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公开(公告)号:US12021041B2
公开(公告)日:2024-06-25
申请号:US17509887
申请日:2021-10-25
申请人: Invensas LLC
发明人: Patrick Variot , Hong Shen
IPC分类号: H01L23/52 , H01L23/31 , H01L23/522 , H01L23/552
CPC分类号: H01L23/552 , H01L23/31 , H01L23/5226
摘要: A microelectronic device may include a substrate, a first chip on the substrate, and a second chip on the substrate. A plurality of pillars may be located between the first chip and the second chip, wherein a first end of each pillar of the plurality of pillars is adjacent to the substrate. A spacing among the plurality of pillars is at least equal to a distance sufficient to block electromagnetic interference (EMI) and/or radio frequency interference (RFI) between the first chip and the second chip. The microelectronic device may also include a cover over at least the first chip, the second chip, and the plurality of pillars, wherein a second end of each pillar of the plurality of pillars is at least adjacent to a trench defined within the cover. The trench may include a conductive material therein.
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公开(公告)号:US12040284B2
公开(公告)日:2024-07-16
申请号:US17525559
申请日:2021-11-12
申请人: Invensas LLC
发明人: Patrick Variot , Hong Shen
IPC分类号: H01L23/552 , H01L21/56 , H01L25/065 , H01Q1/38
CPC分类号: H01L23/552 , H01L21/56 , H01L25/0655 , H01Q1/38
摘要: A method of manufacturing a microelectronic package with an integrally formed electromagnetic interference (“EMI”) shield and/or antenna is disclosed. The method comprises patterning a conductive structure to comprise a base, a plurality of interconnection elements, and a die attach area sized to receive a microelectronic element; bonding ends of the plurality of interconnection elements to a carrier; encapsulating the plurality of interconnection elements, and the microelectronic element with an encapsulant; removing the carrier to expose free ends of the plurality of interconnection elements; patterning the exposed outer surface of the conductive structure overlying the microelectronic element to form a portion of the EMI shield structure and/or an antenna. The portion of the EMI shield structure and/or antenna can be patterned to extend continuously from one or more of the plurality of interconnection elements.
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公开(公告)号:US20240312928A1
公开(公告)日:2024-09-19
申请号:US18673099
申请日:2024-05-23
申请人: Invensas LLC
发明人: Patrick Variot , Hong Shen
IPC分类号: H01L23/552 , H01L23/31 , H01L23/522
CPC分类号: H01L23/552 , H01L23/31 , H01L23/5226
摘要: A microelectronic device may include a substrate, a first chip on the substrate, and a second chip on the substrate. A plurality of pillars may be located between the first chip and the second chip, wherein a first end of each pillar of the plurality of pillars is adjacent to the substrate. A spacing among the plurality of pillars is at least equal to a distance sufficient to block electromagnetic interference (EMI) and/or radio frequency interference (RFI) between the first chip and the second chip. The microelectronic device may also include a cover over at least the first chip, the second chip, and the plurality of pillars, wherein a second end of each pillar of the plurality of pillars is at least adjacent to a trench defined within the cover. The trench may include a conductive material therein.
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公开(公告)号:US20230154862A1
公开(公告)日:2023-05-18
申请号:US17525559
申请日:2021-11-12
申请人: Invensas LLC
发明人: Patrick Variot , Hong Shen
IPC分类号: H01L23/552 , H01Q1/38 , H01L25/065 , H01L21/56
CPC分类号: H01L23/552 , H01Q1/38 , H01L25/0655 , H01L21/56
摘要: A method of manufacturing a microelectronic package with an integrally formed electromagnetic interference (“EMI”) shield and/or antenna is disclosed. The method comprises patterning a conductive structure to comprise a base, a plurality of interconnection elements, and a die attach area sized to receive a microelectronic element; bonding ends of the plurality of interconnection elements to a carrier; encapsulating the plurality of interconnection elements, and the microelectronic element with an encapsulant; removing the carrier to expose free ends of the plurality of interconnection elements; patterning the exposed outer surface of the conductive structure overlying the microelectronic element to form a portion of the EMI shield structure and/or an antenna. The portion of the EMI shield structure and/or antenna can be patterned to extend continuously from one or more of the plurality of interconnection elements.
