公开(公告)号：US09105472B2

公开(公告)日：2015-08-11

申请号：US13639143

申请日：2011-04-06

申请人： Hideo Aida ,  Natsuko Aota

发明人： Hideo Aida ,  Natsuko Aota

IPC分类号： B32B3/00 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02658 ,  Y10T428/21 ,  Y10T428/24355

摘要： Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. The single-crystal substrate has a roughened surface formed on at least a partial region of a surface of the single-crystal substrate. And in order to obtain the single-crystal substrate having a crystalline film, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate.

摘要翻译： 提供一种用于外延生长的单晶衬底，其上可以形成具有抑制或消除其应力的结晶膜​​，具有结晶膜的单晶衬底，结晶膜，制造具有 结晶性膜，结晶性基材的制造方法以及元件的制造方法。 单晶衬底在单晶衬底的表面的至少一部分区域上形成粗糙表面。 为了得到具有结晶膜的单晶基板，通过在未形成粗糙面的粗糙面未成形面上进行外延生长而形成单晶膜，并且结晶膜的结晶度低于 通过在单晶衬底的粗糙表面形成表面上外延生长形成单晶膜。

公开(公告)号：US4727382A

公开(公告)日：1988-02-23

申请号：US924879

申请日：1986-10-30

申请人： Kiyoshi Negishi ,  Shinyu Ikeda ,  Manabu Imoto ,  Hideo Aida

发明人： Kiyoshi Negishi ,  Shinyu Ikeda ,  Manabu Imoto ,  Hideo Aida

IPC分类号： G06K15/12 ,  G01D9/42 ,  H04N1/21

CPC分类号： G06K15/1214 ,  G06K15/1228

摘要： The present invention provides an intensity control device for a laser in a laser beam printer that produces a hard copy of image information by copy-processing a photosensitive surface scanned by the laser while it is in a scanning mode during which the laser is modulated by the image information. The intensity control device according to the present invention stores a first representation of a present light intensity of the laser during its non-scanning mode. It further stores a second representations of a user selected image density for a hard copy produced by the printer. The first and second representations are combined for forming a control voltage during a non-scanning mode of the laser. Finally, a current is produced that is supplied to the laser in response to the control voltage such that the intensity of light produced by the laser is dependent on both the first and second representations.

摘要翻译： 本发明提供了一种用于激光束打印机中的激光器的强度控制装置，其通过在处于扫描模式的同时由激光器扫描的扫描模式下复印处理由激光扫描的感光表面而产生图像信息的硬拷贝， 图像信息。 根据本发明的强度控制装置在其非扫描模式期间存储激光器的当前光强度的第一表示。 它还存储由打印机产生的硬拷贝的用户选择的图像密度的第二表示。 第一和第二表示被组合用于在激光器的非扫描模式期间形成控制电压。 最后，产生响应于控制电压被提供给激光器的电流，使得由激光器产生的光的强度取决于第一和第二表示。

公开(公告)号：US09065032B2

公开(公告)日：2015-06-23

申请号：US14119694

申请日：2012-04-03

申请人： Hideo Aida ,  Natsuko Aota ,  Hidetoshi Takeda ,  Keiji Honjo ,  Hitoshi Hoshino

发明人： Hideo Aida ,  Natsuko Aota ,  Hidetoshi Takeda ,  Keiji Honjo ,  Hitoshi Hoshino

IPC分类号： H01L21/00 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/382 ,  H01L33/387 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Provided are a method of manufacturing a light-emitting element by which a light-emitting element (80) is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer (40) is formed on one face (32T) of a monocrystalline substrate (30A) for a light-emitting element. Next, the other face (32B) of the monocrystalline substrate (30A) for a light-emitting element is polished until a state where a vertical hole (34A) penetrates the monocrystalline substrate (30A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (34B) from the side of the vertical hole (34B) closer to an opening (36B) in the other face (32B) to form a conductive portion (50) that is continuous from a side closer to the light-emitting element layer (40) to the opening (36B) in the other face (32B).

摘要翻译： 提供了通过以下步骤制造发光元件（80）的发光元件的制造方法以及采用该方法制造的发光元件。 发光元件层（40）形成在用于发光元件的单晶衬底（30A）的一个面（32T）上。 接下来，将用于发光元件的单晶衬底（30A）的另一面（32B）抛光直到垂直孔（34A）在其厚度方向上穿透发光元件的单晶衬底（30A）的状态 成立 接着，从垂直孔（34B）侧的另一面（32B）的开口（36B）的侧面向垂直孔（34B）填充导电性材料，形成导电部（50） 靠近发光元件层（40）的一侧到另一面（32B）中的开口（36B）的一侧。

公开(公告)号：US20130062734A1

公开(公告)日：2013-03-14

申请号：US13582532

申请日：2011-03-04

申请人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

发明人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

IPC分类号： H01L29/20 ,  H01L21/205

CPC分类号： H01L21/268 ,  C30B33/04 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02428 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02686 ,  H01L21/02691

摘要： Provided are a crystalline film in which variations in the crystal axis angle after separation from a substrate for epitaxial growth have been eliminated, and various devices in which the properties thereof have been improved by including the crystalline film. And the crystalline film has a thickness of 300 μm or more and 10 mm or less and reformed region pattern is formed in an internal portion of the crystalline film.

