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    Nonvolatile semiconductor memory device and method of fabricating the same
    1.
    发明授权
    Nonvolatile semiconductor memory device and method of fabricating the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08624316B2

    公开(公告)日：2014-01-07

    申请号：US13227882

    申请日：2011-09-08

    申请人： Ichiro Mizushima ,  Yoshiaki Fukuzumi ,  Shinji Mori

    发明人： Ichiro Mizushima ,  Yoshiaki Fukuzumi ,  Shinji Mori

    IPC分类号： H01L29/792

    CPC分类号： H01L21/28282 ,  H01L27/11582 ,  H01L29/42352

    摘要： According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body, a tunnel insulator provided on a surface of the silicon pillar facing to the stacked layer body, a charge storage layer provided on a surface of the tunnel insulator facing to the stacked layer body, a block insulator provided on a surface of the charge storage layer facing to the stacked layer body, the block insulator being in contact with the electrode film, and an embedded portion provided in the silicon pillars.

    摘要翻译： 根据一个实施例，一种半导体器件，包括衬底，在衬底上方设置的层叠体，堆叠层体彼此交替堆叠绝缘体和电极膜，含有氟的硅柱，穿透硅柱的硅柱， 设置在堆叠层体上的隧道绝缘体，设置在与层叠体主体相对的硅柱的表面上的隧道绝缘体，设置在隧道绝缘体的面向堆叠层主体的表面上的电荷存储层， 面向堆叠层体的电荷存储层的表面，块绝缘体与电极膜接触，以及设置在硅柱中的嵌入部。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US20110233646A1

    公开(公告)日：2011-09-29

    申请号：US12886135

    申请日：2010-09-20

    申请人： Ichiro MIZUSHIMA ,  Shinji Mori ,  Yoshiaki Fukuzumi ,  Fumiki Aiso

    发明人： Ichiro MIZUSHIMA ,  Shinji Mori ,  Yoshiaki Fukuzumi ,  Fumiki Aiso

    IPC分类号： H01L29/792 ,  H01L21/336

    CPC分类号： H01L29/792 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

    摘要： According to one embodiment, a nonvolatile semiconductor memory device is provided in which memory strings, which are formed by providing a plurality of transistors having gate electrode films on sides of columnar semiconductor films in a height direction of the columnar semiconductor films via charge storage layers, are substantially perpendicularly arranged in a matrix shape on a substrate. A coupling section made of a semiconductor material that connects lower portions of the columnar semiconductor films forming a pair of the memory strings adjacent to each other in a predetermined direction is provided. Each of the columnar semiconductor films is formed of a generally single-crystal-like germanium film or silicon germanium film.

    摘要翻译： 根据一个实施例，提供了一种非易失性半导体存储器件，其中通过在柱状半导体膜的高度方向上经由电荷存储层提供在柱状半导体膜的侧面上具有栅电极膜的多个晶体管形成的存储器串， 基本上垂直地以矩阵形式布置在基底上。 提供了一种由半导体材料制成的耦合部分，其连接形成在预定方向上彼此相邻的一对存储器串的柱状半导体膜的下部。 每个柱状半导体膜由大致单晶状锗膜或硅锗膜形成。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US20120241841A1

    公开(公告)日：2012-09-27

    申请号：US13227882

    申请日：2011-09-08

    申请人： Ichiro Mizushima ,  Yoshiaki Fukuzumi ,  Shinji Mori

    发明人： Ichiro Mizushima ,  Yoshiaki Fukuzumi ,  Shinji Mori

    IPC分类号： H01L29/792 ,  H01L21/28

    CPC分类号： H01L21/28282 ,  H01L27/11582 ,  H01L29/42352

    摘要： According to one embodiment, a semiconductor device, including a substrate, a stacked layer body provided above the substrate, the stacked layer body alternately stacking an insulator and an electrode film one on another, silicon pillars contained with fluorine, the silicon pillar penetrating through and provided in the stacked layer body, a tunnel insulator provided on a surface of the silicon pillar facing to the stacked layer body, a charge storage layer provided on a surface of the tunnel insulator facing to the stacked layer body, a block insulator provided on a surface of the charge storage layer facing to the stacked layer body, the block insulator being in contact with the electrode film, and an embedded portion provided in the silicon pillars.

