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公开(公告)号:US20250022845A1
公开(公告)日:2025-01-16
申请号:US18827351
申请日:2024-09-06
Applicant: Intel Corporation
Inventor: Adel A. Elsherbini , Feras Eid , Johanna M. Swan , Shawna M. Liff
IPC: H01L25/065 , H01L23/00 , H01L25/00 , H01L25/18
Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a first die having a first surface and an opposing second surface embedded in a first dielectric layer, where the first surface of the first die is coupled to the second surface of the package substrate by first interconnects; a second die having a first surface and an opposing second surface embedded in a second dielectric layer, where the first surface of the second die is coupled to the second surface of the first die by second interconnects; and a third die having a first surface and an opposing second surface embedded in a third dielectric layer, where the first surface of the third die is coupled to the second surface of the second die by third interconnects.
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公开(公告)号:US12199063B2
公开(公告)日:2025-01-14
申请号:US18403545
申请日:2024-01-03
Applicant: Intel Corporation
Inventor: Shawna M. Liff , Adel A. Elsherbini , Johanna M. Swan , Arun Chandrasekhar
IPC: H01L25/065 , H01L23/00 , H01L25/00 , H01L25/18
Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.
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公开(公告)号:US12165962B2
公开(公告)日:2024-12-10
申请号:US17121093
申请日:2020-12-14
Applicant: Intel Corporation
Inventor: Aleksandar Aleksov , Mohammad Enamul Kabir , Adel A. Elsherbini , Shawna M. Liff , Johanna M. Swan , Feras Eid
IPC: H01L23/00 , H01L23/498 , H01L23/538 , H01L23/31 , H01L23/48
Abstract: Disclosed herein are microelectronic assemblies including microelectronic components coupled by direct bonding, and related structures and techniques. In some embodiments, a microelectronic assembly may include a first microelectronic component including a first guard ring extending through at least a portion of a thickness of and along a perimeter; a second microelectronic component including a second guard ring extending through at least a portion of a thickness of and along a perimeter, where the first and second microelectronic components are coupled by direct bonding; and a seal ring formed by coupling the first guard ring to the second guard ring. In some embodiments, a microelectronic assembly may include a microelectronic component coupled to an interposer that includes a first liner material at a first surface; a second liner material at an opposing second surface; and a perimeter wall through the interposer and connected to the first and second liner materials.
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公开(公告)号:US20240355768A1
公开(公告)日:2024-10-24
申请号:US18761443
申请日:2024-07-02
Applicant: Intel Corporation
Inventor: Adel A. Elsherbini , Krishna Bharath , Kevin P. O'Brien , Kimin Jun , Han Wui Then , Mohammad Enamul Kabir , Gerald S. Pasdast , Feras Eid , Aleksandar Aleksov , Johanna M. Swan , Shawna M. Liff
IPC: H01L23/00 , H01L25/065
CPC classification number: H01L24/08 , H01L24/05 , H01L24/29 , H01L24/32 , H01L25/0657 , H01L28/10 , H01L2224/05147 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/0801 , H01L2224/08145 , H01L2224/0903 , H01L2224/09055 , H01L2224/09505 , H01L2224/29186 , H01L2224/32145
Abstract: Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.
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公开(公告)号:US12057402B2
公开(公告)日:2024-08-06
申请号:US17025166
申请日:2020-09-18
Applicant: Intel Corporation
Inventor: Aleksandar Aleksov , Adel A. Elsherbini , Shawna M. Liff , Johanna M. Swan , Feras Eid , Randy B. Osborne , Van H. Le
IPC: H01L23/538 , H01L23/49 , H01L25/065
CPC classification number: H01L23/5384 , H01L23/49 , H01L23/5385 , H01L23/5386 , H01L25/0657
Abstract: Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include an interposer, including an organic dielectric material, and a microelectronic component coupled to the interposer by direct bonding.