摘要翻译： 提供了一种结晶膜，其中已经消除了与用于外延生长的衬底分离之后的晶轴角度的变化，并且通过包括结晶膜而提高了其性能的各种器件。 并且结晶膜的厚度为300μm以上且10mm以下，并且在结晶膜的内部形成有改质区域图案。

公开(公告)号：US20130161797A1

公开(公告)日：2013-06-27

申请号：US13582587

申请日：2011-03-04

申请人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

发明人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

IPC分类号： H01L21/02 ,  H01L29/06

CPC分类号： C30B33/04 ,  H01L21/268 ,  H01L29/205

摘要： In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region and a second region obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film.

摘要翻译： 为了校正由形成多层膜而产生的翘曲，提供了单晶衬底，其包括设置在包括第一区域和第二区域的两个区域之一中的热变性层，所述第一区域和第二区域通过将单晶衬底 并且其朝向设置有热变性层的区域的表面的侧面翘曲翘曲，单晶衬底的制造方法，具有使用单层的多层膜的单晶衬底的制造方法 晶体基板以及使用具有多层膜的单晶基板的制造方法的元件制造方法。

公开(公告)号：US20130082358A1

公开(公告)日：2013-04-04

申请号：US13582570

申请日：2011-03-04

申请人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

发明人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

IPC分类号： H01L23/00 ,  H01L21/02

CPC分类号： H01L23/564 ,  C30B29/20 ,  C30B33/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/02686 ,  H01L21/268 ,  H01L29/045 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to correct warpage that occurs in formation of a multilayer film, provided are a single crystal substrate with a multilayer film, a manufacturing method therefor, and an element manufacturing method using the manufacturing method. The single crystal substrate with a multilayer film includes: a single crystal substrate (20); a multilayer film (30) including two or more layers that is formed on one surface of the single crystal substrate (20) and having a compressive stress; and a heat-denatured layer (22) provided, of two regions (20U, 20D) obtained by bisecting the single crystal substrate (20) in the thickness direction thereof, at least in the region (20D) on the side of the surface opposite to the one surface of the single crystal substrate (20) having the multilayer film (30) formed thereon.

摘要翻译： 为了校正在形成多层膜时发生的翘曲，提供了具有多层膜的单晶基板，其制造方法和使用该制造方法的元件制造方法。 具有多层膜的单晶衬底包括：单晶衬底（20）; 包括形成在所述单晶衬底（20）的一个表面上并且具有压应力的两层或更多层的多层膜（30） 和设置在所述单晶衬底（20）的厚度方向上将所述单晶衬底（20）平面分割成两个区域（20U，20D）的热变性层（22）至少在所述表面相对侧的区域（20D）中 到其上形成有多层膜（30）的单晶基板（20）的一个表面。

公开(公告)号：US20130022773A1

公开(公告)日：2013-01-24

申请号：US13639143

申请日：2011-04-06

申请人： Hideo Aida ,  Natsuko Aota

发明人： Hideo Aida ,  Natsuko Aota

IPC分类号： C30B25/02 ,  B32B3/02 ,  B32B3/30

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02658 ,  Y10T428/21 ,  Y10T428/24355

摘要： Provided are a single-crystal substrate for epitaxial growth on which a crystalline film may be formed with stress thereon being suppressed or eliminated, a single-crystal substrate having a crystalline film, a crystalline film, a method of producing a single-crystal substrate having a crystalline film, a method of producing a crystalline substrate, and an element producing method. The single-crystal substrate has a roughened surface formed on at least a partial region of a surface of the single-crystal substrate. And in order to obtain the single-crystal substrate having a crystalline film, a single-crystalline film is formed by epitaxial growth on a roughened-surface unformed surface on which the roughened surface is not formed, and a crystalline film having low crystallinity than the single-crystalline film is formed by epitaxial growth on a roughened-surface formed surface of the single-crystal substrate.

摘要翻译： 提供一种用于外延生长的单晶衬底，其上可以形成具有抑制或消除其应力的结晶膜​​，具有结晶膜的单晶衬底，结晶膜，制造具有 结晶性膜，结晶性基材的制造方法以及元件的制造方法。 单晶衬底在单晶衬底的表面的至少一部分区域上形成粗糙表面。 为了得到具有结晶膜的单晶基板，通过在未形成粗糙面的粗糙面未成形面上进行外延生长，形成单结晶膜，结晶性低于 通过在单晶衬底的粗糙表面形成表面上外延生长形成单晶膜。

公开(公告)号：US20120018732A1

公开(公告)日：2012-01-26

申请号：US13144920

申请日：2009-12-04

申请人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino

发明人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino

IPC分类号： H01L29/06 ,  H01L21/20 ,  H01L21/26

CPC分类号： C30B29/20 ,  C30B25/186 ,  C30B29/403 ,  C30B33/04 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02686

