Method of setting belt areas in an image to locate bands of biopolymers
    1.
    发明授权
    Method of setting belt areas in an image to locate bands of biopolymers 失效
    设置图像中的带区域以定位生物聚合物带的方法

    公开(公告)号:US5671289A

    公开(公告)日:1997-09-23

    申请号:US452681

    申请日:1995-05-30

    IPC分类号: G01N27/447 G06T7/00 G06K9/00

    CPC分类号: G06T7/004

    摘要: A method for determining the location and density of bands of biopolymers which are formed by developing and resolving a mixture of biopolymers on a supporting medium in one direction to form a lane of plural bands. The method includes the steps of inputting an image of the lane to a computer in the form of digital data comprising information of location and density, displaying the image, and setting a belt area along the lane which encompasses the aimed bands of the biopolymer. The belt area is then scanned a plurality of times in parallel directions crossing the lane with sufficiently small spacing so as to scan every band present within the belt area, in order to detect relationships of location and density on the digital data in the direction of the lane within the belt area. One dimensional data is then prepared to enable a determination of the location and density of the aimed bands.

    摘要翻译: 通过在一个方向上在支撑介质上显影和分解生物聚合物的混合物以形成多条带的通道而形成的生物聚合物条带的位置和密度的确定方法。 该方法包括以数字数据的形式将计算机的图像输入到计算机的步骤,该数字数据包括位置和密度的信息,显示图像,以及沿包含生物聚合物的目标条带的通道设置皮带区域。 然后,皮带区域在平行方向上以足够小的间隔跨过车道扫描多次,以扫描皮带区域中存在的每个频带,以便检测数字数据上的位置和密度在方向上的关系 在皮带区内的车道。 然后准备一维数据以确定目标条带的位置和密度。

    Method and system for last gasp device detection
    5.
    发明授权
    Method and system for last gasp device detection 有权
    最后一个喘气装置检测方法和系统

    公开(公告)号:US09088994B2

    公开(公告)日:2015-07-21

    申请号:US13601692

    申请日:2012-08-31

    IPC分类号: H04W24/00 H04W74/08 H04L29/14

    CPC分类号: H04W74/0841 H04L69/40

    摘要: A method is provided for device detection by a base station comprising receiving a plurality of signals over a preamble subframe from an endpoint. The plurality of signals are attempting to access an access group of the preamble subframe. Additionally, the plurality of signals are received on a random access channel using a wireless network. Further, the plurality of signals have a plurality of last gasp messages (LGMs). The method additionally comprises determining an allowable rate of collisions for the plurality of signals and determining an actual rate of collisions for the plurality of signals. The method includes increasing the size of the access group allocated to the plurality of signals having the plurality of LGMs, based on whether the actual rate of collisions exceeds the allowable rate of collisions.

    摘要翻译: 提供了一种用于由基站进行设备检测的方法,包括:从端点通过前导码子帧接收多个信号。 多个信号正试图访问前同步码子帧的接入组。 另外,使用无线网络在随机接入信道上接收多个信号。 此外,多个信号具有多个最后的喘气信息(LGM)。 该方法还包括确定多个信号的可允许冲突率并确定多个信号的实际碰撞速率。 该方法包括:基于实际的冲突率是否超过允许的冲突率,增加分配给具有多个LGM的多个信号的接入组的大小。

    Field transistor structure manufactured using gate last process
    6.
    发明授权
    Field transistor structure manufactured using gate last process 有权
    使用门最后工艺制造的场晶体管结构

    公开(公告)号:US08841674B2

    公开(公告)日:2014-09-23

    申请号:US13174083

    申请日:2011-06-30

    IPC分类号: H01L29/78 H01L21/28

    CPC分类号: H01L29/7839 G11C17/16

    摘要: According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.

