公开(公告)号：US08673695B2

公开(公告)日：2014-03-18

申请号：US13308937

申请日：2011-12-01

申请人： Takashi Okamura ,  Hitoshi Hoshino

发明人： Takashi Okamura ,  Hitoshi Hoshino

IPC分类号： H01L21/00

CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50

摘要： A sapphire wafer dividing method including a modified layer forming step of forming a plurality of modified layers inside a sapphire wafer along a plurality of crossing division lines formed on the front side where a light emitting layer is formed, and a chamfering and dividing step of forming a plurality of cut grooves on the back side of the sapphire wafer along the division lines, thereby dividing the sapphire wafer into individual light emitting devices along the modified layers as a division start point, wherein the corners of the back side of each light emitting device are chamfered by the formation of the cut grooves in the chamfering and dividing step.

摘要翻译： 一种蓝宝石晶片分割方法，包括：沿着形成在形成有发光层的正面上的多个交叉分割线，在蓝宝石晶片内形成多个改质层的改质层形成工序;以及倒角分割工序， 沿着分割线在蓝宝石晶片的背侧上的多个切割凹槽，从而将蓝宝石晶片沿着改性层划分成单独的发光器件作为分割开始点，其中每个发光器件的背面的角部 在倒角和分割步骤中通过切割槽的形成而被倒角。

公开(公告)号：US08497189B1

公开(公告)日：2013-07-30

申请号：US13541191

申请日：2012-07-03

申请人： Hitoshi Hoshino

发明人： Hitoshi Hoshino

IPC分类号： H01L21/46

CPC分类号： H01L33/0095 ,  B23K26/009 ,  B23K26/0624 ,  B23K26/0853 ,  B23K26/142 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L33/60

摘要： A wafer has, on a front face thereof, a device region in which a device is formed in regions partitioned by a plurality of scheduled division lines. An outer peripheral region surrounds the device region. A reflecting film of a predetermined width is formed from the outermost periphery of the wafer on a rear face of the wafer corresponding to the outer peripheral region. The front face side of the wafer is held in a chuck table, and a focal point of a pulsed laser beam of a wavelength having permeability through the wafer is positioned in the inside of the wafer corresponding to the scheduled division lines. The pulsed laser beam is irradiated from the rear face side of the wafer to form modified layers individually serving as a start point of division along the scheduled division lines in the inside of the wafer.

摘要翻译： 晶片在其正面具有在由多个调度分割线划分的区域中形成器件的器件区域。 外围区域围绕设备区域。 在与外周区域对应的晶片的背面上，从晶片的最外周形成规定宽度的反射膜。 将晶片的正面侧保持在卡盘台中，将具有通过晶片的磁导率的波长的脉冲激光束的焦点位于与调度的分割线对应的晶片的内部。 从晶片的背面侧照射脉冲激光束，形成分别作为晶片内部的调度分割线的分割开始点的改质层。

公开(公告)号：US20130161797A1

公开(公告)日：2013-06-27

申请号：US13582587

申请日：2011-03-04

申请人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

发明人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

IPC分类号： H01L21/02 ,  H01L29/06

CPC分类号： C30B33/04 ,  H01L21/268 ,  H01L29/205

摘要： In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region and a second region obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film.

摘要翻译： 为了校正由形成多层膜而产生的翘曲，提供了单晶衬底，其包括设置在包括第一区域和第二区域的两个区域之一中的热变性层，所述第一区域和第二区域通过将单晶衬底 并且其朝向设置有热变性层的区域的表面的侧面翘曲翘曲，单晶衬底的制造方法，具有使用单层的多层膜的单晶衬底的制造方法 晶体基板以及使用具有多层膜的单晶基板的制造方法的元件制造方法。

公开(公告)号：US20130082358A1

公开(公告)日：2013-04-04

申请号：US13582570

申请日：2011-03-04

申请人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

发明人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

IPC分类号： H01L23/00 ,  H01L21/02

CPC分类号： H01L23/564 ,  C30B29/20 ,  C30B33/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/02686 ,  H01L21/268 ,  H01L29/045 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to correct warpage that occurs in formation of a multilayer film, provided are a single crystal substrate with a multilayer film, a manufacturing method therefor, and an element manufacturing method using the manufacturing method. The single crystal substrate with a multilayer film includes: a single crystal substrate (20); a multilayer film (30) including two or more layers that is formed on one surface of the single crystal substrate (20) and having a compressive stress; and a heat-denatured layer (22) provided, of two regions (20U, 20D) obtained by bisecting the single crystal substrate (20) in the thickness direction thereof, at least in the region (20D) on the side of the surface opposite to the one surface of the single crystal substrate (20) having the multilayer film (30) formed thereon.