    摘要翻译： 根据一个实施例，一种半导体器件，包括衬底，在衬底上方设置的层叠体，堆叠层体彼此交替堆叠绝缘体和电极膜，含有氟的硅柱，穿透硅柱的硅柱， 设置在堆叠层体上的隧道绝缘体，设置在与层叠体主体相对的硅柱的表面上的隧道绝缘体，设置在隧道绝缘体的面向堆叠层主体的表面上的电荷存储层， 面向堆叠层体的电荷存储层的表面，块绝缘体与电极膜接触，以及设置在硅柱中的嵌入部。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体存储器件及其制造方法

    公开(公告)号：US20120181602A1

    公开(公告)日：2012-07-19

    申请号：US13346888

    申请日：2012-01-10

    申请人： Yoshiaki Fukuzumi ,  Hideaki Aochi ,  Masaru Kito ,  Kiyotaka Miyano ,  Shinji Mori ,  Ichiro Mizushima

    发明人： Yoshiaki Fukuzumi ,  Hideaki Aochi ,  Masaru Kito ,  Kiyotaka Miyano ,  Shinji Mori ,  Ichiro Mizushima

    IPC分类号： H01L27/105 ,  H01L21/8239

    CPC分类号： H01L27/11582 ,  H01L27/0688 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/1207

    摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion.The circuit portion is formed on the semiconductor layer. The Ge concentration in the lower portion of the semiconductor layer is higher than that in the upper portion of the semiconductor layer.

    摘要翻译： 根据一个实施例，半导体存储器件包括半导体衬底，存储单元阵列部分，单晶半导体层和电路部分。 存储单元阵列部分形成在半导体衬底上，并且包括存储单元。 半导体层形成在存储单元阵列部分上，并且通过形成在延伸穿过存储单元阵列部分的孔中而连接到半导体衬底。 电路部分形成在半导体层上。 半导体层的下部的Ge浓度高于半导体层的上部的Ge浓度。

    Non-volatile semiconductor storage device
    8.
    发明授权
    Non-volatile semiconductor storage device 有权
    非易失性半导体存储器件

    公开(公告)号：US08957501B2

    公开(公告)日：2015-02-17

    申请号：US13671077

    申请日：2012-11-07

    申请人： Takeshi Hioka ,  Yoshiaki Fukuzumi

    发明人： Takeshi Hioka ,  Yoshiaki Fukuzumi

    IPC分类号： H01L27/06 ,  H01L27/115 ,  H01L49/02

    CPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L28/88

    摘要： A non-volatile semiconductor storage device contains a memory cell region, a first electrode, and a second electrode. The memory cell region is formed on a substrate and comprises multiple memory cells stacked on the substrate as part of memory strings. Multiple first conductive layers are laminated on the substrate. The first electrode functions as an electrode at one side of a capacitive component and comprises multiple conductive layers stacked on the substrate and separated horizontally from stacked conductive layers of the second electrode which is disposed at a side of the capacitive component opposite the first electrode.

    摘要翻译： 非易失性半导体存储装置包含存储单元区域，第一电极和第二电极。 存储单元区域形成在衬底上并且包括作为存储器串的一部分堆叠在衬底上的多个存储器单元。 多个第一导电层层叠在基板上。 第一电极用作电容部件一侧的电极，并且包括层叠在基板上的多个导电层，并且与设置在与第一电极相对的电容部件侧的第二电极的层叠导电层水平分离。

    Nonvolatile semiconductor memory device including silicon germanium semiconductor layer
    9.
    发明授权
    Nonvolatile semiconductor memory device including silicon germanium semiconductor layer 有权
    包括硅锗半导体层的非易失性半导体存储器件

    公开(公告)号：US08912594B2

    公开(公告)日：2014-12-16

    申请号：US13560260

    申请日：2012-07-27

    申请人： Jun Fujiki ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

    发明人： Jun Fujiki ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

    IPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/105

    CPC分类号： H01L29/7926 ,  H01L27/11582 ,  H01L29/66833

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a stacked body, a second insulating layer, a select gate, a memory hole, a memory film, a channel body, a first semiconductor layer, and a second semiconductor layer. The select gate is provided on the second insulating layer. The memory film is provided on an inner wall of the memory hole. The channel body is provided inside the memory film. The first semiconductor layer is provided on an upper surface of the channel body. The second semiconductor layer is provided on the first semiconductor layer. The first semiconductor layer contains silicon germanium. The second semiconductor layer contains silicon germanium doped with a first impurity. A boundary between the first semiconductor layer and the second semiconductor layer is provided above a position of an upper end of the select gate.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括层叠体，第二绝缘层，选择栅极，存储器孔，存储​​膜，通道体，第一半导体层和第二半导体层。 选择栅极设置在第二绝缘层上。 记忆膜设置在存储孔的内壁上。 通道体设置在记忆膜的内部。 第一半导体层设置在通道主体的上表面上。 第二半导体层设置在第一半导体层上。 第一半导体层包含硅锗。 第二半导体层包含掺杂有第一杂质的硅锗。 第一半导体层和第二半导体层之间的边界设置在选择栅极的上端的位置的上方。