公开(公告)号：US09177575B1

公开(公告)日：2015-11-03

申请号：US14561265

申请日：2014-12-05

Applicant: HGST Netherlands B.V.

Inventor： Zheng Gao ,  Sangmun Oh ,  Susumu Okamura

IPC: G11B5/39

CPC classification number: G11B5/3912 ,  G01R33/098 ,  G11B5/3909 ,  H01L43/08 ,  H01L43/10

Abstract: A tunneling magnetoresistive (TMR) read head has a read gap with a reduced thickness. A multilayer seed layer includes a first ferromagnetic seed layer on the lower shield, a ferromagnetic NiFe alloy on the first seed layer, and a third seed layer of Ru or Pt on the NiFe seed layer. The first and NiFe seed layers are magnetically part of the lower shield, thereby effectively reducing the read gap thickness. A free layer/capping layer structure includes a multilayer ferromagnetic free layer and a Hf capping layer on the free layer. The free layer includes a B-containing upper layer in contact with the Hf capping layer prior to annealing. When the sensor is annealed Hf diffuses into the B-containing upper layer, forming an interface layer. The Hf-containing interface layer possesses negative magnetostriction, so the free layer is not required to contain NiFe.

Abstract translation: 隧道磁阻（TMR）读头具有减小厚度的读取间隙。 多层种子层包括下屏蔽上的第一铁磁种子层，第一籽晶层上的铁磁性NiFe合金，以及NiFe种子层上的Ru或Pt的第三晶种层。 第一和NiFe种子层是下屏蔽的磁性部分，从而有效地减小读取间隙厚度。 自由层/覆盖层结构包括多层铁磁自由层和自由层上的Hf覆盖层。 自由层包括在退火之前与Hf覆盖层接触的含B的上层。 当传感器退火时，Hf扩散到含B的上层中，形成界面层。 含Hf的界面层具有负的磁致伸缩，因此自由层不需要含有NiFe。

公开(公告)号：US09030785B2

公开(公告)日：2015-05-12

申请号：US13923624

申请日：2013-06-21

Applicant: HGST Netherlands B.V.

Inventor： James Mac Freitag ,  Zheng Gao

IPC: G11B5/39 ,  G11B5/31

CPC classification number: G11B5/3143 ,  G11B5/3906 ,  G11B5/398 ,  Y10T428/11 ,  Y10T428/115 ,  Y10T428/1193

Abstract: The embodiments of the present invention relate to a magnetic read head with pinned layers extending to the ABS of the read head and in contact with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. The recessed antiferromagnetic layer may be disposed above or below the pinned layer structure and provides a pinning field to prevent amplitude flipping in head operation. In these embodiments of the present invention, the read gap of the sensor, that is the distance between the highly permeable, magnetically soft upper and lower shield layers at the ABS, is reduced by the thickness of the antiferromagnetic layer.

Abstract translation: 本发明的实施例涉及一种具有延伸到读取头的ABS并且与相对于读取头的ABS凹陷的反铁磁层接触的固定层的磁读头。 凹陷的反铁磁层可以设置在被钉扎层结构的上方或下方，并提供钉扎场以防止头部操作中的振幅翻转。 在本发明的这些实施例中，传感器的读取间隙，即在ABS处的高度可渗透的，软的软的上下屏蔽层之间的距离减小了反铁磁性层的厚度。

公开(公告)号：US20170154643A1

公开(公告)日：2017-06-01

申请号：US14956251

申请日：2015-12-01

Applicant: HGST Netherlands B.V.

Inventor： Kouichi Nishioka ,  Zheng Gao ,  Ching Tsang ,  Quang Le ,  Sangmun Oh

IPC: G11B5/39

CPC classification number: G11B5/3912 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3945 ,  G11B2005/3996

Abstract: A read head is provided with a scissors sensor. The read head may include a bottom magnetic shield, and a first non-magnetic seed layer, a magnetic seed layer, a second non-magnetic seed layer, an antiferromagnetic layer, a coupling layer, a first free magnetic layer, a spacer layer, and a second free magnetic layer positioned above the bottom magnetic shield, in this order. A pair of magnetic side shield layers may be positioned on respective sides of the second free magnetic layer.

公开(公告)号：US09099120B1

公开(公告)日：2015-08-04

申请号：US14248970

申请日：2014-04-09

Applicant: HGST Netherlands B.V.

Inventor： James Mac Freitag ,  Zheng Gao

IPC: G11B5/39

CPC classification number: G11B5/39 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3932 ,  H01L43/08

Abstract: The embodiments generally relate to a read head in a magnetic recording head. The read head utilizes a sensor structure having a pinned magnetic structure with a magnetic field, a barrier layer disposed on top of the pinned magnetic structure, a free layer disposed on top of the barrier layer, and an interlayer coupling field canceling layer disposed on top of the free layer. The interlayer coupling field canceling layer has a cancelling magnetic field pinned anti-parallel the magnetic field of the pinned magnetic structure.

