公开(公告)号：US09472376B2

公开(公告)日：2016-10-18

申请号：US14379715

申请日：2013-02-18

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Toshiyuki Yokosuka ,  Chahn Lee ,  Hideyuki Kazumi ,  Hiroshi Makino ,  Yuzuru Mizuhara ,  Miki Isawa ,  Michio Hatano ,  Yoshinori Momonoi

IPC: H01J37/28 ,  G01B15/00 ,  G01B15/04

CPC classification number: H01J37/28 ,  G01B15/00 ,  G01B15/04 ,  H01J2237/0048 ,  H01J2237/0492 ,  H01J2237/24495 ,  H01J2237/281 ,  H01J2237/2815 ,  H01J2237/2817

Abstract: An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.

Abstract translation: 本发明的目的是提供一种形成电场的扫描电子显微镜，即使样品表面是导电材料，也能高效地提高从孔底等排出的电子。 为了实现上述目的，根据本发明，提出了一种扫描电子显微镜，其包括使电子束的扫描位置偏转的偏转器和用于在其上装载样品的样品台。 扫描电子显微镜包括控制装置，其以这样的方式控制偏转器或样品台，即在测量目标图案上扫描光束之前，位于测量对象图案的下层中的下层图案在另一个上进行光束照射 图案位于下层。

公开(公告)号：US20150277237A1

公开(公告)日：2015-10-01

申请号：US14441768

申请日：2013-11-14

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takumichi Sutani ,  Miki Isawa ,  Shunsuke Koshihara ,  Akiyuki Sugiyama

IPC: G03F7/20

CPC classification number: G03F7/70491 ,  B82Y40/00 ,  H01L21/0337

Abstract: An image processor, a method for generating a pattern using self-organizing lithographic techniques, and a computer program are provided to achieve image processing suitable for addressing a sample generated by patterning using Directed Self-Assembly (DSA), and the processor, method, and computer program are characterized in that a template for addressing is prepared on the basis of guide pattern data used for patterning by DSA. The above configuration makes it possible to provide an addressing pattern suitable for visual field positioning in measuring or inspecting a pattern formed through the patterning process using DSA.

Abstract translation: 提供图像处理器，使用自组织光刻技术产生图案的方法和计算机程序，以实现适合于寻址通过使用定向自组装（DSA）的图案生成的样本的图像处理，以及处理器， 和计算机程序的特征在于，基于用于通过DSA进行图案化的引导图案数据来准备用于寻址的模板。 上述配置使得可以提供适于视场定位的寻址图案，以测量或检查通过使用DSA的图案化工艺形成的图案。

公开(公告)号：US08648300B2

公开(公告)日：2014-02-11

申请号：US13939767

申请日：2013-07-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Miki Isawa ,  Minoru Yamazaki ,  Yuzuru Mizuhara ,  Hiroshi Makino ,  Hideyuki Kazumi

IPC: G01N23/00 ,  G21K7/00

CPC classification number: G01N23/2258 ,  G01B2210/56 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/1508 ,  H01J2237/2448 ,  H01J2237/281 ,  H01J2237/2816

Abstract: The charged particle beam apparatus having an opening formation member formed with an opening for passage of a charged particle beam emitted from a charged particle source, and either a detector adapted to detect charged particles having passed through the passage opening or a detector adapted to detect charged particles resulting from bombardment on another member of the charged particles having passed through the opening, comprises an aligner for aligning charged particles discharged from the sample and a control unit for controlling the aligner, wherein the control unit controls the aligner to cause it to shift trajectories of the charged particles discharged from the sample so that length measurement may be executed on the basis of detection signals before and after the alignment by the aligner.

Abstract translation: 带电粒子束装置具有开口形成构件，该开口形成构件形成有用于通过从带电粒子源发射的带电粒子束的开口，以及适于检测通过通道开口的带电粒子的检测器或适于检测带电粒子的检测器 通过对通过开口的带电粒子的另一个部件进行轰击而产生的粒子包括用于对准从样品排出的带电粒子的对准器和用于控制对准器的控制单元，其中控制单元控制对准器使其移动轨迹 从样品排出的带电粒子可以根据校准器对准前后的检测信号进行长度测量。

公开(公告)号：US10732512B2

公开(公告)日：2020-08-04

申请号：US15903536

申请日：2018-02-23

Applicant: Hitachi High-Technologies Corporation

Inventor： Takumichi Sutani ,  Miki Isawa ,  Shunsuke Koshihara ,  Akiyuki Sugiyama

IPC: G06K9/00 ,  G03F7/20 ,  B82Y40/00 ,  H01L21/033

Abstract: An image processor, a method for generating a pattern using self-organizing lithographic techniques, and a computer program are provided to achieve image processing suitable for addressing a sample generated by patterning using Directed Self-Assembly (DSA), and the processor, method, and computer program are characterized in that a template for addressing is prepared on the basis of guide pattern data used for patterning by DSA. The above configuration makes it possible to provide an addressing pattern suitable for visual field positioning in measuring or inspecting a pattern formed through the patterning process using DSA.