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公开(公告)号:US11967580B2
公开(公告)日:2024-04-23
申请号:US17956773
申请日:2022-09-29
Applicant: Intel Corporation
Inventor: Adel A. Elsherbini , Amr Elshazly , Arun Chandrasekhar , Shawna M. Liff , Johanna M. Swan
IPC: H01L23/48 , H01L23/498 , H01L25/00 , H01L25/065
CPC classification number: H01L25/0652 , H01L23/49822 , H01L25/50
Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate, a first die coupled to the package substrate with first interconnects, and a second die coupled to the first die with second interconnects, wherein the second die is coupled to the package substrate with third interconnects, a communication network is at least partially included in the first die and at least partially included in the second die, and the communication network includes a communication pathway between the first die and the second die.
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公开(公告)号:US11916006B2
公开(公告)日:2024-02-27
申请号:US17822200
申请日:2022-08-25
Applicant: Intel Corporation
Inventor: Adel A. Elsherbini , Kaladhar Radhakrishnan , Krishna Bharath , Shawna M. Liff , Johanna M. Swan
IPC: H01L23/498 , G05F1/46 , H01L23/00 , H01L23/522 , H01L23/64 , H01L49/02 , H01F27/24
CPC classification number: H01L23/49838 , G05F1/46 , H01L23/5226 , H01L23/642 , H01L23/645 , H01L24/17 , H01L28/10 , H01L28/40 , H01F27/24
Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a first surface and an opposing second surface; and a chiplet having a first surface and an opposing second surface, wherein the chiplet is between the surface of the package substrate and the first surface of the die, wherein the first surface of the chiplet is coupled to the surface of the package substrate and the second surface of the chiplet is coupled to the first surface of the die, and wherein the chiplet includes: a capacitor at the first surface; and an element at the second surface, wherein the element includes a switching transistor or a diode.
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公开(公告)号:US11764452B2
公开(公告)日:2023-09-19
申请号:US17672876
申请日:2022-02-16
Applicant: Intel Corporation
Inventor: Georgios Dogiamis , Adel A. Elsherbini , Telesphor Kamgaing , Henning Braunisch , Johanna M. Swan
IPC: H01P3/16 , H01L23/66 , H01P11/00 , H04B10/2581
CPC classification number: H01P3/16 , H01L23/66 , H01P11/006 , H01L2223/6627 , H04B10/2581
Abstract: Disclosed herein are various designs for dielectric waveguides, as well as methods of manufacturing such waveguides. One type of dielectric waveguides described herein includes waveguides with one or more cavities in the dielectric waveguide material. Another type of dielectric waveguides described herein includes waveguides with a conductive ridge in the dielectric waveguide material. Dielectric waveguides described herein may be dispersion reduced dielectric waveguides, compared to conventional dielectric waveguides, and may be designed to adjust the difference in the group delay between the lower frequencies and the higher frequencies of a chosen bandwidth.
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公开(公告)号:US20230127749A1
公开(公告)日:2023-04-27
申请号:US18086308
申请日:2022-12-21
Applicant: Intel Corporation
Inventor: Shawna M. Liff , Adel A. Elsherbini , Johanna M. Swan , Arun Chandrasekhar
Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.
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公开(公告)号:US20220399324A1
公开(公告)日:2022-12-15
申请号:US17344348
申请日:2021-06-10
Applicant: Intel Corporation
Inventor: Han Wui Then , Adel A. Elsherbini , Kimin Jun , Johanna M. Swan , Shawna M. Liff , Sathya Narasimman Tiagaraj , Gerald S. Pasdast , Aleksandar Aleksov , Feras Eid
IPC: H01L25/00 , H01L25/065 , H01L23/00
Abstract: A die assembly comprising: a first component layer having conductive through-connections in an insulator, a second component layer comprising a die, and an active device layer (ADL) at an interface between the first component layer and the second component layer. The ADL comprises active elements electrically coupled to the first component layer and the second component layer. The die assembly further comprises a bonding layer electrically coupling the ADL to the second component layer. In some embodiments, the die assembly further comprises another ADL at another interface between the first component layer and a package support opposite to the interface. The first component layer may comprise another die having through-substrate vias (TSVs). The die and the another die may be fabricated using different process nodes.
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