公开(公告)号：US10964750B2

公开(公告)日：2021-03-30

申请号：US15894108

申请日：2018-02-12

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  Nicolas Loubet ,  Ruilong Xie ,  Daniel Chanemougame ,  Ali Razavieh ,  Kangguo Cheng

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L29/78 ,  H01L21/3213

摘要： Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, and a trench extending to the source/drain. A trench contact is formed in the trench in contact with the source/drain. A recess is formed in a portion of the trench contact below a top surface of the cap using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the trench contact. A source/drain contact is formed upon the BRS material, a portion of the trench contact, the BRS material, and a portion of the source/drain contact forming a reversible switch.

公开(公告)号：US20210111225A1

公开(公告)日：2021-04-15

申请号：US17128786

申请日：2020-12-21

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  NICOLAS LOUBET ,  Ruilong Xie ,  Daniel Chanemougame ,  Ali Razavieh ,  Kangguo Cheng

IPC分类号： H01L27/24 ,  H01L45/00

摘要： Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, and a trench extending to the source/drain. A trench contact is formed in the trench in contact with the source/drain. A recess is formed in a portion of the trench contact below a top surface of the cap using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the trench contact. A source/drain contact is formed upon the BRS material, a portion of the trench contact, the BRS material, and a portion of the source/drain contact forming a reversible switch.

公开(公告)号：US20190252508A1

公开(公告)日：2019-08-15

申请号：US16373242

申请日：2019-04-02

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  Nicolas Loubet ,  Ruilong Xie ,  Daniel Chanemougame ,  Ali Razavieh ,  Kangguo Cheng

IPC分类号： H01L29/43 ,  H01L49/00 ,  H01L21/3105 ,  H01L29/78 ,  H01L21/3213 ,  H01L23/525

CPC分类号： H01L29/435 ,  H01L21/31053 ,  H01L21/32139 ,  H01L23/525 ,  H01L27/228 ,  H01L27/2454 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785 ,  H01L49/003 ,  H04L67/10

摘要： Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, a trench contact formed on and in contact with the source/drain, and a source/drain contact formed on an in contact with the trench contact. A recess is formed in a portion of the source/drain contact using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the source/drain contact. A metallization layer is formed in contact upon the BRS material, a portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forming a reversible switch.

公开(公告)号：US20190252507A1

公开(公告)日：2019-08-15

申请号：US15894218

申请日：2018-02-12

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  Nicolas Loubet ,  Ruilong Xie ,  Daniel Chanemougame ,  Ali Razavieh ,  Kangguo Cheng

IPC分类号： H01L29/43 ,  H01L29/78 ,  H01L23/525 ,  H01L49/00 ,  H01L21/3105

CPC分类号： H01L29/435 ,  H01L21/31053 ,  H01L23/525 ,  H01L29/785 ,  H01L49/003 ,  H04L67/10

摘要： Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a plurality of source/drains disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, and a plurality of trenches, each trench extending to a corresponding one of the plurality of source/drains. A trench contact is formed in each of the trenches in contact with the corresponding source/drain. A recess is formed in a portion of each trench contact below a top surface of the cap. A bi-stable resistive system (BRS) material is deposited in each recess in contact with the portion of the trench contact. A source/drain contact is formed upon the BRS material, a portion of the trench contact, the BRS material, and a portion of the source/drain contact forming a reversible switch for each of the corresponding source/drains.

公开(公告)号：US10256316B1

公开(公告)日：2019-04-09

申请号：US15894162

申请日：2018-02-12

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  Nicolas Loubet ,  Ruilong Xie ,  Daniel Chanemougame ,  Ali Razavieh ,  Kangguo Cheng

IPC分类号： H01L27/11 ,  H01L29/43 ,  H01L29/78 ,  H01L23/525 ,  H01L21/3213 ,  H01L21/3105 ,  H01L49/00 ,  H04L29/08

摘要： Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, a trench contact formed on and in contact with the source/drain, and a source/drain contact formed on an in contact with the trench contact. A recess is formed in a portion of the source/drain contact using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the source/drain contact. A metallization layer is formed in contact upon the BRS material, a portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forming a reversible switch.

