公开(公告)号：US20180158920A1

公开(公告)日：2018-06-07

申请号：US15866755

申请日：2018-01-10

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Dethard Peters ,  Romain Esteve ,  Wolfgang Bergner ,  Thomas Aichinger ,  Daniel Kueck ,  Roland Rupp ,  Bernd Zippelius ,  Karlheinz Feldrapp ,  Christian Strenger

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/739 ,  H01L29/10 ,  H01L29/20 ,  H01L29/04 ,  H01L29/16

CPC classification number: H01L29/4236 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/7827

Abstract: A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 eV, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along a common longitudinal direction. A doping concentration of a first doping type is higher in the diode region than in the source region. The trench gate structure projects from a first surface of the semiconductor body into the semiconductor body. A first portion of the second sidewall at the first surface is directly adjoined by the source region. A second portion of the second sidewall is in direct contact with the diode region. Additional semiconductor device embodiments are provided.

公开(公告)号：US10211306B2

公开(公告)日：2019-02-19

申请号：US15866755

申请日：2018-01-10

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Dethard Peters ,  Romain Esteve ,  Wolfgang Bergner ,  Thomas Aichinger ,  Daniel Kueck ,  Roland Rupp ,  Bernd Zippelius ,  Karlheinz Feldrapp ,  Christian Strenger

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L29/739 ,  H01L29/04 ,  H01L29/423 ,  H01L29/40 ,  H01L29/16 ,  H01L29/20

Abstract: A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 eV, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along a common longitudinal direction. A doping concentration of a first doping type is higher in the diode region than in the source region. The trench gate structure projects from a first surface of the semiconductor body into the semiconductor body. A first portion of the second sidewall at the first surface is directly adjoined by the source region. A second portion of the second sidewall is in direct contact with the diode region. Additional semiconductor device embodiments are provided.

公开(公告)号：US20170345905A1

公开(公告)日：2017-11-30

申请号：US15162716

申请日：2016-05-24

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Dethard Peters ,  Romain Esteve ,  Wolfgang Bergner ,  Thomas Aichinger ,  Daniel Kueck ,  Roland Rupp ,  Bernd Zippelius ,  Karlheinz Feldrapp ,  Christian Strenger

IPC: H01L29/423 ,  H01L29/739 ,  H01L29/20 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L29/04

CPC classification number: H01L29/4236 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7827

Abstract: A semiconductor device includes trench gate structures extending from a first surface into a semiconductor body from a wide-bandgap semiconductor material. The trench gate structures separate mesa portions of the semiconductor body from each other. In the mesa portions, body regions form first pn junctions with a drain structure and directly adjoin first mesa sidewalls. Source regions in the mesa portions form second pn junctions with the body regions, wherein the body regions separate the source regions from the drain structure. The source regions directly adjoin the first mesa sidewalls and second mesa sidewalls opposite to the first mesa sidewalls.