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    Sheet peeling method and sheet peeling apparatus using peeling tool
    1.
    发明授权
    Sheet peeling method and sheet peeling apparatus using peeling tool 有权

    公开(公告)号：US12122135B2

    公开(公告)日：2024-10-22

    申请号：US18048962

    申请日：2022-10-24

    申请人： DISCO CORPORATION

    发明人： Yoshinori Kakinuma

    IPC分类号： B32B43/00

    CPC分类号： B32B43/006 ,  B32B2457/14 ,  B32B2551/00 ,  Y10T156/1168 ,  Y10T156/1174 ,  Y10T156/195

    摘要： A peeling tool includes a lower surface portion that is to be placed on a holding sheet affixed to a first surface of a workpiece, an upper surface portion corresponding to a second surface of the workpiece to which a protective sheet is affixed, and an abutting portion that has a shape conforming to an outer peripheral shape of the workpiece, that has a thickness corresponding to a thickness of the workpiece, and that is to abut on an outer peripheral portion of the workpiece. The upper surface portion has a width larger than a width of a peeling tape that is to be affixed to the protective sheet and used for peeling off the protective sheet, and is formed of a material that rejects affixing of the peeling tape. The lower surface portion is formed of a material that rejects affixing of the holding sheet.

    Spindle unit and processing apparatus
    2.
    发明授权
    Spindle unit and processing apparatus 有权

    公开(公告)号：US12109667B2

    公开(公告)日：2024-10-08

    申请号：US17398425

    申请日：2021-08-10

    申请人： DISCO CORPORATION

    发明人： Hiroyuki Watanabe

    IPC分类号： B24B47/12 ,  B24B49/08 ,  F16C17/04

    CPC分类号： B24B47/12 ,  B24B49/08 ,  F16C17/04

    摘要： A spindle unit includes a spindle having a processing tool fitted to a distal end of the spindle; and a spindle housing having a thrust bearing and a radial bearing configured to support the spindle by air in a rotatable and noncontact manner, the thrust bearing including an air supply portion configured to supply air to a gap between an outer surface of the spindle, the outer surface being in a direction orthogonal to an axial direction of the spindle, and an inner surface of the spindle housing, and an adjusting unit capable of adjusting a distance of the gap in a direction perpendicular to the outer surface of the spindle.

    Manufacturing method of device chip
    3.
    发明授权
    Manufacturing method of device chip 有权

    公开(公告)号：US12107010B2

    公开(公告)日：2024-10-01

    申请号：US17446744

    申请日：2021-09-02

    申请人： DISCO CORPORATION

    发明人： Koichi Shigematsu ,  Kei Tanaka

    IPC分类号： H01L21/78

    CPC分类号： H01L21/78

    摘要： A manufacturing method of a device chip includes removing a film in regions corresponding to streets, forming a modified layer inside a wafer by irradiating a laser beam from the back surface side of the wafer along regions corresponding to the regions from which the film has been removed, and giving an external force to the wafer to divide the wafer into individual device chips. In film removal, the distance from an end part of the street in the width direction to the region from which the film is to be removed is set equal to or shorter than a predetermined upper limit value to cause formation of a step between a region in which a substrate is exposed and a region coated with the film at an outer edge part of the device chip when the wafer is divided into the individual device chips in the dividing step.

    Cutting method
    4.
    发明授权
    Cutting method 有权

    公开(公告)号：US12097633B2

    公开(公告)日：2024-09-24

    申请号：US17392505

    申请日：2021-08-03

    申请人： DISCO CORPORATION

    发明人： Takashi Okamura ,  Shigenori Harada

    IPC分类号： B26D7/08 ,  B28D5/04 ,  H01L21/78 ,  B26D11/00

    CPC分类号： B26D7/086 ,  B28D5/047 ,  H01L21/78 ,  B26D2011/005

    摘要： Provided is a cutting method of cutting a workpiece by using a cutting apparatus including a chuck table configured to hold the workpiece and a cutting unit having a cutting blade configured to cut the workpiece held by the chuck table and an ultrasonic vibrator configured to ultrasonically vibrate the cutting blade in a radial direction of the cutting blade. The cutting method includes a holding step of holding the workpiece by the chuck table, and a cutting step of performing ultrasonic cutting that cuts the workpiece by the cutting blade vibrated ultrasonically and normal cutting that cuts the workpiece by the cutting blade not vibrated ultrasonically on the same cutting line of a plurality of cutting lines set on the workpiece.

