公开(公告)号：US20140131591A1

公开(公告)日：2014-05-15

申请号：US13970042

申请日：2013-08-19

Applicant: International Business Machines Corporation

Inventor： ANIRBAN BASU ,  Stephen W. Bedell ,  Devendra K. Sadana

IPC: C02F1/32 ,  C02F1/30

CPC classification number: C02F1/325 ,  A61L2/00 ,  A61L9/00 ,  C02F2201/009 ,  C02F2201/3222 ,  C02F2201/3227 ,  C02F2303/04 ,  C02F2307/02 ,  C02F2307/04 ,  Y02A20/212

Abstract: A system for disinfecting a sample of water includes a container for holding the sample of water, an array of photovoltaic cells coupled to the container for converting solar radiation into a current, and an array of light emitting diodes coupled to the container and powered by the current, wherein the array of light emitting diodes emits a germicidal wavelength of radiation. Another system for disinfecting a sample of water includes a container for holding the sample of water, an array of photovoltaic cells encircling an exterior wall of the container, for converting solar radiation into a current, and an array of light emitting diodes encircling an interior wall of the container and powered by the current, wherein the array of light emitting diodes emits a germicidal wavelength of radiation.

Abstract translation: 用于对水样品进行消毒的系统包括用于保持水样品的容器，耦合到容器的用于将太阳辐射转换成电流的光伏电池阵列，以及耦合到容器的发光二极管阵列，并由 电流，其中所述发光二极管阵列发射辐射的杀菌波长。 用于对水样品进行消毒的另一系统包括用于保持水样的容器，围绕容器外壁的光伏电池阵列，用于将太阳辐射转换为电流，以及围绕内壁的发光二极管阵列 的容器并由电流供电，其中发光二极管阵列发射辐射的杀菌波长。

公开(公告)号：US20140264446A1

公开(公告)日：2014-09-18

申请号：US13967102

申请日：2013-08-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： ANIRBAN BASU ,  CHENG-WEI CHENG ,  AMLAN MAJUMDAR ,  RYAN M. MARTIN ,  UZMA RANA ,  DEVENDRA K. SADANA ,  KUEN-TING SHIU ,  YANNING SUN

IPC: H01L29/78

CPC classification number: H01L29/785 ,  H01L29/66795

Abstract: A method for forming fin field effect transistors includes forming a dielectric layer on a silicon substrate, forming high aspect ratio trenches in the dielectric layer down to the substrate, the high aspect ratio including a height to width ratio of greater than about 1:1 and epitaxially growing a non-silicon containing semiconductor material in the trenches using an aspect ratio trapping process to form fins. The one or more dielectric layers are etched to expose a portion of the fins. A barrier layer is epitaxially grown on the portion of the fins, and a gate stack is formed over the fins. A spacer is formed around the portion of the fins and the gate stack. Dopants are implanted into the portion of the fins. Source and drain regions are grown over the fins using a non-silicon containing semiconductor material.

Abstract translation: 一种用于形成鳍状场效应晶体管的方法，包括在硅衬底上形成电介质层，在电介质层中形成高达纵横比的沟槽直至衬底，高纵横比包括大于或等于1:1的高宽比;以及 使用纵横比捕获工艺在沟槽中外延生长含硅的半导体材料以形成翅片。 蚀刻一个或多个电介质层以暴露鳍片的一部分。 在翅片的一部分上外延生长阻挡层，在鳍片上方形成栅叠层。 围绕翅片和门叠层的部分形成间隔件。 将掺杂剂植入翅片的部分。 源极和漏极区域使用非含硅半导体材料生长在翅片上。

公开(公告)号：US20170148896A1

公开(公告)日：2017-05-25

申请号：US15426566

申请日：2017-02-07

Applicant: International Business Machines Corporation

Inventor： ANIRBAN BASU ,  GUY COHEN ,  AMLAN MAJUMDAR

IPC: H01L29/66 ,  H01L29/205 ,  H01L29/201 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L29/66636 ,  H01L29/0847 ,  H01L29/201 ,  H01L29/205 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7784 ,  H01L29/785 ,  H01L29/7851

Abstract: A method for fabricating a multigate device includes forming a fin on a substrate of the multigate device, the fin being formed of a semiconductor material, growing a first conformal epitaxial layer directly on the fin and substrate, wherein the first conformal epitaxial layer is highly doped, growing a second conformal epitaxial layer directly on the first conformal epitaxial layer, wherein the second conformal epitaxial layer is highly doped, selectively removing a portion of second epitaxial layer to expose a portion of the first conformal epitaxial layer, selectively removing a portion of the first conformal epitaxial layer to expose a portion of the fin and thereby form a trench, and forming a gate within the trench.