公开(公告)号：US09831062B2

公开(公告)日：2017-11-28

申请号：US14760322

申请日：2014-01-22

Applicant: Hitachi High-Technologies Corporation

Inventor： Makoto Suzuki ,  Satoru Yamaguchi ,  Kei Sakai ,  Miki Isawa ,  Satoshi Takada ,  Kazuhisa Hasumi ,  Masami Ikota

IPC: H01J37/30 ,  H01J37/28

CPC classification number: H01J37/30 ,  H01J37/28 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/3175

Abstract: An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.

公开(公告)号：US09502212B2

公开(公告)日：2016-11-22

申请号：US14760259

申请日：2014-01-22

Applicant: Hitachi High-Technologies Corporation

Inventor： Yuzuru Mizuhara ,  Miki Isawa ,  Minoru Yamazaki ,  Hitoshi Tamura ,  Hideyuki Kazumi

IPC: H01J37/26 ,  H01J37/147 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/268 ,  H01J37/1472 ,  H01J37/244 ,  H01J37/265 ,  H01J37/266 ,  H01J37/28 ,  H01J37/3178 ,  H01J2237/24564 ,  H01J2237/28 ,  H01J2237/2809

Abstract: An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams (2(a), 2(b)) emitted from a sample (23) are deflected by a charged particle deflector (33) in a state in which the sample (23) is irradiated with a charged particle beam (1), and information regarding a sample potential is detected by using a signal obtained at that time.

Abstract translation: 本发明的目的是提供一种能够通过使用带电粒子束来测量样品表面的电位或检测由于样品充电而发生变化的装置状态的变化的补偿值的方法和装置， 通过测量由带电粒子束的照射引起的样品电位。 为了实现该目的，提供了一种方法和装置，其中从样品（23）发射的带电粒子束（2（a），2（b））由带电粒子偏转器（33）在某种状态下偏转 其中样品（23）被带电粒子束（1）照射，并且通过使用当时获得的信号来检测关于样品电位的信息。

公开(公告)号：US10854420B2

公开(公告)日：2020-12-01

申请号：US16310830

申请日：2016-07-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miki Isawa ,  Ayumi Doi ,  Kazuhisa Hasumi

IPC: H01J37/28 ,  H01J37/22 ,  G01N23/2251 ,  G06T7/00

Abstract: A pattern evaluation device has measurement or inspection conditions, supplied for the measurement and inspection of a replica produced by transferring a pattern for a semiconductor wafer or the like, which can be easily set, and with which recipes can be easily generated, when measurement and inspection conditions for the semiconductor wafer or the like and recipes in which these conditions are stored have been prepared in advance. The pattern evaluation device in which a pattern formed on the semiconductor wafer is evaluated on the basis of image data or signal waveforms obtained on the basis of beam irradiation or probe scanning of the semiconductor wafer, wherein the device conditions for evaluating the semiconductor wafer are converted to device conditions for evaluating a replica obtained by transferring a part of a pattern of the semiconductor wafer, and the converted device conditions are used to evaluate the replica.

公开(公告)号：US09589343B2

公开(公告)日：2017-03-07

申请号：US14422603

申请日：2013-08-02

Applicant: Hitachi High-Technologies Corporation

Inventor： Miki Isawa ,  Kei Sakai ,  Norio Hasegawa

IPC: G06K9/00 ,  G21K5/00 ,  H01L21/31 ,  G06T7/00 ,  G01B15/00 ,  G01B15/04 ,  G06T7/60 ,  G01N23/225 ,  G06K9/46 ,  G06K9/52 ,  G06K9/62

CPC classification number: G06T7/001 ,  G01B15/00 ,  G01B15/04 ,  G01N23/2251 ,  G01N2223/418 ,  G01N2223/623 ,  G06K9/46 ,  G06K9/52 ,  G06K9/6201 ,  G06K2009/4666 ,  G06K2009/6213 ,  G06T7/0004 ,  G06T7/60

Abstract: The purpose of the present invention is to provide a pattern measurement device which evaluates quantitatively and with high precision random patterns such as finger print patterns. In order to fulfill this purpose, a pattern measurement device which measures the pattern on a sample on the basis of an image acquired by a charged particle beam is proposed which selectively extracts linear or linearly approximable parts of the pattern on the sample, and outputs at least one of the following: the measurement of the distance between the extracted parts, the ratio of said extracted parts in a prescribed region, and the length of said extracted parts. Further, as a more specific embodiment, a pattern measurement device is proposed which calculates a frequency depending on a distance value between extracted parts, and outputs, as a pattern distance, distance values for which said frequency fulfills a prescribed condition.

