Abstract:
The present invention relates to an LCD circuit photoresist composition for manufacturing fine circuit patterns on liquid crystal display circuits or semiconductor integrated circuits, and more particularly, and LCD circuit photoresist composition including (a) mixed polymer resins comprising a novolak resin with a molecular weight ranging from 3,000 to 9,000 and a fractionated novolak resin with a molecular weight ranging from 3,500 to 10,000; (b) a diazide-type photosensitive compound; (c) a photosensitizer; and (d) organic solvents. An LCD circuit photoresist composition of the present invention has excellent photosensitivity, retention ratio, resolution, contrast, heat resistance, adhesion, and stripper solubility, thus this photoresist composition can be easily applied to industrial work places for better working environments.
Abstract:
A semiconductor memory device having dummy sense amplifiers and a method of utilizing the same are provided. Embodiments of the semiconductor memory device may include at least one dummy cell block including dummy cells and memory cells. Normal bit lines connecting the memory cells in the dummy cell block in a first direction and dummy bit lines connecting the dummy cells in the first direction. A dummy sense amplifier is also included for connecting any two of the normal bit lines and the dummy bit lines. Some of the embodiments may improve the sensing margin and refresh margin in sensing memory cells in the dummy cell, as well as increasing the redundancy efficiency and utilization of the dummy cells.
Abstract:
A method of tuning a phase of a clock signal includes performing data training on a plurality of data pins through which data are input and output, in synchronization with a data clock signal; determining one of the data pins to be a representative pin; performing clock and data recovery (CDR) on read data of the representative pin; and adjusting a phase of the data clock signal based on the CDR.
Abstract:
An apparatus and method for scrambling in a wireless communication system are provided. The apparatus includes a selector, a plurality of scramblers, and a plurality of modulators. The selector selects a scrambling scheme to be applied to a transmission bit stream according to a modulation scheme to be applied to the transmission bit stream. The plurality of scramblers scramble the transmission bit stream according to a scrambling scheme corresponding to each of a plurality of modulation schemes. The plurality of modulators modulate the scrambled transmission bit stream according to the plurality of modulation schemes.
Abstract:
A semiconductor memory device having dummy sense amplifiers and a method of utilizing the same are provided. Embodiments of the semiconductor memory device may include at least one dummy cell block including dummy cells and memory cells. Normal bit lines connecting the memory cells in the dummy cell block in a first direction and dummy bit lines connecting the dummy cells in the first direction. A dummy sense amplifier is also included for connecting any two of the normal bit lines and the dummy bit lines. Some of the embodiments may improve the sensing margin and refresh margin in sensing memory cells in the dummy cell, as well as increasing the redundancy efficiency and utilization of the dummy cells.
Abstract:
A semiconductor memory device having dummy sense amplifiers and a method of utilizing the same are provided. Embodiments of the semiconductor memory device may include at least one dummy cell block including dummy cells and memory cells. Normal bit lines connecting the memory cells in the dummy cell block in a first direction and dummy bit lines connecting the dummy cells in the first direction. A dummy sense amplifier is also included for connecting any two of the normal bit lines and the dummy bit lines. Some of the embodiments may improve the sensing margin and refresh margin in sensing memory cells in the dummy cell, as well as increasing the redundancy efficiency and utilization of the dummy cells.
Abstract:
A plasma display panel including a front substrate, a rear substrate, a display area, a non-display area including a dummy region, and a plurality of rib members is provided. The dummy region includes a first barrier rib region extending along a first direction and including portions of at least some of the plurality of barrier rib members, a second barrier rib region extending along a second direction and including portions of at least some of the plurality of barrier rib members, and at least one sector region. The sector region includes at least one sector barrier rib member extending along a direction other than the first direction and the second direction and connecting at least one portion of at least one of the barrier rib portions in the first barrier rib region to at least one of the barrier rib portions in the second barrier rib region.
Abstract:
A MRAM includes a memory cell array of spin-transfer torque magnetic random access memory (STT-MRAM) cells and a source line commonly connected to the plurality of STT-MRAM cells. A source line voltage generator generates a source line driving voltage in response to an external power supply voltage and provides the source line driving voltage to the source line.
Abstract:
An apparatus and method for scrambling in a wireless communication system are provided. The apparatus includes a selector, a plurality of scramblers, and a plurality of modulators. The selector selects a scrambling scheme to be applied to a transmission bit stream according to a modulation scheme to be applied to the transmission bit stream. The plurality of scramblers scramble the transmission bit stream according to a scrambling scheme corresponding to each of a plurality of modulation schemes. The plurality of modulators modulate the scrambled transmission bit stream according to the plurality of modulation schemes.
Abstract:
The present invention relates to a photoresist composition for digital exposure and a method of fabricating a thin film transistor substrate. The photoresist composition for digital exposure includes a binder resin including a novolak resin and a compound represented by the chemical formula (1), a photosensitizer including a diazide-based compound, and a solvent: wherein R1-R9 each include a hydrogen atom, an alkyl group, or a benzyl group, a is an integer from 0 to 10, b is an integer from 0 to 100, and c is an integer from 0 to 10.