摘要翻译： 为了校正在形成多层膜时发生的翘曲，提供了具有多层膜的单晶基板，其制造方法和使用该制造方法的元件制造方法。 具有多层膜的单晶衬底包括：单晶衬底（20）; 包括形成在所述单晶衬底（20）的一个表面上并且具有压应力的两层或更多层的多层膜（30） 和设置在所述单晶衬底（20）的厚度方向上将所述单晶衬底（20）平面分割成两个区域（20U，20D）的热变性层（22）至少在所述表面相对侧的区域（20D）中 到其上形成有多层膜（30）的单晶基板（20）的一个表面。

公开(公告)号：US20120156816A1

公开(公告)日：2012-06-21

申请号：US13308937

申请日：2011-12-01

申请人： Takashi Okamura ,  Hitoshi Hoshino

发明人： Takashi Okamura ,  Hitoshi Hoshino

IPC分类号： H01L33/02

CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50

摘要： A sapphire wafer dividing method including a modified layer forming step of forming a plurality of modified layers inside a sapphire wafer along a plurality of crossing division lines formed on the front side where a light emitting layer is formed, and a chamfering and dividing step of forming a plurality of cut grooves on the back side of the sapphire wafer along the division lines, thereby dividing the sapphire wafer into individual light emitting devices along the modified layers as a division start point, wherein the corners of the back side of each light emitting device are chamfered by the formation of the cut grooves in the chamfering and dividing step.

摘要翻译： 一种蓝宝石晶片分割方法，包括：沿着形成在形成有发光层的正面上的多个交叉分割线，在蓝宝石晶片内形成多个改质层的改质层形成工序;以及倒角分割工序， 沿着分割线在蓝宝石晶片的背侧上的多个切割凹槽，从而将蓝宝石晶片沿着改性层划分成单独的发光器件作为分割开始点，其中每个发光器件的背面的角部 在倒角和分割步骤中通过切割槽的形成而被倒角。

公开(公告)号：US20120083059A1

公开(公告)日：2012-04-05

申请号：US13238887

申请日：2011-09-21

申请人： Hitoshi Hoshino ,  Hiroumi Ueno ,  Yuji Nitta ,  Takashi Okamura

发明人： Hitoshi Hoshino ,  Hiroumi Ueno ,  Yuji Nitta ,  Takashi Okamura

IPC分类号： H01L33/08

CPC分类号： H01L33/0095

摘要： A sapphire wafer dividing method including a cut groove forming step of forming a plurality of cut grooves on the back side of a sapphire wafer along a plurality of crossing division lines formed on the front side where a light emitting layer is formed, a modified layer forming step of forming a plurality of modified layers inside the sapphire wafer along the division lines, and a dividing step of dividing the sapphire wafer into individual light emitting devices along the modified layers as a division start point, thereby chamfering the corners of the back side of each light emitting device owing to the formation of the cut grooves in the cut groove forming step.

摘要翻译： 一种蓝宝石晶片分割方法，包括切割槽形成步骤，沿着形成在形成发光层的正面上的多个交叉分割线在蓝宝石晶片的背面上形成多个切割槽，形成改性层 沿着分割线在蓝宝石晶片内部形成多个改性层的步骤，以及分割步骤，将蓝宝石晶片沿着改性层划分为独立的发光器件，作为分割开始点，从而将背面的角部倒角 每个发光器件由于在切槽形成步骤中形成切割槽。

公开(公告)号：US20120018732A1

公开(公告)日：2012-01-26

申请号：US13144920

申请日：2009-12-04

申请人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino

发明人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino

IPC分类号： H01L29/06 ,  H01L21/20 ,  H01L21/26

CPC分类号： C30B29/20 ,  C30B25/186 ,  C30B29/403 ,  C30B33/04 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02686

摘要： Sapphire substrates are used chiefly for epitaxial growth of nitride semiconductor layers, to provide a sapphire substrate of which the shape and/or amount of warping can be controlled efficiently and precisely and of which substrate warping that occurs during layer formation can be suppressed and substrate warping behavior can be minimized, to provide nitride semiconductor layer growth bodies, nitride semiconductor devices, and nitride semiconductor bulk substrates using such substrates, and to provide a method of manufacturing these products. Reformed domain patterns are formed within a sapphire substrate and the warp shape and/or amount of warping of the sapphire substrate are controlled by means of multiphoton absorption by condensing and scanning a pulsed laser through a polished surface of the sapphire substrate. When nitride semiconductor layers are formed using sapphire substrates obtained by means of this invention, substrate warping during layer formation is suppressed and substrate warping behavior is minimized so that layer quality and uniformity are improved and the quality and yield of nitride semiconductor devices is increased.

摘要翻译： 蓝宝石衬底主要用于氮化物半导体层的外延生长，以提供蓝宝石衬底，其可以有效和精确地控制翘曲的形状和/或量，并且可以抑制在层形成期间发生的衬底翘曲并且衬底翘曲 可以最小化行为，提供使用这种基板的氮化物半导体层生长体，氮化物半导体器件和氮化物半导体体基板，并提供制造这些产品的方法。 在蓝宝石衬底内形成改质区域图案，通过将脉冲激光通过蓝宝石衬底的抛光表面进行冷凝和扫描，借助多光子吸收来控制蓝宝石衬底的翘曲形状和/或翘曲量。 当使用通过本发明获得的蓝宝石衬底形成氮化物半导体层时，抑制了层形成期间的衬底翘曲，并且使衬底翘曲行为最小化，从而提高了层的质量和均匀性，并且提高了氮化物半导体器件的质量和产率。

