发明授权
- 专利标题: 3D-interconnect with electromagnetic interference (“EMI”) shield and/or antenna
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申请号: US17525559申请日: 2021-11-12
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公开(公告)号: US12040284B2公开(公告)日: 2024-07-16
- 发明人: Patrick Variot , Hong Shen
- 申请人: Invensas LLC
- 申请人地址: US CA San Jose
- 专利权人: Invensas LLC
- 当前专利权人: Invensas LLC
- 当前专利权人地址: US CA San Jose
- 代理机构: Haley Guiliano LLP
- 主分类号: H01L23/552
- IPC分类号: H01L23/552 ; H01L21/56 ; H01L25/065 ; H01Q1/38
摘要:
A method of manufacturing a microelectronic package with an integrally formed electromagnetic interference (“EMI”) shield and/or antenna is disclosed. The method comprises patterning a conductive structure to comprise a base, a plurality of interconnection elements, and a die attach area sized to receive a microelectronic element; bonding ends of the plurality of interconnection elements to a carrier; encapsulating the plurality of interconnection elements, and the microelectronic element with an encapsulant; removing the carrier to expose free ends of the plurality of interconnection elements; patterning the exposed outer surface of the conductive structure overlying the microelectronic element to form a portion of the EMI shield structure and/or an antenna. The portion of the EMI shield structure and/or antenna can be patterned to extend continuously from one or more of the plurality of interconnection elements.
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