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公开(公告)号：US08258045B2
公开(公告)日：2012-09-04
申请号：US12770290
申请日：2010-04-29
IPC分类号： H01L21/301
CPC分类号： H01L21/67092 , B23K26/032 , B23K26/0622 , B23K26/0648 , B23K26/073 , B23K26/082 , B23K26/0853 , B23K26/0876 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/78
摘要： A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
摘要翻译： 一种用于提高从半导体晶片划分的器件的裸片强度的器件处理方法。 该装置处理方法包括：倒角步骤，沿着装置的周边向器件施加具有吸收波长的脉冲激光束，从而使装置的周边倒角，其中施加在该装置中的脉冲激光束的脉冲宽度 倒角步长设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围。
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公开(公告)号：US08252667B2
公开(公告)日：2012-08-28
申请号：US12771749
申请日：2010-04-30
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/0626 , B23K26/40 , B23K2103/50 , B23K2103/56 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L2221/68327 , H01L2221/68336
摘要： A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
摘要翻译： 一种半导体晶片的激光加工方法，包括：槽形成工序，沿着形成在半导体晶片上的分割线，向半导体晶片施加具有吸收波长的脉冲激光束，从而沿着半导体上的分割线形成激光加工槽 晶片，其中在槽形成步骤中施加的脉冲激光束的脉冲宽度设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围内。
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公开(公告)号：US20100297855A1
公开(公告)日：2010-11-25
申请号：US12770290
申请日：2010-04-29
IPC分类号： H01L21/302
CPC分类号： H01L21/67092 , B23K26/032 , B23K26/0622 , B23K26/0648 , B23K26/073 , B23K26/082 , B23K26/0853 , B23K26/0876 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/78
摘要： A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
摘要翻译： 一种用于提高从半导体晶片划分的器件的裸片强度的器件处理方法。 该装置处理方法包括：倒角步骤，沿着装置的周边向器件施加具有吸收波长的脉冲激光束，从而使装置的周边倒角，其中施加在该装置中的脉冲激光束的脉冲宽度 倒角步长设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围。
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公开(公告)号：US20100297830A1
公开(公告)日：2010-11-25
申请号：US12771749
申请日：2010-04-30
IPC分类号： H01L21/268
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/0626 , B23K26/40 , B23K2103/50 , B23K2103/56 , H01L21/67132 , H01L21/67144 , H01L21/6836 , H01L2221/68327 , H01L2221/68336
摘要： A laser processing method for a semiconductor wafer including a groove forming step of applying a pulsed laser beam having an absorption wavelength to the semiconductor wafer along a division line formed on the semiconductor wafer to thereby form a laser processed groove along the division lines on the semiconductor wafer, wherein the pulse width of the pulsed laser beam to be applied in the groove forming step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
摘要翻译： 一种半导体晶片的激光加工方法，包括：槽形成工序，沿着形成在半导体晶片上的分割线，向半导体晶片施加具有吸收波长的脉冲激光束，从而沿着半导体上的分割线形成激光加工槽 晶片，其中在槽形成步骤中施加的脉冲激光束的脉冲宽度设定为2ns以下，峰值能量密度设定在5〜200GW / cm 2的范围内。
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公开(公告)号：US07557904B2
公开(公告)日：2009-07-07
申请号：US11360814
申请日：2006-02-24
申请人： Naoki Ohmiya , Satoshi Genda , Noboru Takeda , Koichi Takeyama , Yukio Morishige , Hiroshi Morikazu , Hiroshi Nomura
发明人： Naoki Ohmiya , Satoshi Genda , Noboru Takeda , Koichi Takeyama , Yukio Morishige , Hiroshi Morikazu , Hiroshi Nomura
CPC分类号： G03F7/707 , B23K26/40 , B23K37/0408 , B23K2101/40 , B23K2103/50 , B25B11/005 , B28D5/0094 , H01L21/6838
摘要： A wafer holding mechanism for holding a wafer affixed to a frame with a tape utilizing a suction force. The wafer holding mechanism includes a suction body, a wafer holder with a holding surface for holding the wafer via the tape, and a suction unit with a suction portion disposed at an outer peripheral edge of the wafer holder. The suction portion transmits a suction force across the holding surface though the outer peripheral edge of the wafer holder such that when the suction portion is covered and sealed by the tape, the wafer holder is held at the suction unit and the wafer is held at the holding surface.
