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    Magnetic reader sensor with shield spacing improvement and better pin flop robustness
    1.
    发明授权
    Magnetic reader sensor with shield spacing improvement and better pin flop robustness 有权

    公开(公告)号：US09799357B1

    公开(公告)日：2017-10-24

    申请号：US15345813

    申请日：2016-11-08

    Applicant: Headway Technologies, Inc.

    Inventor： Ruhang Ding ,  Yewhee Chye ,  Wenyu Chen ,  Kunliang Zhang ,  Min Li

    IPC: G11B5/39

    CPC classification number: G11B5/3912 ,  G11B5/3932 ,  G11B5/398

    Abstract: A MR sensor is disclosed with an antiferromagnetic (AFM) layer recessed behind a bottom shield to reduce reader shield spacing and improve pin related noise. Above the AFM layer is an AP2/AFM coupling layer/AP1 stack that extends from an air bearing surface to the MR sensor backside. The AP2 layer is pinned by the AFM layer, and the AP1 layer serves as a reference layer to an overlying free layer during a read operation. The AP1 and AP2 layers have improved resistance to magnetization flipping because back portions thereof have a full cross-track width “w” between MR sensor sides thereby enabling greater pinning strength from the AFM layer. Front portions of the AP1/AP2 layers lie under the free layer and have a track width less than “w”. The bottom shield may have an anti-ferromagnetic coupling structure. A process flow is provided for fabricating the MR sensor.

    Reader sensor structure and its method of construction
    2.
    发明授权
    Reader sensor structure and its method of construction 有权
    读卡器传感器结构及其施工方法

    公开(公告)号：US09337414B2

    公开(公告)日：2016-05-10

    申请号：US13803362

    申请日：2013-03-14

    Applicant: Headway Technologies, Inc.

    Inventor： Min Li ,  Ruhang Ding ,  Cherng Chyi Han ,  Jianing Zhou ,  Minghui Yu

    IPC: G11B5/33 ,  H01L43/10 ,  H01L43/00 ,  H01L29/82 ,  G11B5/127 ,  H01L29/96 ,  H01L21/8246 ,  H01L43/08 ,  H01L43/12 ,  G11B5/39 ,  H01L43/02 ,  G11B5/31 ,  G01R33/09

    CPC classification number: H01L43/08 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/398 ,  G11B5/3983 ,  H01L43/02 ,  H01L43/12

    Abstract: A TMR (tunneling magnetoresistive) read sensor is formed in which a portion of the sensor stack containing the ferromagnetic free layer and the tunneling barrier layer is patterned to define a narrow trackwidth, but a synthetic antiferromagnetic pinning/pinned layer is left substantially unpatterned and extends in substantially as-deposited form beyond the lateral edges bounding the patterned portion. The narrow trackwidth of the patterned portion permits high resolution for densely recorded data. The larger pinning/pinned layer significantly improves magnetic stability and reduces thermal noise, while the method of formation eliminates possible ion beam etch (IBE) or reactive ion etch (RIE) damage to the edges of the pinning/pinned layer.

    Abstract translation: 形成TMR（隧道磁阻）读取传感器，其中包含铁磁自由层和隧道势垒层的传感器堆叠的一部分被图案化以限定窄的轨道宽度，但是合成的反铁磁性钉扎/钉扎层基本上未被图案化地延伸 在基本上沉积的形式中超过限定图案化部分的横向边缘。 图案部分的窄轨道宽度允许高密度记录数据的分辨率。 较大的钉扎/钉扎层显着提高了磁稳定性并降低了热噪声，而形成方法消除了对钉扎/钉扎层边缘的可能的离子束蚀刻（IBE）或反应离子蚀刻（RIE）损伤。

    Magnetic reader sensor with shield spacing improvement and better pin flip robustness
    4.
    发明授权
    Magnetic reader sensor with shield spacing improvement and better pin flip robustness 有权

    公开(公告)号：US10157634B2

    公开(公告)日：2018-12-18

    申请号：US15790342

    申请日：2017-10-23

    Applicant: Headway Technologies, Inc.

