公开(公告)号：US09368631B2

公开(公告)日：2016-06-14

申请号：US14478148

申请日：2014-09-05

申请人： InnoLux Corporation

发明人： Hsin-Hung Lin ,  Jung-Fang Chang ,  Ker-Yih Kao

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L23/31 ,  H01L23/48 ,  H01L29/417 ,  H01L29/51 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/4757

CPC分类号： H01L27/1225 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/47573 ,  H01L23/3171 ,  H01L23/481 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

公开(公告)号：US09362408B2

公开(公告)日：2016-06-07

申请号：US14478172

申请日：2014-09-05

申请人： InnoLux Corporation

发明人： Hsin-Hung Lin ,  Jung-Fang Chang ,  Ker-Yih Kao

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L23/31 ,  H01L23/48 ,  H01L29/417 ,  H01L29/51 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/4757

CPC分类号： H01L27/1225 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/47573 ,  H01L23/3171 ,  H01L23/481 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

摘要翻译： 公开了一种在基板上包括栅电极的薄膜晶体管。 栅极电介质层设置在栅电极和衬底上，源极/漏电极设置在覆盖栅电极的两个边缘部分的栅极电介质层上。 沟道层设置在覆盖栅极电极的中心部分的栅极电介质层上，沟道区域与源极/漏极接触。 绝缘覆盖层覆盖在沟道层上，其中沟道层包括氧化物半导体。

公开(公告)号：US09401375B2

公开(公告)日：2016-07-26

申请号：US14750674

申请日：2015-06-25

申请人： InnoLux Corporation

发明人： Kuan-Feng Lee ,  Jung-Fang Chang

IPC分类号： H01L51/52 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1248 ,  G02F1/1339 ,  G02F2001/133388 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/78606 ,  H01L29/7869 ,  H01L51/5237 ,  H01L51/5246

摘要： A display panel and a display are disclosed. A display panel has an active area and a peripheral area disposed adjacent to the active area and comprises a first substrate, a second substrate, a first insulating layer, a second insulating layer and an organic layer. The second substrate is disposed opposite the first substrate. The first insulating layer is disposed on the side of the first substrate facing the second substrate. The organic layer covers the first insulating layer. The second insulating layer covers the organic layer and includes at least a first opening which is disposed in the peripheral area and exposes the organic layer.

摘要翻译： 公开了显示面板和显示器。 显示面板具有与有源区域相邻设置的有源区域和周边区域，并且包括第一衬底，第二衬底，第一绝缘层，第二绝缘层和有机层。 第二基板与第一基板相对设置。 第一绝缘层设置在第一基板的面向第二基板的一侧。 有机层覆盖第一绝缘层。 第二绝缘层覆盖有机层，并且至少包括设置在周边区域中并露出有机层的第一开口。

公开(公告)号：US09741804B2

公开(公告)日：2017-08-22

申请号：US14935808

申请日：2015-11-09

申请人： InnoLux Corporation

发明人： Jung-Fang Chang ,  I-Ho Shen

IPC分类号： H01L29/10 ,  H01L29/417 ,  H01L29/786

CPC分类号： H01L29/41733 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A thin film transistor (TFT) substrate includes a substrate and a TFT. The TFT is disposed on the substrate and comprises a gate, a gate dielectric layer, a film, a source and a drain. The gate is disposed on the substrate. The gate dielectric layer is disposed on the gate and the substrate. The film is disposed above the gate dielectric layer, and the source and the drain are disposed on the film and contacts with the film respectively. Wherein, there is an interval between the source and the drain, and the film corresponding to the interval has an arc concave portion. In addition, a display panel is also disclosed.

公开(公告)号：US09684214B2

公开(公告)日：2017-06-20

申请号：US14669557

申请日：2015-03-26

申请人： InnoLux Corporation

发明人： Jung-Fang Chang ,  Chih-Hao Wu ,  Chao-Hsiang Wang ,  Yi-Ching Chen

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L29/417 ,  H01L23/538 ,  H01L27/112 ,  H01L29/423 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1345 ,  G02F1/1333 ,  G02F1/136

CPC分类号： H01L29/78696 ,  G02F1/13452 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133388 ,  G02F2001/13606 ,  G02F2001/136236 ,  H01L23/538 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a display device, comprising: a substrate comprising a display region and a non-display region surrounding the display region; a first conductive layer disposed on the substrate; a semiconductor layer disposed on the substrate and partially covering the first conductive layer; and a second conductive layer disposed on a top surface of the semiconductor layer; and there is a spacing between a first side of the semiconductor layer and a second side of the second conductive layer from a top view, wherein the first side of the semiconductor layer is adjacent to the second side of the second conductive layer; wherein the spacing in the display region is a first distance, the spacing in the non-display region is a second distance, and the first distance is smaller than the second distance.