    Wafer processing method
    6.
    发明授权
    Wafer processing method 有权

    公开(公告)号：US12094776B2

    公开(公告)日：2024-09-17

    申请号：US17447580

    申请日：2021-09-14

    申请人： DISCO CORPORATION

    发明人： Susumu Yokoo ,  Hiroyuki Takahashi ,  Kentaro Wada ,  Yoshio Watanabe ,  Kenji Okazaki ,  Yoshiteru Nishida

    IPC分类号： H01L21/78 ,  H01L21/3065 ,  H01L21/67

    CPC分类号： H01L21/78 ,  H01L21/3065 ,  H01L21/67069

    摘要： A wafer processing method includes: a resin film coating step of coating an upper surface of a wafer with a water-soluble resin and coating a dicing tape exposed between the wafer and a frame with a water-soluble resin, and solidifying the water-soluble resin to form a resin film, a partial resin film removing step of removing the resin film from regions to be divided of the wafer to partially expose the upper surface of the wafer, an etching step of subjecting the regions to be divided of the wafer to plasma etching to divide the wafer into individual device chips, and a whole resin film removing step of cleaning a frame unit to remove wholly the resin film.

    PROCESSING METHOD OF BONDED WAFER
    8.
    发明公开
    PROCESSING METHOD OF BONDED WAFER 审中-公开

    公开(公告)号：US20240304457A1

    公开(公告)日：2024-09-12

    申请号：US18586856

    申请日：2024-02-26

    申请人： DISCO CORPORATION

    发明人： Hayato TANAKA ,  Akira MIZUTANI

    IPC分类号： H01L21/322 ,  B23K26/53 ,  H01L21/304

    CPC分类号： H01L21/3221 ,  B23K26/53 ,  H01L21/304

    摘要： A method of processing a bonded wafer includes applying a laser beam having a wavelength transmittable through a first wafer to a first wafer from a reverse Sublaser beam within the first wafer to form a modified layer in the first wafer and cracks developed from the modified layer and extending toward an outer circumferential portion of the first wafer along the bonding layer, and grinding the reverse side of the first wafer to thin down the first wafer. A plurality of modified layers are formed in the first wafer at positions spaced parallel to the plane of the first wafer radially inwardly from the outer circumferential portion of the first wafer, developing cracks in and along the joining layer toward the outer circumferential portion to form a removal initiating point for removing a chamfered edge.

    PROCESSING METHOD OF BONDED WAFER
    10.
    发明公开
    PROCESSING METHOD OF BONDED WAFER 审中-公开

    公开(公告)号：US20240297052A1

    公开(公告)日：2024-09-05

    申请号：US18582983

    申请日：2024-02-21

    申请人： DISCO CORPORATION

    发明人： Hayato TANAKA ,  Hayato IGA

    IPC分类号： H01L21/322 ,  B23K26/53 ,  H01L21/304

    CPC分类号： H01L21/3221 ,  B23K26/53 ,  H01L21/304

    摘要： A method of processing a bonded wafer includes a modified layer forming step of applying a laser beam to a first wafer from a reverse side thereof while positioning a focused spot of the laser beam within the first wafer to form a modified layer in the first wafer and cracks developed from the modified layer and extending toward an outer circumferential portion of the first wafer along the bonding layer, and a grinding step of grinding the reverse side of the first wafer to thin down the first wafer. In the modified layer forming step, the focused spot of the laser beam includes multi-focused spots, and a line interconnecting the multi-focused spots forms a depression angle ranging from 15 to 50 degrees toward the outer circumferential portion of the first wafer with respect to a line parallel to a plane of the first wafer.