Invention Grant
US08873204B1 Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and center shield with CoFeB insertion layer
有权
具有多个堆叠传感器的电流垂直平面（CPP）磁阻（MR）传感器结构和具有CoFeB插入层的中心屏蔽
- Patent Title: Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and center shield with CoFeB insertion layer
- Patent Title (中): 具有多个堆叠传感器的电流垂直平面（CPP）磁阻（MR）传感器结构和具有CoFeB插入层的中心屏蔽
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Application No.: US14341485Application Date: 2014-07-25
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Publication No.: US08873204B1Publication Date: 2014-10-28
- Inventor: Zheng Gao , Stefan Maat , Alexander M. Zeltser
- Applicant: HGST Netherlands B.V.
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agent Thomas R. Berthold
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A two-dimensional magnetic recording (TDMR) read head structure has the lower read sensor free layer magnetization biased by side shields of soft magnetic material. A center shield between the lower and upper sensors is an antiparallel coupled magnetic structure, i.e., first and second ferromagnetic layers separated by an antiparallel coupling (APC) layer. The first ferromagnetic layer is ferromagnetically exchange coupled to the side shields of the lower sensor to stabilize the magnetization of the lower sensor's free layer. The first ferromagnetic layer of the center shield is a multilayer of a lower NiFe layer and an upper CoFeB alloy layer inserted below the APC layer. The CoFeB alloy insertion layer increases the antiparallel coupling of the first and second ferromagnetic layers of the center shield after two orthogonal anneals so that the magnetization of the first ferromagnetic layer is aligned parallel to the air-bearing surface (ABS) of the TDMR structure.
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