公开(公告)号：US20170186881A1

公开(公告)日：2017-06-29

申请号：US15237350

申请日：2016-08-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/786 ,  H01L29/16 ,  H01L21/04 ,  H01L21/3213 ,  H01L43/14 ,  H01L29/45 ,  H01L29/66 ,  H01L51/05 ,  H01L43/06 ,  H01L51/00 ,  H01L29/08

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

公开(公告)号：US20140374702A1

公开(公告)日：2014-12-25

申请号：US14480472

申请日：2014-09-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/775 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

Abstract translation: 形成霍尔效应器件和场效应晶体管，其中结合有诸如碳纳米管和/或石墨烯的碳基纳米结构层与其上形成的牺牲金属层，以在加工期间保护碳基纳米结构层。

公开(公告)号：US20140225193A1

公开(公告)日：2014-08-14

申请号：US13654416

申请日：2012-10-18

Applicant: International Business Machines Corporation

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.