发明申请
- 专利标题： DEVICE PROCESSING METHOD
- 专利标题（中）： 设备处理方法
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申请号： US12770290申请日： 2010-04-29
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公开(公告)号： US20100297855A1公开(公告)日： 2010-11-25
- 发明人: Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
- 申请人： Hiroshi Morikazu , Noboru Takeda , Hirokazu Matsumoto
- 申请人地址： JP Tokyo
- 专利权人： DISCO CORPORATION
- 当前专利权人： DISCO CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-123435 20090521
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A device processing method for improving the die strength of a device divided from a semiconductor wafer. The device processing method includes a chamfering step of applying a pulsed laser beam having an absorption wavelength to the device along the periphery of the device to thereby chamfer the periphery of the device, wherein the pulse width of the pulsed laser beam to be applied in the chamfering step is set to 2 ns or less, and the peak energy density is set in the range of 5 to 200 GW/cm2.
公开/授权文献
- US08258045B2 Device processing method 公开/授权日：2012-09-04
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