公开(公告)号：US09978880B2

公开(公告)日：2018-05-22

申请号：US15585627

申请日：2017-05-03

申请人： InnoLux Corporation

发明人： Jung-Fang Chang ,  Chih-Hao Wu ,  Chao-Hsiang Wang ,  Yi-Ching Chen

IPC分类号： H01L29/786 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/417 ,  H01L23/538 ,  H01L29/423 ,  G02F1/1345 ,  G02F1/1333 ,  G02F1/136 ,  H01L27/32

CPC分类号： H01L29/78696 ,  G02F1/13452 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133388 ,  G02F2001/13606 ,  G02F2001/136236 ,  H01L23/538 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2924/0002 ,  H01L2924/00

摘要： A display device is disclosed, which includes: a substrate; a first conductive layer disposed on the substrate and including a gate with a gate edge parallel to a first direction; a semiconductor layer disposed on the first conductive layer; and a second conductive layer disposed on the semiconductor layer and including a drain and a data line extending along the first direction, the second conductive layer electrically connecting to the semiconductor layer, the drain including a drain edge parallel to the first direction, the gate edge located between the data line and the drain edge, and a projection of the drain on the substrate located in a projection of the semiconductor layer on the substrate. Herein, a maximum width of the semiconductor layer overlapping the gate edge along the first direction is smaller than maximum widths thereof overlapping the gate and the drain edge along the first direction.

公开(公告)号：US09748397B2

公开(公告)日：2017-08-29

申请号：US14873236

申请日：2015-10-02

申请人： InnoLux Corporation

发明人： I-Ho Shen ,  Jung-Fang Chang

IPC分类号： H01L29/786 ,  H01L51/05 ,  H01L27/28 ,  H01L51/00

CPC分类号： H01L29/78618 ,  H01L27/288 ,  H01L29/78621 ,  H01L29/78696 ,  H01L51/0053 ,  H01L51/0068 ,  H01L51/0558

摘要： A thin-film transistor substrate is disclosed, which comprises a base layer; a semiconductor layer disposed on the base layer; a source electrode and a drain electrode disposed on the semiconductor layer; and a gate electrode disposed on the base layer and corresponding to the semiconductor layer; wherein the semiconductor layer includes a first region, a second region, and a third region, in which the first region corresponds to the gate electrode layer, the second region corresponds to the source electrode, and the third region corresponds to the drain electrode; and wherein the first region has a first thickness, the second region has a second thickness, and the third region has a third thickness, and the first thickness is greater than the second thickness or the third thickness.

公开(公告)号：US09076872B2

公开(公告)日：2015-07-07

申请号：US14478124

申请日：2014-09-05

申请人： InnoLux Corporation

发明人： Hsin-Hung Lin ,  Jung-Fang Chang ,  Ker-Yih Kao

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L23/31 ,  H01L23/48 ,  H01L29/417 ,  H01L29/51 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/4757

CPC分类号： H01L27/1225 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/47573 ,  H01L23/3171 ,  H01L23/481 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source/drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source/drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.

摘要翻译： 公开了一种在基板上包括栅电极的薄膜晶体管。 栅极电介质层设置在栅电极和衬底上，源极/漏电极设置在覆盖栅电极的两个边缘部分的栅极电介质层上。 沟道层设置在覆盖栅极电极的中心部分的栅极电介质层上，沟道区域与源极/漏极接触。 绝缘覆盖层覆盖在沟道层上，其中沟道层包括氧化物半导体。

公开(公告)号：US09601519B2

公开(公告)日：2017-03-21

申请号：US15155325

申请日：2016-05-16

申请人： InnoLux Corporation

发明人： Hsin-Hung Lin ,  Jung-Fang Chang ,  Ker-Yih Kao

IPC分类号： H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L23/31 ,  H01L23/48 ,  H01L29/417 ,  H01L29/51 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/4757

CPC分类号： H01L27/1225 ,  H01L21/441 ,  H01L21/47 ,  H01L21/471 ,  H01L21/47573 ,  H01L23/3171 ,  H01L23/481 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin film transistor is provided, which includes a gate electrode on a substrate; a channel layer overlapping the gate electrode; a dielectric layer between the gate electrode and the channel layer; a source electrode and a drain electrode electrically connecting to the channel layer; a passivation layer overlying the source electrode, the drain electrode, and the gate dielectric layer, wherein the channel layer includes two contact portions being in contact with the source electrode and the drain electrode, respectively, and a non-contact portion located between the two contact portions, and wherein one of the two contact portions has a first thickness in a first direction perpendicular to a surface of the substrate, and the non-contact portion has a second thickness less than the first thickness in the first direction.