, and a third material. The first material includes nitrogen and at least one selected from the group consisting of B, Al, In, and Ga. The second material includes at least one selected from the group consisting of ZnO and ZnMgO. The third material includes at least one selected from the group consisting of BaTiO3, PbTiO3, Pb(Zrx, Ti1-x)O3, KNbO3, LiNbO3, LiTaO3, NaxWO3, Zn2O3, Ba2NaNb5O5, Pb2KNb5O15, and Li2B4O7.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20150076448A1

    公开(公告)日：2015-03-19

    申请号：US14447876

    申请日：2014-07-31

    申请人： Kabushiki Kaisha Toshiba

    发明人： Shigeya KIMURA ,  Shinya NUNOUE

    IPC分类号： H01L33/32 ,  H01L33/12 ,  H01L33/06

    CPC分类号： H01L33/025 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/7783 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/382

    摘要： According to one embodiment, a semiconductor light emitting device includes first and second semiconductor layers, and a light emitting unit. The light emitting unit is provided between the first and second semiconductor layers and includes well layers and barrier layers. The barrier layers include p-side and n-side barrier layers, and a first intermediate barrier layer. The n-side barrier layer is provided between the p-side barrier layer and the first semiconductor layer. The first intermediate barrier layer is provided between the barrier layers. The well layers include p-side and n-side well layers, and a first intermediate well layer. The p-side well layer is provided between the p-side barrier layer and the second semiconductor layer. The n-side well layer is provided between the n-side barrier layer and the first intermediate barrier layer. The first intermediate well layer is provided between the first intermediate barrier layer and the p-side barrier layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二半导体层以及发光单元。 发光单元设置在第一和第二半导体层之间，并且包括阱层和阻挡层。 阻挡层包括p侧和n侧阻挡层，以及第一中间阻挡层。 n侧阻挡层设置在p侧阻挡层和第一半导体层之间。 第一中间阻挡层设置在阻挡层之间。 阱层包括p侧和n侧阱层，以及第一中间阱层。 p侧阱层设置在p侧阻挡层和第二半导体层之间。 n侧阱层设置在n侧阻挡层和第一中间阻挡层之间。 第一中间阱层设置在第一中间阻挡层和p侧阻挡层之间。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光元件及其制造方法

    公开(公告)号：US20140252382A1

    公开(公告)日：2014-09-11

    申请号：US14176272

    申请日：2014-02-10

    申请人： Kabushiki Kaisha Toshiba

    发明人： Rei HASHIMOTO ,  Shigeya KIMURA ,  Jongil HWANG ,  Hiroshi KATSUNO ,  Shinji SAITO ,  Shinya NUNOUE

    IPC分类号： H01L33/50 ,  H01L33/60

    CPC分类号： H01L33/504 ,  H01L25/0756 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.

    摘要翻译： 根据一个实施例，半导体发光元件包括光反射层，第一第二，第三和第四半导体层，第一和第二发光层以及第一透光层。 第二半导体层设置在第一半导体层和光反射层之间。 第一发光层设置在第一和第二半导体层之间。 第一透光层设置在第二半导体层和光反射层之间。 第三半导体层设置在第一透光层和光反射层之间。 第四半导体层设置在第三半导体层和光反射层之间。 第二发光层设置在第三和第四半导体层之间。 光反射层与从第三和第四半导体层中选择的一个电连接。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20130248921A1

    公开(公告)日：2013-09-26

    申请号：US13893012

    申请日：2013-05-13

    申请人： Kabushiki Kaisha Toshiba

    发明人： Shigeya KIMURA ,  Taisuke SATO ,  Toshihide ITO ,  Toshiyuki OKA ,  Shinya NUNOUE

    IPC分类号： H01L33/36

    CPC分类号： H01L33/36 ,  H01L33/38

    摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.

    摘要翻译： 根据一个实施例，半导体发光器件包括层叠结构体，第一电极和第二电极。 层叠结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和发光部分。 层叠结构体在第二半导体层的一侧具有第一主表面。 第一电极设置在第一半导体上。 第二电极设置在第二半导体层上。 第一电极包括第一焊盘部分和从第一焊盘部分沿着第一延伸方向延伸的第一延伸部分。 第一延伸部分包括第一宽度增加部分。 第一宽度增加部分沿着与第一延伸方向正交的方向的宽度从第一焊盘部分朝向第一延伸部分的端部增加。

    POWER GENERATION ELEMENT
    9.
    发明申请
    POWER GENERATION ELEMENT 有权

    公开(公告)号：US20210384328A1

    公开(公告)日：2021-12-09

    申请号：US17142298

    申请日：2021-01-06

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Hisashi YOSHIDA ,  Hisao MIYAZAKI ,  Shigeya KIMURA

    IPC分类号： H01L29/73 ,  H01L29/16 ,  H01L29/20 ,  H01L27/06

    摘要： According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, and a first member. The first member is provided between the first conductive layer and the second conductive layer. The first member includes a first semiconductor having polarity. A gap is between the second conductive layer and the first member. A direction of the first semiconductor is oblique to a first direction from the first conductive layer toward the second conductive layer.