Active matrix image sensing panel and apparatus
    1.
    发明授权
    Active matrix image sensing panel and apparatus 有权
    主动矩阵图像感应面板及装置

    公开(公告)号:US09276025B2

    公开(公告)日:2016-03-01

    申请号:US14166357

    申请日:2014-01-28

    IPC分类号: H01L27/146 G06F1/16

    摘要: An active matrix image sensing panel comprises a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and comprises a scan line, a data line crossing the scan line, a photo sensing element and a TFT element. The photo sensing element includes a first terminal electrode and a second terminal electrode, and the voltage of the first terminal electrode is higher than that of the second terminal electrode. The TFT element includes a first electrode, a second electrode, a first gate electrode and a second gate electrode. The first electrode is electrically connected to the data line, the second electrode is electrically connected to the first terminal electrode, the first gate electrode is electrically connected to the scan line, and the second gate electrode is electrically connected to the first or second terminal electrode. An active matrix image sensing apparatus is also disclosed.

    摘要翻译: 有源矩阵图像感测面板包括基板和图像感测像素。 图像感测像素设置在基板上,并且包括扫描线,与扫描线交叉的数据线,感光元件和TFT元件。 感光元件包括第一端子电极和第二端子电极,并且第一端子电极的电压高于第二端子电极的电压。 TFT元件包括第一电极,第二电极,第一栅电极和第二栅电极。 第一电极与数据线电连接,第二电极与第一端子电极电连接,第一栅电极与扫描线电连接,第二栅极电连接到第一或第二端子电极 。 还公开了一种有源矩阵图像感测装置。

    Detecting device
    2.
    发明授权

    公开(公告)号:US10707262B2

    公开(公告)日:2020-07-07

    申请号:US16109929

    申请日:2018-08-23

    发明人: Chih-Hao Wu

    摘要: A detecting device is provided. The detecting device includes a substrate, at least one transistor, at least one detecting element, and a scintillator layer. The transistor is disposed on the substrate. The detecting element is disposed on the transistor and electrically connects to the transistor. The detecting element includes a first electrode layer, a semiconductor layer, and a second electrode layer. The semiconductor layer is disposed on the first electrode layer, and the second electrode layer is disposed on the semiconductor layer. The scintillator layer is disposed on one side of the substrate, wherein at least one corner area of the scintillator layer has a curved structure or a chamfered structure.

    Active matrix image sensing panel and apparatus
    3.
    发明授权
    Active matrix image sensing panel and apparatus 有权
    主动矩阵图像感应面板及装置

    公开(公告)号:US09035405B2

    公开(公告)日:2015-05-19

    申请号:US13761738

    申请日:2013-02-07

    发明人: Chih-Hao Wu

    IPC分类号: H01L29/49 H01L27/146

    摘要: An active matrix image sensing panel includes a substrate and an image sensing pixel. The image sensing pixel is disposed on the substrate and includes a data line, a first thin film transistor (TFT) device and a second TFT device. The first TFT device includes a first electrode, a second electrode and a first gate electrode. The second electrode is coupled to the data line through a first via. The second TFT device includes a third electrode, a fourth electrode and a second gate electrode. The fourth electrode is electrically connected to the data line through a second via. The second electrode and the fourth electrode are connected with each other and overlap the data line.

    摘要翻译: 有源矩阵图像感测面板包括基板和图像感测像素。 图像感测像素设置在基板上并且包括数据线,第一薄膜晶体管(TFT)器件和第二TFT器件。 第一TFT器件包括第一电极,第二电极和第一栅电极。 第二电极通过第一通孔耦合到数据线。 第二TFT器件包括第三电极,第四电极和第二栅电极。 第四电极通过第二通孔电连接到数据线。 第二电极和第四电极彼此连接并与数据线重叠。

    Light detection device and operating method thereof

    公开(公告)号:US11022704B2

    公开(公告)日:2021-06-01

    申请号:US16520375

    申请日:2019-07-24

    发明人: Chih-Hao Wu

    IPC分类号: H01L27/144 G01T1/24

    摘要: A light detection device includes a first gate line, a second gate line adjacent to the first gate line, a first switching unit, a second switching unit, and a readout circuit. The first switching unit includes a first gate electrode connected to the first gate line, and a first drain electrode electrically connected to a light sensing unit. The second switching unit includes a second gate electrode connected to the second gate line, and a second drain electrode electrically connected to a light sensing unit. An operation method of the light detection device includes receiving a first readout signal and a second readout signal from the first switching unit and the second switching unit respectively by the readout circuit and calculating a difference between the first readout signal and the second readout signal for determining whether the light detection device is irradiated by detection light.

