公开(公告)号：US20140374702A1

公开(公告)日：2014-12-25

申请号：US14480472

申请日：2014-09-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/775 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

Abstract translation: 形成霍尔效应器件和场效应晶体管，其中结合有诸如碳纳米管和/或石墨烯的碳基纳米结构层与其上形成的牺牲金属层，以在加工期间保护碳基纳米结构层。

公开(公告)号：US20140225193A1

公开(公告)日：2014-08-14

申请号：US13654416

申请日：2012-10-18

Applicant: International Business Machines Corporation

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

公开(公告)号：US20170186881A1

公开(公告)日：2017-06-29

申请号：US15237350

申请日：2016-08-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/786 ,  H01L29/16 ,  H01L21/04 ,  H01L21/3213 ,  H01L43/14 ,  H01L29/45 ,  H01L29/66 ,  H01L51/05 ,  H01L43/06 ,  H01L51/00 ,  H01L29/08

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

公开(公告)号：US20140220766A1

公开(公告)日：2014-08-07

申请号：US13966931

申请日：2013-08-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Cheng-Wei CHENG ,  JACK O. CHU ,  DEVENDRA K. SADANA ,  KUEN-TING SHIU ,  YANNING SUN

IPC: H01L21/02

CPC classification number: H01L29/267 ,  H01L21/02387 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02664 ,  H01L21/28575 ,  H01L21/3228 ,  H01L29/452 ,  H01L29/66522 ,  H01L29/772 ,  H01L29/78

Abstract: A semiconductor structure includes a III-V monocrystalline layer and a germanium surface layer. An interlayer is formed directly between the III-V monocrystalline layer and the germanium surface layer from a material selected to provide stronger nucleation bonding between the interlayer and the germanium surface layer than nucleation bonding that would be achievable directly between the III-V monocrystalline layer and the germanium surface layer such that a continuous, relatively defect-free germanium surface layer is provided.

公开(公告)号：US20140217356A1

公开(公告)日：2014-08-07

申请号：US13759711

申请日：2013-02-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： CAN BAYRAM ,  JACK O. CHU ,  CHRISTOS DIMITRAKOPOULOS ,  JEEHWAN KIM ,  HONGSIK PARK ,  DEVENDRA K. SADANA

IPC: H01L33/04

CPC classification number: H01L33/14 ,  H01L21/02378 ,  H01L21/02527 ,  H01L21/02612 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic device includes a spreading layer and a first contact layer formed over and contacting the spreading layer. The first contact layer is formed from a thermally conductive crystalline material having a thermal conductivity greater than or equal to that of an active layer material. An active layer includes one or more III-nitride layers. A second contact layer is formed over the active layer, wherein the active layer is disposed vertically between the first and second contact layers to form a vertical thin film stack.

Abstract translation: 电子设备包括扩散层和形成在扩散层上并与扩散层接触的第一接触层。 第一接触层由具有大于或等于有源层材料的导热性的导热结晶材料形成。 有源层包括一个或多个III族氮化物层。 在有源层上形成第二接触层，其中有源层垂直地设置在第一和第二接触层之间以形成垂直薄膜叠层。