Abstract translation: 实施例一般涉及磁记录头中的读头。 读头使用具有磁场的钉扎磁结构的传感器结构，设置在钉扎磁性结构顶部的阻挡层，设置在阻挡层顶部的自由层和设置在顶部上的层间耦合场消除层 的自由层。 层间耦合场消除层具有消除磁场，与固定磁结构的磁场反并联。

公开(公告)号：US09053721B1

公开(公告)日：2015-06-09

申请号：US14292760

申请日：2014-05-30

Applicant: HGST Netherlands B.V.

Inventor： Yongchul Ahn ,  David P. Druist ,  Zheng Gao ,  Ying Hong ,  Yunhe Huang ,  Quang Le ,  Thomas L. Leong ,  Guangli Liu ,  Xiaoyong Liu ,  David J. Seagle

IPC: G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC classification number: G11B5/398 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996

Abstract: A magnetic read sensor having a magnetic seed layer, a pinned layer structure formed over the magnetic seed layer, a non-magnetic barrier or spacer layer formed over the pinned layer structure and a magnetic free layer structure formed over the non-magnetic barrier or spacer layer. The pinned layer has a stripe height (measured from the media facing surface) that is greater than a stripe height of the magnetic free layer structure. In addition, the magnetic seed layer structure has a stripe height (also measured from the media facing surface) that is greater than the stripe height of the magnetic pinned layer structure and the magnetic free layer structure. The stripe height of the magnetic seed layer structure can be controlled independently of the stripe heights of the magnetic pinned layer structure and the magnetic free layer structure.

Abstract translation: 具有磁性种子层的磁性读取传感器，形成在磁性种子层上的钉扎层结构，形成在被钉扎层结构之上的非磁性阻挡层或间隔层以及形成在非磁性屏障或间隔物上的无磁性层结构 层。 被钉扎层具有大于无磁性层结构的条带高度的条带高度（从介质面向表面测量）。 此外，磁性种子层结构具有大于磁性被钉扎层结构和无磁性层结构的条带高度的条纹高度（也从介质面向表面测量）。 可以独立于磁性钉扎层结构和无磁性层结构的条带高度来控制磁性种子层结构的条纹高度。

公开(公告)号：US09001473B1

公开(公告)日：2015-04-07

申请号：US14221375

申请日：2014-03-21

Applicant: HGST Netherlands B.V.

Inventor： Zheng Gao ,  James Mac Freitag ,  Kuok San Ho ,  Ching Hwa Tsang ,  Kochan Ju

IPC: G11B5/127 ,  G11B5/39

CPC classification number: G11B5/3945 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3954 ,  G11B5/398

Abstract: The embodiments disclosed generally relate to a read head in a magnetic recording head. The read head utilizes a sensor structure having: a pinned magnetic structure recessed from a media facing surface; and a reader gap structure. The reader gap structure has a spacer layer recessed from the media facing surface and disposed on top of the pinned magnetic structure, a recessed first free layer partially recessed from the media facing surface and disposed on top of the barrier layer, a second free layer extending to the media facing surface an disposed on top of the barrier layer, and a cap layer extending to the media facing surface disposed atop the second free layer. The pinned magnetic structure, the spacer, and the first free layer have a common face which is on an angle relative to the media facing surface.

Abstract translation: 所公开的实施例一般涉及磁记录头中的读头。 读头利用传感器结构，其具有：从介质面向表面凹陷的固定磁性结构; 和读者差距结构。 读取器间隙结构具有从介质相对表面凹陷并且设置在钉扎磁性结构的顶部上的间隔层，从介质相对表面部分地凹陷并设置在阻挡层的顶部上的凹陷的第一自由层，第二自由层延伸 到位于所述阻挡层顶部上的面向介质的表面，以及延伸到设置在所述第二自由层顶部上的介质对向表面的盖层。 钉扎磁性结构，间隔物和第一自由层具有相对于介质相对表面成一角度的公共面。

公开(公告)号：US08873204B1

公开(公告)日：2014-10-28

申请号：US14341485

申请日：2014-07-25

Applicant: HGST Netherlands B.V.

Inventor： Zheng Gao ,  Stefan Maat ,  Alexander M. Zeltser

IPC: G11B5/39

CPC classification number: G11B5/3977 ,  G11B5/3912

Abstract: A two-dimensional magnetic recording (TDMR) read head structure has the lower read sensor free layer magnetization biased by side shields of soft magnetic material. A center shield between the lower and upper sensors is an antiparallel coupled magnetic structure, i.e., first and second ferromagnetic layers separated by an antiparallel coupling (APC) layer. The first ferromagnetic layer is ferromagnetically exchange coupled to the side shields of the lower sensor to stabilize the magnetization of the lower sensor's free layer. The first ferromagnetic layer of the center shield is a multilayer of a lower NiFe layer and an upper CoFeB alloy layer inserted below the APC layer. The CoFeB alloy insertion layer increases the antiparallel coupling of the first and second ferromagnetic layers of the center shield after two orthogonal anneals so that the magnetization of the first ferromagnetic layer is aligned parallel to the air-bearing surface (ABS) of the TDMR structure.