Abstract translation: 本发明的目的是提供一种图形测量装置，其定量地和高精度的随机图案如指纹图案进行评估。 为了实现这一目的，提出了一种基于通过带电粒子束获取的图像来测量样本上的图案的图案测量装置，其选择性地提取样本上的图案的线性或线性近似部分，并且在 以下中的至少一个：所提取的部分之间的距离的测量，所述提取的部分在规定的区域中的比率与所述提取的部分的长度。 此外，作为更具体的实施例，提出了一种图案测量装置，其根据提取部分之间的距离值来计算频率，并且作为图案距离输出所述频率满足规定条件的距离值。

公开(公告)号：US20150243008A1

公开(公告)日：2015-08-27

申请号：US14422603

申请日：2013-08-02

Applicant: Hitachi High-Technologies Corporation

Inventor： Miki Isawa ,  Kei Sakai ,  Norio Hasegawa

IPC: G06T7/00 ,  G06K9/46 ,  G06K9/52 ,  G06K9/62

CPC classification number: G06T7/001 ,  G01B15/00 ,  G01B15/04 ,  G01N23/2251 ,  G01N2223/418 ,  G01N2223/623 ,  G06K9/46 ,  G06K9/52 ,  G06K9/6201 ,  G06K2009/4666 ,  G06K2009/6213 ,  G06T7/0004 ,  G06T7/60

Abstract: The purpose of the present invention is to provide a pattern measurement device which evaluates quantitatively and with high precision random patterns such as finger print patterns. In order to fulfill this purpose, a pattern measurement device which measures the pattern on a sample on the basis of an image acquired by a charged particle beam is proposed which selectively extracts linear or linearly approximable parts of the pattern on the sample, and outputs at least one of the following: the measurement of the distance between the extracted parts, the ratio of said extracted parts in a prescribed region, and the length of said extracted parts. Further, as a more specific embodiment, a pattern measurement device is proposed which calculates a frequency depending on a distance value between extracted parts, and outputs, as a pattern distance, distance values for which said frequency fulfills a prescribed condition.

Abstract translation: 本发明的目的是提供一种图形测量装置，其定量地和高精度的随机图案如指纹图案进行评估。 为了实现这一目的，提出了一种基于通过带电粒子束获取的图像来测量样本上的图案的图案测量装置，其选择性地提取样本上的图案的线性或线性近似部分，并且在 以下中的至少一个：所提取的部分之间的距离的测量，所述提取的部分在规定的区域中的比率与所述提取的部分的长度。 此外，作为更具体的实施例，提出了一种图案测量装置，其根据提取部分之间的距离值来计算频率，并且作为图案距离输出所述频率满足规定条件的距离值。

公开(公告)号：US10545018B2

公开(公告)日：2020-01-28

申请号：US15104574

申请日：2014-11-17

Applicant: Hitachi High-Technologies Corporation

Inventor： Satoru Yamaguchi ,  Norio Hasegawa ,  Akiyuki Sugiyama ,  Miki Isawa ,  Akihiro Onizawa ,  Ryuji Mitsuhashi

IPC: G01B15/00 ,  H01L21/66 ,  H01J37/28 ,  H01L21/033

Abstract: The purpose of the present invention is to provide a pattern measurement device which adequately evaluates a pattern formed by means of a patterning method for forming a pattern that is not in a photomask. In order to fulfil the purpose, the present invention suggests a pattern measurement device provided with a computation device for measuring the dimensions between patterns formed on a sample, wherein: the centroid of the pattern formed on the sample is extracted from data to be measured obtained by irradiating beams; a position alignment process is executed between the extracted centroid and measurement reference data in which a reference functioning as the measurement start point or measurement end point is set; and the dimensions between the measurement start point or the measurement end point of the measurement reference data, which was subjected to position alignment, and the edge or the centroid of the pattern contained in the data to be measured is measured.