摘要： Sapphire substrates are used chiefly for epitaxial growth of nitride semiconductor layers, to provide a sapphire substrate of which the shape and/or amount of warping can be controlled efficiently and precisely and of which substrate warping that occurs during layer formation can be suppressed and substrate warping behavior can be minimized, to provide nitride semiconductor layer growth bodies, nitride semiconductor devices, and nitride semiconductor bulk substrates using such substrates, and to provide a method of manufacturing these products. Reformed domain patterns are formed within a sapphire substrate and the warp shape and/or amount of warping of the sapphire substrate are controlled by means of multiphoton absorption by condensing and scanning a pulsed laser through a polished surface of the sapphire substrate. When nitride semiconductor layers are formed using sapphire substrates obtained by means of this invention, substrate warping during layer formation is suppressed and substrate warping behavior is minimized so that layer quality and uniformity are improved and the quality and yield of nitride semiconductor devices is increased.

摘要翻译： 蓝宝石衬底主要用于氮化物半导体层的外延生长，以提供蓝宝石衬底，其可以有效和精确地控制翘曲的形状和/或量，并且可以抑制在层形成期间发生的衬底翘曲并且衬底翘曲 可以最小化行为，提供使用这种基板的氮化物半导体层生长体，氮化物半导体器件和氮化物半导体体基板，并提供制造这些产品的方法。 在蓝宝石衬底内形成改质区域图案，通过将脉冲激光通过蓝宝石衬底的抛光表面进行冷凝和扫描，借助多光子吸收来控制蓝宝石衬底的翘曲形状和/或翘曲量。 当使用通过本发明获得的蓝宝石衬底形成氮化物半导体层时，抑制了层形成期间的衬底翘曲，并且使衬底翘曲行为最小化，从而提高了层的质量和均匀性，并且提高了氮化物半导体器件的质量和产率。

公开(公告)号：US20140217458A1

公开(公告)日：2014-08-07

申请号：US14119694

申请日：2012-04-03

申请人： Hideo Aida ,  Natsuko Aota ,  Hidetoshi Takeda ,  Keiji Honjo ,  Hitoshi Hoshino

发明人： Hideo Aida ,  Natsuko Aota ,  Hidetoshi Takeda ,  Keiji Honjo ,  Hitoshi Hoshino

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/382 ,  H01L33/387 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Provided are a method of manufacturing a light-emitting element by which a light-emitting element (80) is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer (40) is formed on one face (32T) of a monocrystalline substrate (30A) for a light-emitting element. Next, the other face (32B) of the monocrystalline substrate (30A) for a light-emitting element is polished until a state where a vertical hole (34A) penetrates the monocrystalline substrate (30A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (34B) from the side of the vertical hole (34B) closer to an opening (36B) in the other face (32B) to form a conductive portion (50) that is continuous from a side closer to the light-emitting element layer (40) to the opening (36B) in the other face (32B).

摘要翻译： 提供了通过以下步骤制造发光元件（80）的发光元件的制造方法以及采用该方法制造的发光元件。 发光元件层（40）形成在用于发光元件的单晶衬底（30A）的一个面（32T）上。 接下来，将用于发光元件的单晶衬底（30A）的另一面（32B）抛光直到垂直孔（34A）在其厚度方向上穿透发光元件的单晶衬底（30A）的状态 成立 接着，从垂直孔（34B）侧的另一面（32B）的开口（36B）的侧面向垂直孔（34B）填充导电性材料，形成导电部（50） 靠近发光元件层（40）的一侧到另一面（32B）中的开口（36B）的一侧。

公开(公告)号：US20130161794A1

公开(公告)日：2013-06-27

申请号：US13582550

申请日：2011-03-04

申请人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

发明人： Hideo Aida ,  Natsuko Aota ,  Hitoshi Hoshino ,  Kenji Furuta ,  Tomosaburo Hamamoto ,  Keiji Honjo

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/06

CPC分类号： C30B33/04 ,  B23K26/0006 ,  B23K26/53 ,  B23K2103/56 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02428 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02686 ,  H01L21/268 ,  H01L31/184 ,  H01L33/007

摘要： Provided are an internally reformed substrate for epitaxial growth having an arbitrary warpage shape and/or an arbitrary warpage amount, an internally reformed substrate with a multilayer film using the internally reformed substrate for epitaxial growth, a semiconductor device, a bulk semiconductor substrate, and manufacturing methods therefor. The internally reformed substrate for epitaxial growth includes: a single crystal substrate; and a heat-denatured layer formed in an internal portion of the single crystal substrate by laser irradiation to the single crystal substrate.

摘要翻译： 提供具有任意翘曲形状和/或任意翘曲量的外延生长的内部重整基板，具有使用用于外延生长的内部重整基板的多层膜的内部重整基板，半导体器件，体半导体基板和制造 方法。 用于外延生长的内部改性衬底包括：单晶衬底; 以及通过激光照射单晶衬底而在单晶衬底的内部形成的热变性层。