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公开(公告)号:US20230130259A1
公开(公告)日:2023-04-27
申请号:US18048378
申请日:2022-10-20
申请人: INVENSAS LLC
发明人: Belgacem Haba , Hong Shen , Patrick Variot , Rajesh Katkar
IPC分类号: H01Q9/04 , H01Q1/52 , H01Q1/48 , H01L23/552 , H01L23/00 , H01L23/498 , H01L23/31
摘要: An integrated device package is disclosed. The integrated device package can include an antenna structure and an integrated device die electrically coupled to the antenna structure. The antenna structure can be formed with a system board or separated from the system board. When the antenna structure is formed with the system board, the integrated device package can include a redistribution layer having conductive routing traces such that the integrated device die is disposed between the system board and the redistribution layer, and the integrated device die is electrically coupled to the antenna structure at least partially through one or more of the conductive routing traces of the redistribution layer. When the antenna structure is separated from the system board, the integrated device die can be positioned between the antenna structure and the system board, and the integrated device die can be electrically coupled to the antenna structure at least partially through one or more of conductive routing traces of the system board and conductive wire of an interconnect structure between the system board and the antenna structure.
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公开(公告)号:US20240339418A1
公开(公告)日:2024-10-10
申请号:US18747182
申请日:2024-06-18
申请人: Invensas LLC
发明人: Patrick Variot , Hong Shen
IPC分类号: H01L23/552 , H01L21/56 , H01L25/065 , H01Q1/38
CPC分类号: H01L23/552 , H01L21/56 , H01L25/0655 , H01Q1/38
摘要: A method of manufacturing a microelectronic package with an integrally formed electromagnetic interference (“EMI”) shield and/or antenna is disclosed. The method comprises patterning a conductive structure to comprise a base, a plurality of interconnection elements, and a die attach area sized to receive a microelectronic element; bonding ends of the plurality of interconnection elements to a carrier; encapsulating the plurality of interconnection elements, and the microelectronic element with an encapsulant; removing the carrier to expose free ends of the plurality of interconnection elements; patterning the exposed outer surface of the conductive structure overlying the microelectronic element to form a portion of the EMI shield structure and/or an antenna. The portion of the EMI shield structure and/or antenna can be patterned to extend continuously from one or more of the plurality of interconnection elements.
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公开(公告)号:US11929337B2
公开(公告)日:2024-03-12
申请号:US17340469
申请日:2021-06-07
申请人: Invensas LLC
发明人: Chok J. Chia , Qwai H. Low , Patrick Variot
IPC分类号: H01L21/52 , H01L21/56 , H01L23/00 , H01L23/538 , H01L25/065 , H01L23/31 , H01L23/498 , H01L25/10
CPC分类号: H01L24/09 , H01L21/52 , H01L21/568 , H01L23/5386 , H01L23/5389 , H01L24/17 , H01L24/19 , H01L24/20 , H01L24/81 , H01L25/0652 , H01L23/3128 , H01L23/49816 , H01L25/105 , H01L2224/02331 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/16235 , H01L2224/27002 , H01L2224/32245 , H01L2224/73267 , H01L2224/83191 , H01L2224/92244 , H01L2224/96 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/351
摘要: A microelectronic assembly comprises a microelectronic element, a redistribution structure, a plurality of backside conductive components and an encapsulant. The redistribution structure may be configured to conductively connect bond pads of the microelectronic element with terminals of the microelectronic assembly. The plurality of back side conductive components may be etched monolithic structures and further comprise a back side routing layer and an interconnection element integrally formed with the back side routing layer and extending in a direction away from the back side routing layer. The back side routing layer of at least one of the plurality of back side conductive components overlies the rear surface of the microelectronic element. An encapsulant may be disposed between each interconnection element. The back side routing layer of the at least one of the plurality of back side conductive components extends along one of the opposed interconnection surfaces.
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