Abstract translation: 二维磁记录（TDMR）读头结构具有由软磁性材料的侧屏蔽偏置的较低读取传感器自由层的磁化强度。 下传感器和上传感器之间的中心屏蔽是反平行耦合磁结构，即由反平行耦合（APC）层隔开的第一和第二铁磁层。 第一铁磁层被铁磁交换耦合到下传感器的侧屏蔽以稳定下传感器自由层的磁化。 中心屏蔽的第一铁磁层是下层NiFe层和插入在APC层下面的上CoFeB合金层的多层。 CoFeB合金插入层在两个正交退火之后增加中心屏蔽的第一和第二铁磁层的反平行耦合，使得第一铁磁层的磁化平行于TDMR结构的空气轴承表面（ABS）排列。

公开(公告)号：US09831419B2

公开(公告)日：2017-11-28

申请号：US14797759

申请日：2015-07-13

Applicant: HGST Netherlands B.V.

Inventor： James Freitag ,  Zheng Gao

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L27/222 ,  G11B5/3906 ,  G11B5/3948 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magneto-resistive (MR) device and process for making the MR device are disclosed. The MR device has a pinned layer, a spacer layer proximate to the pinned layer, and a free layer proximate to the spacer layer. The free layer comprises a first magnetic layer proximate to the spacer layer, the first magnetic layer having a positive magnetostriction, a laminate magnetic insertion layer proximate to the first magnetic layer, and a second magnetic layer proximate to the magnetic insertion layer, the second magnetic layer having a negative magnetostriction. The laminate magnetic insertion layer has a first magnetic sublayer and a first non-magnetic sublayer proximate to the first magnetic sublayer. With the disclosed laminate magnetic insertion layer, the free layer has a low overall magnetostriction and results in a MR device with a high MR ratio.

公开(公告)号：US09349391B2

公开(公告)日：2016-05-24

申请号：US14097192

申请日：2013-12-04

Applicant: HGST Netherlands B.V.

Inventor： James M. Freitag ,  Zheng Gao

IPC: G11B5/127 ,  G01R33/09 ,  G11B5/39

CPC classification number: G11B5/127 ,  G01R33/093 ,  G01R33/098 ,  G11B5/1272 ,  G11B5/1276 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  Y10T428/11 ,  Y10T428/115

Abstract: In one general embodiment, a system includes a magnetic layer having first and second magnetic sublayers. An anisotropy of the first magnetic sublayer is oriented in a different direction than an anisotropy of the second magnetic sublayer. In another general embodiment, a magnetic head includes a magnetic layer having first and second magnetic sublayers directly adjacent one another. A deposition thickness of the magnetic layer is less than 60 angstroms. An interface between the magnetic sublayers is oriented at an angle of greater than 2 degrees and less than 88 degrees relative to a plane of deposition thereof. The magnetic layer includes at least one material selected from a group consisting of Co, Fe, Ni, CoFe, CoFeB, CoHf and NiFe.

Abstract translation: 在一个一般实施例中，系统包括具有第一和第二磁性子层的磁性层。 第一磁性子层的各向异性被定向在与第二磁性子层的各向异性不同的方向上。 在另一个通用实施例中，磁头包括具有彼此直接相邻的第一和第二磁性子层的磁性层。 磁性层的沉积厚度小于60埃。 磁性子层之间的界面相对于其沉积平面定向成大于2度且小于88度的角度。 磁性层包括选自Co，Fe，Ni，CoFe，CoFeB，CoHf和NiFe中的至少一种材料。

公开(公告)号：US09318133B2

公开(公告)日：2016-04-19

申请号：US14139762

申请日：2013-12-23

Applicant: HGST Netherlands B.V.

Inventor： James M. Freitag ,  Zheng Gao ,  Chando Park

IPC: G11B5/39 ,  G11B5/31

CPC classification number: G11B5/3909 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T428/1193

Abstract: In one general embodiment, a device includes an antiferromagnetic layer; a first stitch layer exchange coupled with the antiferromagnetic layer, the first stitch layer having a magnetic orientation substantially parallel to a magnetic orientation of the antiferromagnetic layer; a second stitch layer exchange coupled with the first stitch layer and having a magnetic orientation substantially antiparallel to the magnetic orientation of the first stitch layer; a pinned layer structure exchange coupled with the second stitch layer; a free layer; and a spacer layer between the free layer and the pinned layer structure. An end of the antiferromagnetic layer facing a sensing face of the device is recessed from the sensing face.

Abstract translation: 在一个一般实施例中，装置包括反铁磁层; 与所述反铁磁层耦合的第一缝合层交换，所述第一线迹层具有基本上平行于所述反铁磁层的磁取向的磁取向; 与所述第一缝合层耦合并且具有与所述第一缝合层的磁取向基本上反平行的磁取向的第二缝合层交换; 与第二针迹层耦合的被钉扎层结构交换; 自由层 以及在自由层和钉扎层结构之间的间隔层。 面向装置的感测面的反铁磁性层的端部从感测面凹入。