    Photodetecting device
    5.
    发明授权

    公开(公告)号:US10976449B2

    公开(公告)日:2021-04-13

    申请号:US16452898

    申请日:2019-06-26

    发明人: Chih-Hao Wu

    IPC分类号: G01T1/20

    摘要: A photodetecting device is provided. The photodetecting device includes an array substrate. The first scan line extends in a first direction. The first data line extends in a second direction, wherein first data line is crossed with the first scan line. The first electronic unit is electrically connected to the first scan line and the first data line. The second electronic unit is adjacent to the first electronic unit and is disposed along the first direction. The third electronic unit is adjacent to the first electronic unit and is disposed along the second direction. The common line transmits a signal to the first electronic unit, the second electronic unit and the third electronic unit. The common line is disposed between the first electronic unit and the second electronic unit, or between the first electronic unit and the third electronic unit.

    LIGHT DETECTION DEVICE AND OPERATING METHOD THEREOF

    公开(公告)号:US20200064497A1

    公开(公告)日:2020-02-27

    申请号:US16520375

    申请日:2019-07-24

    发明人: Chih-Hao Wu

    IPC分类号: G01T1/24 H01L27/144

    摘要: A light detection device includes a first gate line, a second gate line adjacent to the first gate line, a first switching unit, a second switching unit, and a readout circuit. The first switching unit includes a first gate electrode connected to the first gate line, and a first drain electrode electrically connected to a light sensing unit. The second switching unit includes a second gate electrode connected to the second gate line, and a second drain electrode electrically connected to a light sensing unit. An operation method of the light detection device includes receiving a first readout signal and a second readout signal from the first switching unit and the second switching unit respectively by the readout circuit and calculating a difference between the first readout signal and the second readout signal for determining whether the light detection device is irradiated by detection light.

    RADIATION SENSING DEVICE
    7.
    发明申请

    公开(公告)号:US20210349222A1

    公开(公告)日:2021-11-11

    申请号:US17379969

    申请日:2021-07-19

    IPC分类号: G01T1/24 H01L27/146

    摘要: A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

    Radiation sensing device and operating method thereof

    公开(公告)号:US11099284B2

    公开(公告)日:2021-08-24

    申请号:US15930452

    申请日:2020-05-13

    IPC分类号: G01T1/24 H01L27/146

    摘要: A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

    ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210125888A1

    公开(公告)日:2021-04-29

    申请号:US17074538

    申请日:2020-10-19

    IPC分类号: H01L23/31 H01L21/56

    摘要: An electronic device is provided. The electronic device includes a substrate, an active element, a first insulation layer, and a detection element. The active element is disposed on the substrate. The first insulation layer is disposed on the active element. The detection element is disposed on the first insulation layer. The detection element comprises a lower electrode, an active layer and an upper electrode, and the lower electrode is a part of a conductive layer. The first insulation layer has a recess, and the recess does not overlap with the conductive layer in the normal direction of the substrate.

    Sensor device
    10.
    发明授权

    公开(公告)号:US10446602B2

    公开(公告)日:2019-10-15

    申请号:US15943731

    申请日:2018-04-03

    IPC分类号: H01L27/146 H01L29/786

    摘要: A sensor device is provided and includes a first transistor, a second transistor, a third transistor, and a photosensor. The first transistor has a first gate, a first drain, and a first source. The first drain is coupled to a first power line and has a concave surface, and the first source is disposed corresponding to the concave surface. The second transistor has a second source, coupled to the first gate. The third transistor has a third gate, a third drain, and a third source, the third drain is coupled to the first source, the third source is coupled to the data line, and the third gate is coupled to the readout line. The photosensor is coupled to the first gate.