    摘要翻译: 根据本发明的实施例,提供了场晶体管结构。 场晶体管结构包括半导体衬底,金属栅极,多晶硅(多晶硅)层以及第一和第二金属部分。 多晶硅层具有第一,第二,第三和第四边,并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。 多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。 根据本发明的一些实施例,场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。 薄金属层可以电连接到第一和第二金属部分中的每一个。

    LUBRICANT DISTRIBUTION ACQUISITION DEVICE AND LUBRICANT DISTRIBUTION ACQUISITION METHOD
    8.
    发明申请
    LUBRICANT DISTRIBUTION ACQUISITION DEVICE AND LUBRICANT DISTRIBUTION ACQUISITION METHOD 审中-公开
    润滑剂分配获取装置和润滑剂分配获取方法

    公开(公告)号:US20130342685A1

    公开(公告)日:2013-12-26

    申请号:US14002400

    申请日:2012-03-08

    IPC分类号: F16N29/00

    摘要: In this lubricant distribution acquisition device (1), neutron beams that have been transmitted through a bearing (X) are converted into electromagnetic waves, and, by using the received electromagnetic waves to form images based on rotation angle signals that are output from an encoder (5) and show a rotation angle of the bearing, lubrication distribution data that shows the distribution of a lubricant inside the bearing is acquired. As a result, it is possible to make the pitch of the rotation angle uniform in each set of imaging data, and to thereby accurately ascertain the behavior of the lubricant inside the bearing.

    摘要翻译: 在这种润滑剂分配获取装置(1)中,已经通过轴承(X)传输的中子束被转换成电磁波,并且通过使用接收的电磁波基于从编码器输出的旋转角度信号形成图像 (5)并显示轴承的旋转角度,获得显示轴承内部润滑剂分布的润滑分布数据。 结果,可以使每组成像数据中的旋转角度的间距均匀,从而精确地确定轴承内的润滑剂的行为。

    Low mismatch semiconductor device and method for fabricating same
    9.
    发明授权
    Low mismatch semiconductor device and method for fabricating same 有权
    低失配半导体器件及其制造方法

    公开(公告)号:US08610221B2

    公开(公告)日:2013-12-17

    申请号:US12657909

    申请日:2010-01-29

    IPC分类号: H01L27/088

    摘要: Disclosed is a low mismatch semiconductor device that comprises a lightly doped channel region having a first conductivity type and a first dopant concentration in a semiconductor body, and a high-k metal gate stack including a gate metal layer formed over a high-k gate dielectric without having a dielectric cap on the high-k dielectric. The high-k metal gate stack being formed over the lightly doped channel region. The lightly doped channel region may be a P- or N-conductivity region, for example, and may be part of a corresponding P- or N-semiconductor substrate, or a P- or N-well formed in a substrate of the respectively opposite conductivity type. The disclosed semiconductor device, which may be an NMOS or PMOS analog device, for example, can be fabricated as part of an integrated circuit including one or more CMOS logic devices.

    摘要翻译: 公开了一种低失配半导体器件,其包括在半导体本体中具有第一导电类型和第一掺杂剂浓度的轻掺杂沟道区,以及包括形成在高k栅极电介质上的栅极金属层的高k金属栅堆叠 在高k电介质上没有电介质盖。 高k金属栅堆叠形成在轻掺杂沟道区上。 轻掺杂沟道区可以是例如P型或N-导电性区,并且可以是相应的P-或N-半导体衬底的一部分,也可以是在相对的相对的衬底中形成的P-阱或N阱 导电类型。 所公开的半导体器件(其可以是例如NMOS或PMOS模拟器件)可以被制造为包括一个或多个CMOS逻辑器件的集成电路的一部分。

    Radio communication method in radio communication system, terminal apparatus, base station apparatus, and radio communication system
    10.
    发明授权
    Radio communication method in radio communication system, terminal apparatus, base station apparatus, and radio communication system 失效
    无线通信系统中的无线通信方法,终端装置,基站装置和无线通信系统

    公开(公告)号:US08600313B2

    公开(公告)日:2013-12-03

    申请号:US12893186

    申请日:2010-09-29

    申请人: Akira Ito

    发明人: Akira Ito

    IPC分类号: H04B1/04

    摘要: A radio communication method in a radio communication system which performs radio communication between a terminal apparatus and a base station apparatus, the radio communication method including: selecting one of a first transmission method or a second transmission method on the basis of transmission power of transmission signal transmitted from the terminal apparatus, in the base station apparatus; and transmitting the transmission signal to the base station apparatus by the selected first or second transmission method, in the terminal apparatus.

    摘要翻译: 一种在终端装置与基站装置之间进行无线通信的无线通信系统中的无线通信方法,所述无线通信方法包括:基于发送信号的发送功率,选择第一发送方式或第二发送方式 在所述基站装置中从所述终端装置发送; 并且在所述终端装置中通过所选择的第一或第二传输方法将所述发送信号发送到所述基站装置。