摘要翻译： 一种晶片保持机构，用于利用吸力将带有胶带的胶片固定在框架上。 晶片保持机构包括抽吸体，具有用于通过带保持晶片的保持表面的晶片保持器和具有设置在晶片保持器的外周边缘处的抽吸部分的抽吸单元。 抽吸部分穿过保持表面穿过晶片保持器的外周边缘传递吸力，使得当吸引部分被带覆盖和密封时，晶片保持器被保持在抽吸单元处，并且晶片保持在 保持表面。
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公开(公告)号：US20060163224A1
公开(公告)日：2006-07-27
申请号：US11338761
申请日：2006-01-25
IPC分类号： B23K26/00
CPC分类号： B23K37/0235 , B23K26/0622 , B23K26/0853 , B23K26/0876 , B23K26/40 , B23K37/0408 , B23K37/0435 , B23K2103/172 , B23K2103/50
摘要： A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the chuck table comprises a body and a workpiece holding member disposed on the top surface of the body, and the workpiece holding member is made of a material which transmits a laser beam having a predetermined wavelength.
摘要翻译： 一种激光束处理机，包括用于保持工件的卡盘台，用于将激光束施加到夹持在卡盘台上的工件的激光束施加装置，以及用于移动卡盘台和激光束施加装置的加工进给装置 相对于彼此，其中所述卡盘台包括主体和设置在所述主体的顶表面上的工件保持构件，并且所述工件保持构件由透射具有预定波长的激光束的材料制成。
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公开(公告)号：US07642485B2
公开(公告)日：2010-01-05
申请号：US11338761
申请日：2006-01-25
IPC分类号： B23K26/02
CPC分类号： B23K37/0235 , B23K26/0622 , B23K26/0853 , B23K26/0876 , B23K26/40 , B23K37/0408 , B23K37/0435 , B23K2103/172 , B23K2103/50
摘要： A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the chuck table comprises a body and a workpiece holding member disposed on the top surface of the body, and the workpiece holding member is made of a material which transmits a laser beam having a predetermined wavelength.
摘要翻译： 一种激光束处理机，包括用于保持工件的卡盘台，用于将激光束施加到保持在卡盘台上的工件的激光束施加装置，以及用于移动卡盘台和激光束施加装置的加工进给装置 相对于彼此，其中所述卡盘台包括主体和设置在所述主体的顶表面上的工件保持构件，并且所述工件保持构件由透射具有预定波长的激光束的材料制成。
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公开(公告)号：US20060203222A1
公开(公告)日：2006-09-14
申请号：US11360814
申请日：2006-02-24
申请人： Naoki Ohmiya , Satoshi Genda , Noboru Takeda , Koichi Takeyama , Yukio Morishige , Hiroshi Morikazu , Hiroshi Nomura
发明人： Naoki Ohmiya , Satoshi Genda , Noboru Takeda , Koichi Takeyama , Yukio Morishige , Hiroshi Morikazu , Hiroshi Nomura
IPC分类号： G03B27/58
CPC分类号： G03F7/707 , B23K26/40 , B23K37/0408 , B23K2101/40 , B23K2103/50 , B25B11/005 , B28D5/0094 , H01L21/6838
摘要： To prevent heating of a holding table that holds a wafer when using a laser beam to process a wafer, a wafer holding mechanism has a wafer holder having a holding surface that holds a wafer and a suction part formed on an outer peripheral side of the wafer holder, with the wafer held to the holding surface by a suction force transmitted to the holding surface from the suction part through an outer peripheral edge part of the wafer holder. The wafer can be held in place with suction without forming fine holes that penetrate the wafer holder from a front surface thereof to a back surface thereof, and therefore a material of good permeability and dispersibility with respect to the wavelength of the laser light can be selected for the wafer holder.