    Inventor： Ruhang Ding ,  Yewhee Chye ,  Wenyu Chen ,  Kunliang Zhang ,  Yan Wu ,  Min Li

    IPC: G11B5/39

    Abstract: A process flow is disclosed for forming a MR sensor having an antiferromagnetic (AFM) layer recessed behind a bottom shield to reduce reader shield spacing and improve pin related noise. An AP2/AFM coupling layer/AP1 stack that extends from an air bearing surface to the MR sensor backside is formed above the AFM layer. The AP2 layer is pinned by the AFM layer, and the AP1 layer serves as a reference layer to an overlying free layer during a read operation. The AP1 and AP2 layers have improved resistance to magnetization flipping because back portions thereof have a full cross-track width “w” between MR sensor sides thereby enabling greater pinning strength from the AFM layer. Front portions of the AP1/AP2 layers lie under the free layer and have a track width less than “w”. The bottom shield may have an anti-ferromagnetic coupling structure.

    Reader designs of shield to shield spacing improvement
    8.
    发明授权
    Reader designs of shield to shield spacing improvement 有权
    读卡器设计的屏蔽间隔改善

    公开(公告)号：US09437225B2

    公开(公告)日：2016-09-06

    申请号：US14445167

    申请日：2014-07-29

    Applicant: Headway Technologies, Inc.

    Inventor： Junjie Quan ,  Kunliang Zhang ,  Min Li ,  Ruhang Ding ,  Yewhee Chye ,  Glen Garfunkel ,  Wenyu Chen

    IPC: G11B5/127 ,  G11B5/39

    CPC classification number: G11B5/3912 ,  G11B5/127 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996

    Abstract: A MR sensor is disclosed with an antiferromagnetic (AFM) layer recessed behind a first stack of layers including a free layer and non-magnetic spacer to reduce reader shield spacing and enable increased areal density. The AFM layer may be formed on a first pinned layer in the first stack that is partially embedded in a second pinned layer having a front portion at an air bearing surface (ABS) to improve pinning strength and avoid a morphology effect. In another embodiment, the AFM layer is embedded in a bottom shield and surrounds the sidewalls and back side of an overlying free layer in the sensor stack to reduce reader shield spacing. Pinning strength is improved because of increased contact between the AFM layer and a pinned layer. The free layer is aligned above a bottom shield center section.

    Abstract translation: 公开了一种MR传感器，其具有在包括自由层和非磁性间隔物的第一层叠层之后凹入的反铁磁（AFM）层，以减少读取器屏蔽间隔并且实现增加的面密度。 AFM层可以形成在第一堆叠中的第一被钉扎层上，其部分地嵌入在空气轴承表面（ABS）处具有前部的第二钉扎层中，以改善钉扎强度并避免形态效应。 在另一个实施例中，AFM层被嵌入底部屏蔽并且围绕传感器堆叠中的上覆自由层的侧壁和背面，以减少读取器屏蔽间隔。 由于AFM层和被钉扎层之间的接触增加，固定强度得到改善。 自由层在底部屏蔽中心部分上方对准。

    Composite seed layer
    10.
    发明授权
    Composite seed layer 有权

    公开(公告)号：US10354707B2

    公开(公告)日：2019-07-16

    申请号：US15098913

    申请日：2016-04-14

    Applicant: Headway Technologies, Inc.

    Inventor： Kunliang Zhang ,  Ruhang Ding ,  Min Li ,  Wenyu Chen

    IPC: G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A seed layer stack with a smooth top surface having a peak to peak film thickness variation of about 0.5 nm is formed by sputter depositing a second seed layer on a first seed layer that is Mg, MgN, or an alloy thereof where the second seed layer has a bond energy substantially greater than that of the first seed layer. The second seed layer may be Ta or NiCr. In some embodiments, an uppermost seed layer that is one or both of Ru and Cu is deposited on the second seed layer. Higher coercivity (Hc) and perpendicular magnetic anisotropy (Hk) is observed in an overlying ferromagnetic layer than when a prior art seed layer stack is employed. The first seed layer has a thickness from 2 to 20 Angstroms and has a resputtering rate about 2 to 40 times that of the second seed layer.

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