发明申请
- 专利标题： SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER
- 专利标题（中）： 半导体发光器件，氮化物半导体器件和制造氮化物半导体层的方法
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申请号： US14326065申请日： 2014-07-08
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公开(公告)号： US20140319457A1公开(公告)日： 2014-10-30
- 发明人: Jongil HWANG , Tomonari SHIODA , Hung HUNG , Naoharu SUGIYAMA , Shinya NUNOUE
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-109783 20110516
- 主分类号： H01L33/32
- IPC分类号： H01L33/32 ; H01L33/06 ; H01L33/00
摘要：
According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1-z1Inz1N (0
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