公开(公告)号：US20160133750A1

公开(公告)日：2016-05-12

申请号：US14982687

申请日：2015-12-29

Applicant: International Business Machines Corporation

Inventor： ANIRBAN BASU ,  GUY COHEN ,  AMLAN MAJUMDAR

IPC: H01L29/78 ,  H01L29/205 ,  H01L29/778 ,  H01L29/201

CPC classification number: H01L29/66636 ,  H01L29/0847 ,  H01L29/201 ,  H01L29/205 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7784 ,  H01L29/785 ,  H01L29/7851

Abstract: A method for fabricating a multigate device includes forming a fin on a substrate of the multigate device, the fin being formed of a semiconductor material, growing a first conformal epitaxial layer directly on the fin and substrate, wherein the first conformal epitaxial layer is highly doped, growing a second conformal epitaxial layer directly on the first conformal epitaxial layer, wherein the second conformal epitaxial layer is highly doped, selectively removing a portion of second epitaxial layer to expose a portion of the first conformal epitaxial layer, selectively removing a portion of the first conformal epitaxial layer to expose a portion of the fin and thereby form a trench, and forming a gate within the trench.

公开(公告)号：US20150255568A1

公开(公告)日：2015-09-10

申请号：US14197746

申请日：2014-03-05

Applicant: International Business Machines Corporation

Inventor： ANIRBAN BASU ,  Guy Cohen ,  Amlan Majumdar

IPC: H01L29/66 ,  H01L29/205 ,  H01L29/78

CPC classification number: H01L29/205 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for fabricating a multigate device includes forming a fin on a substrate of the multigate device, the fin being formed of a semiconductor material, growing a first conformal epitaxial layer directly on the fin and substrate, wherein the first conformal epitaxial layer is undoped or lightly doped, growing a second conformal epitaxial layer directly on the first conformal epitaxial layer, wherein the second conformal epitaxial layer is highly doped, selectively removing a portion of the second epitaxial layer to expose a portion of the first conformal epitaxial layer and thereby form a trench, and forming a gate within the trench.

Abstract translation: 一种用于制造多重装置的方法包括在多重装置的衬底上形成翅片，翅片由半导体材料形成，直接在翅片和衬底上生长第一共形外延层，其中第一共形外延层未掺杂或 轻掺杂，直接在第一共形外延层上生长第二共形外延层，其中第二共形外延层是高度掺杂的，选择性地去除第二外延层的一部分以暴露第一共形外延层的一部分，从而形成 沟槽，并在沟槽内形成栅极。

公开(公告)号：US20140131287A1

公开(公告)日：2014-05-15

申请号：US13673520

申请日：2012-11-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： ANIRBAN BASU ,  Stephen W. Bedell ,  Devendra K. Sadana

IPC: C02F1/30 ,  C02F1/32

CPC classification number: C02F1/325 ,  A61L2/00 ,  A61L9/00 ,  C02F2201/009 ,  C02F2201/3222 ,  C02F2201/3227 ,  C02F2303/04 ,  C02F2307/02 ,  C02F2307/04 ,  Y02A20/212

Abstract: Disinfecting a sample of water includes generating a current using an array of photovoltaic cells, using the current to power an array of light emitting diodes, wherein the array of light emitting diodes emits a germicidal wavelength of radiation, and exposing the sample of water to the radiation. Another method for disinfecting a sample of water includes placing the sample of water within a container, wherein the container includes an array of photovoltaic cells encircling an exterior wall of the container and an array of light emitting diodes encircling an interior wall of the container, placing the container in a location exposed to solar radiation, converting the solar radiation to a current using the array of photovoltaic cells, and powering the array of light emitting diodes using the current, wherein the array of light emitting diodes emits a germicidal wavelength of radiation sufficient to disinfect the sample of water.

Abstract translation: 消毒水样包括使用光伏电池阵列产生电流，使用电流为发光二极管阵列供电，其中发光二极管阵列发射杀菌波长的辐射，并将水样品暴露于 辐射。 用于对水样品进行消毒的另一种方法包括将水样品放置在容器内，其中容器包括围绕容器外壁的光伏电池阵列和环绕容器内壁的发光二极管阵列，放置 所述容器处于暴露于太阳辐射的位置，使用所述光伏电池阵列将所述太阳辐射转换成电流，以及使用所述电流对所述发光二极管阵列供电，其中所述发光二极管阵列发射足够的辐射的杀菌波长 对水样进行消毒。