公开(公告)号：US08049134B2

公开(公告)日：2011-11-01

申请号：US12110916

申请日：2008-04-28

申请人： Keiji Nomaru ,  Hitoshi Hoshino ,  Koji Yamaguchi

发明人： Keiji Nomaru ,  Hitoshi Hoshino ,  Koji Yamaguchi

IPC分类号： B23K26/067 ,  H01L21/301

CPC分类号： B23K26/0604 ,  B23K26/042 ,  B23K26/067 ,  B23K26/0676 ,  B23K26/0853 ,  B23K26/0884 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50

摘要： A laser processing machine having a laser beam irradiation unit is provided. The laser beam irradiation unit includes: a laser beam oscillation section; a beam splitter adapted to split the laser beam emitted from the laser beam oscillation section into a first laser beam and a second laser beam; a condenser lens adapted to condense the first and second laser beams; a prism adapted to lead the first and second laser beams split by the beam splitter to the condenser lens; a first angle-changing mirror disposed on a first optical path adapted to lead the first laser beam split by the beam splitter; a second angle-changing mirror disposed on a second optical path adapted to lead the second laser beam split by the beam splitter to the prism; and a half-wave plate disposed in the first or second optical path to allow one of respective directions of the first and second polarization planes to be aligned with the other.

摘要翻译： 提供具有激光束照射单元的激光加工机。 激光束照射单元包括：激光束振荡部; 分束器，适于将从激光束振荡部分发射的激光束分成第一激光束和第二激光束; 聚光透镜，适于冷凝第一和第二激光束; 棱镜，适于将由分束器分裂的第一和第二激光束引导到聚光透镜; 第一角度改变镜，设置在适于引导由分束器分裂的第一激光束的第一光路上; 第二角度改变镜，设置在第二光路上，适于将由分束器分裂的第二激光束引导到棱镜; 以及设置在第一或第二光路中的半波片，以允许第一和第二偏振面的各个方向之一与另一个对准。

公开(公告)号：US07977215B2

公开(公告)日：2011-07-12

申请号：US12496436

申请日：2009-07-01

申请人： Hitoshi Hoshino ,  Takashi Yamaguchi

发明人： Hitoshi Hoshino ,  Takashi Yamaguchi

IPC分类号： H01L21/78 ,  H01L21/46

CPC分类号： G02B6/13 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/50 ,  B24B7/228 ,  B24B37/042 ,  G02B6/3688

摘要： A method of dividing an optical device wafer includes: a laser beam processing step of performing laser beam processing to provide an optical device wafer with breakage starting points along streets on the face side of the optical device wafer; a protective plate bonding step of bonding the face side of the optical device wafer to a surface of a highly rigid protective plate with a bonding agent permitting peeling; a back side grinding step of grinding the back side of the optical device wafer so as to form the optical device wafer to a finished thickness of the optical devices; a wafer supporting step of adhering the back-side surface of the optical device wafer to a surface of a dicing tape, and peeling the protective plate adhered to the face side of the optical device wafer; and a wafer dividing step of exerting an external force on the optical device wafer so as to break up the optical device wafer along the streets along which the breakage starting points have been formed, thereby dividing the optical device wafer into the individual optical devices.

摘要翻译： 一种分割光学元件晶片的方法包括：激光束处理步骤，执行激光束处理，以向光学器件晶片提供沿着光学器件晶片的正面侧上的街道的断裂起始点; 保护板接合步骤，用粘合剂剥离光学器件晶片的表面与高度刚性的保护板的表面接合; 背面磨削步骤，其研磨所述光学器件晶片的背面，以便将所述光学器件晶片形成为所述光学器件的成品厚度; 将所述光学器件晶片的背面粘接到切割带的表面的晶片支撑步骤，以及剥离粘附到所述光学器件晶片的所述正面的所述保护板; 以及在光学器件晶片上施加外力以沿着已经形成有断裂起点的街道分裂光学器件晶片，从而将光学器件晶片分成各个光学器件的晶片分割步骤。

公开(公告)号：US20110133235A1

公开(公告)日：2011-06-09

申请号：US12952489

申请日：2010-11-23

申请人： Hitoshi Hoshino ,  Toshiyuki Tateishi

发明人： Hitoshi Hoshino ,  Toshiyuki Tateishi

IPC分类号： H01L33/58 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L33/007

摘要： A light emitting device including a sapphire layer and a light emitting layer formed on the sapphire layer. The sapphire layer has a polygonal sectional shape whose internal angle is an obtuse angle, such as a regular hexagonal shape. Light emitted from the light emitting layer is totally reflected on one side surface of the sapphire layer and next transmitted through another side surface of the sapphire layer.

摘要翻译： 一种发光器件，包括形成在蓝宝石层上的蓝宝石层和发光层。 蓝宝石层具有内角为正六边形的钝角的多边形截面形状。 从发光层发射的光在蓝宝石层的一个侧表面上被全反射，然后透过蓝宝石层的另一侧表面。