公开(公告)号：US11605672B2

公开(公告)日：2023-03-14

申请号：US17128786

申请日：2020-12-21

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  Nicolas Loubet ,  Ruilong Xie ,  Daniel Chanemougame ,  Ali Razavieh ,  Kangguo Cheng

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L29/78 ,  H01L21/3213

摘要： Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, and a trench extending to the source/drain. A trench contact is formed in the trench in contact with the source/drain. A recess is formed in a portion of the trench contact below a top surface of the cap using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the trench contact. A source/drain contact is formed upon the BRS material, a portion of the trench contact, the BRS material, and a portion of the source/drain contact forming a reversible switch.

公开(公告)号：US10991808B2

公开(公告)日：2021-04-27

申请号：US16733846

申请日：2020-01-03

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  Nicolas Loubet ,  Ruilong Xie ,  Daniel Chanemougame ,  Ali Razavieh ,  Kangguo Cheng

IPC分类号： H01L23/525 ,  H01L29/43 ,  H01L29/78 ,  H01L21/3213 ,  H01L21/3105 ,  H01L49/00 ,  H01L29/417 ,  H01L29/66 ,  H04L29/08 ,  H01L27/24 ,  H01L27/22

摘要： Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, a trench contact formed on and in contact with the source/drain, and a source/drain contact formed on an in contact with the trench contact. A recess is formed in a portion of the source/drain contact using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the source/drain contact. A metallization layer is formed in contact upon the BRS material, a portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forming a reversible switch.

公开(公告)号：US10566436B2

公开(公告)日：2020-02-18

申请号：US16373242

申请日：2019-04-02

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  Nicolas Loubet ,  Ruilong Xie ,  Daniel Chanemougame ,  Ali Razavieh ,  Kangguo Cheng

IPC分类号： H01L29/43 ,  H01L23/525 ,  H01L29/78 ,  H01L21/3213 ,  H01L21/3105 ,  H01L49/00 ,  H04L29/08

摘要： Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, a trench contact formed on and in contact with the source/drain, and a source/drain contact formed on an in contact with the trench contact. A recess is formed in a portion of the source/drain contact using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the source/drain contact. A metallization layer is formed in contact upon the BRS material, a portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forming a reversible switch.

公开(公告)号：US20190252465A1

公开(公告)日：2019-08-15

申请号：US15894108

申请日：2018-02-12

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  Nicolas Loubet ,  Ruilong Xie ,  Daniel Chanemougame ,  Ali Razavieh ,  Kangguo Cheng

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L27/2436 ,  H01L21/32139 ,  H01L29/785 ,  H01L45/1683

摘要： Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, and a trench extending to the source/drain. A trench contact is formed in the trench in contact with the source/drain. A recess is formed in a portion of the trench contact below a top surface of the cap using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the trench contact. A source/drain contact is formed upon the BRS material, a portion of the trench contact, the BRS material, and a portion of the source/drain contact forming a reversible switch.

公开(公告)号：US10170520B1

公开(公告)日：2019-01-01

申请号：US15894128

申请日：2018-02-12

申请人： International Business Machines Corporation

发明人： Julien Frougier ,  Nicolas Loubet ,  Ruilong Xie ,  Daniel Chanemougame ,  Ali Razavieh ,  Kangguo Cheng

IPC分类号： H01L29/02 ,  H01L27/24 ,  H01L29/06 ,  H01L23/535 ,  H01L29/78 ,  H01L45/00 ,  H01L29/66 ,  H01L21/768 ,  H01L21/28

摘要： Fabricating a negative capacitance steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin, a source/drain, a gate, a cap disposed upon the gate, a trench contact disposed upon the source/drain, and an inter-layer dielectric. A source/drain recess is formed in the inter-layer dielectric extending to the trench contact, and a gate recess is formed in the inter-layer dielectric extending to the gate. A ferroelectric material is deposited within the gate recess, and a source/drain contact is formed within the source/drain recess. A gate contact is formed within the gate recess, and a contact recess is formed in a portion of the source/drain contact. A bi-stable resistive system (BRS) material is formed in the contact recess, and a metallization layer contact is formed upon the BRS material. A portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forms a reversible switch.