摘要翻译： 为了防止在使用激光束处理晶片时保持晶片的保持台的加热，晶片保持机构具有晶片保持器，该晶片保持器具有保持晶片的保持表面和形成在晶片的外周侧的吸引部分 保持器，其中晶片通过来自抽吸部分的透镜通过晶片保持器的外周边缘部分传递到保持表面的吸力保持在保持表面上。 可以通过抽吸将晶片保持在适当位置，而不会形成从其前表面到其后表面穿透晶片保持器的细孔，因此可以选择相对于激光的波长具有良好的渗透性和分散性的材料 用于晶片座。
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公开(公告)号：US20060035411A1
公开(公告)日：2006-02-16
申请号：US11200142
申请日：2005-08-10
申请人： Ryugo Oba , Kenji Furuta , Hitoshi Hoshino , Nobuyasu Kitahara , Noboru Takeda
发明人： Ryugo Oba , Kenji Furuta , Hitoshi Hoshino , Nobuyasu Kitahara , Noboru Takeda
IPC分类号： H01L21/50
CPC分类号： H01L21/78 , B23K26/0622 , B23K26/0736 , B23K26/364 , B23K26/40 , B23K2103/50
摘要： A laser processing method for forming a laser groove along dividing lines by applying a pulse laser beam along the dividing lines formed on a workpiece, the method comprising the steps of forming the focusing spot of the pulse laser beam in a shape of oval, positioning the long axis of the oval focusing spot along each of the dividing lines, and moving the focusing spot and the workpiece along the dividing line relative to each other.
摘要翻译： 一种激光加工方法，通过沿着形成在工件上的分割线施加脉冲激光束沿着分割线形成激光槽，该方法包括以下步骤：将脉冲激光束的聚焦点形成为椭圆形， 沿着每条分割线的椭圆形聚焦点的长轴，并且使聚焦点和工件沿分割线相对于彼此移动。
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10.发明授权Method of detecting condensing spot position in laser beam processing apparatus 有权检测激光束处理装置中聚光点位置的方法公开(公告)号：US08957347B2
公开(公告)日：2015-02-17
申请号：US13617046
申请日：2012-09-14
IPC分类号： H01L21/30 , H01L21/304 , B23K26/00 , B23K26/04 , B23K26/40
CPC分类号： B23K26/048 , B23K26/00 , B23K26/0006 , B23K26/40 , B23K2103/50 , B23K2103/56 , H01L21/30 , H01L21/304 , H01L21/3043 , H01L2221/00
摘要： A method of detecting a condensing spot position in a laser beam processing apparatus, including: a detection position setting step of setting a plurality of Z-axis directional positions in a range from a starting point to an ending point of detection positions into which the condenser is positioned; a laser beam processed groove forming step of sequentially positioning the condenser into the detection positions in the range from the starting point to the ending point, performing a predetermined interval indexing feeding by operating indexing feeding means each time the detection position for the condenser is changed, and forming a laser beam processed groove of a predetermined length in the plate-shaped body at each of the detection positions for the condenser; and a laser beam processed groove imaging step of imaging the laser beam processed grooves formed in the plate-shaped body by imaging means.
摘要翻译： 一种检测激光束处理装置中的聚光点位置的方法，包括：检测位置设定步骤，在从所述冷凝器的检测位置的起始点到终点的范围内设定多个Z轴方向位置 定位 激光束处理槽形成步骤，将冷凝器顺序地定位在从起点到终点的范围内的检测位置，每当改变冷凝器的检测位置时，通过操作分度输送装置执行预定的间隔分度进给， 以及在所述冷凝器的每个检测位置处，在所述板状体中形成预定长度的激光束处理槽; 以及激光束处理槽成像步骤，通过成像装置对形成在板状体中的激光束处理槽进行成像。
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