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公开(公告)号：US11715491B2
公开(公告)日：2023-08-01
申请号：US17364300
申请日：2021-06-30
Applicant: Headway Technologies, Inc.
Inventor： Tom Zhong , Hiroshi Omine , Jianing Zhou , Kunliang Zhang , Ruhang Ding , Min Li
CPC classification number: G11B5/484 , G11B5/3163
Abstract: Methods of critical dimension (CD) uniformity control for magnetic head devices are disclosed. In some embodiments, a method can include providing a film stack, the film stack including a substrate, a magnetoresistive (MR) sensor layer, and a hard mask layer, patterning the hard mask layer using a first mask that defines critical shape patterns other than the CD, forming a mandrel pattern using a second mask that defines the CD, and forming a sidewall spacer pattern on sidewalls of the mandrel pattern, and removing the mandrel pattern.
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公开(公告)号：US20230005500A1
公开(公告)日：2023-01-05
申请号：US17364300
申请日：2021-06-30
Applicant: Headway Technologies, Inc.
Inventor： Tom Zhong , Hiroshi Omine , Jianing Zhou , Kunliang Zhang , Ruhang Ding , Min Li
Abstract: Methods of critical dimension (CD) uniformity control for magnetic head devices are disclosed. In some embodiments, a method can include providing a film stack, the film stack including a substrate, a magnetoresistive (MR) sensor layer, and a hard mask layer, patterning the hard mask layer using a first mask that defines critical shape patterns other than the CD, forming a mandrel pattern using a second mask that defines the CD, and forming a sidewall spacer pattern on sidewalls of the mandrel pattern, and removing the mandrel pattern.
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公开(公告)号：US08784674B2
公开(公告)日：2014-07-22
申请号：US14098598
申请日：2013-12-06
Applicant: Headway Technologies, Inc.
Inventor： Yan Wu , Zhigang Bai , Moris Dovek , Cherng-Chyi Han , Min Li , Jianing Zhou , Jiun-Ting Lee , Min Zheng
CPC classification number: G11B5/105 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163
Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a graded side shield that is conformal to the shape of the pole tip at an upper portion of the shield but not conformal to the pole tip at a lower portion. The shield includes a trailing shield, that is conformal to the trailing edge of the pole tip and may include a leading edge shield that magnetically connects two bottom ends of the graded side shield.
Abstract translation: 垂直磁记录（PMR）头被制造成具有通过分级侧屏蔽横向屏蔽的极尖，该平面侧屏蔽保护层在屏蔽的上部处与极尖的形状保持一致，但在下部不与极尖共形。 屏蔽件包括后挡板，其与电极尖端的后缘保持一致，并且可以包括磁性连接分级侧屏蔽件的两个底端的前缘屏蔽件。
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公开(公告)号：US09337414B2
公开(公告)日：2016-05-10
申请号：US13803362
申请日：2013-03-14
Applicant: Headway Technologies, Inc.
Inventor： Min Li , Ruhang Ding , Cherng Chyi Han , Jianing Zhou , Minghui Yu
IPC: G11B5/33 , H01L43/10 , H01L43/00 , H01L29/82 , G11B5/127 , H01L29/96 , H01L21/8246 , H01L43/08 , H01L43/12 , G11B5/39 , H01L43/02 , G11B5/31 , G01R33/09
CPC classification number: H01L43/08 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B5/398 , G11B5/3983 , H01L43/02 , H01L43/12
Abstract: A TMR (tunneling magnetoresistive) read sensor is formed in which a portion of the sensor stack containing the ferromagnetic free layer and the tunneling barrier layer is patterned to define a narrow trackwidth, but a synthetic antiferromagnetic pinning/pinned layer is left substantially unpatterned and extends in substantially as-deposited form beyond the lateral edges bounding the patterned portion. The narrow trackwidth of the patterned portion permits high resolution for densely recorded data. The larger pinning/pinned layer significantly improves magnetic stability and reduces thermal noise, while the method of formation eliminates possible ion beam etch (IBE) or reactive ion etch (RIE) damage to the edges of the pinning/pinned layer.
Abstract translation: 形成TMR（隧道磁阻）读取传感器，其中包含铁磁自由层和隧道势垒层的传感器堆叠的一部分被图案化以限定窄的轨道宽度，但是合成的反铁磁性钉扎/钉扎层基本上未被图案化地延伸 在基本上沉积的形式中超过限定图案化部分的横向边缘。 图案部分的窄轨道宽度允许高密度记录数据的分辨率。 较大的钉扎/钉扎层显着提高了磁稳定性并降低了热噪声，而形成方法消除了对钉扎/钉扎层边缘的可能的离子束蚀刻（IBE）或反应离子蚀刻（RIE）损伤。
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公开(公告)号：US20140091055A1
公开(公告)日：2014-04-03
申请号：US14098598
申请日：2013-12-06
Applicant: Headway Technologies, Inc.
Inventor： Yan Wu , Zhigang Bai , Moris Dovek , Cherng-Chyi Yan , Min Li , Jianing Zhou , Jiun-Ting Lee , Min Zheng
IPC: G11B5/105
CPC classification number: G11B5/105 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163
Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a graded side shield that is conformal to the shape of the pole tip at an upper portion of the shield but not conformal to the pole tip at a lower portion. The shield includes a trailing shield, that is conformal to the trailing edge of the pole tip and may include a leading edge shield that magnetically connects two bottom ends of the graded side shield.
Abstract translation: 垂直磁记录（PMR）头被制造成具有通过分级侧屏蔽横向屏蔽的极尖，该平面侧屏蔽保护层在屏蔽的上部处与极尖的形状保持一致，但在下部不与极尖共形。 屏蔽件包括后挡板，其与电极尖端的后缘保持一致，并且可以包括磁性连接分级侧屏蔽件的两个底端的前缘屏蔽件。
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Patent Agency Ranking
公开(公告)号：US20230343362A1
公开(公告)日：2023-10-26
申请号：US18215679
申请日：2023-06-28
Applicant: Headway Technologies, Inc.
Inventor： Tom Zhong , Hiroshi Omine , Jianing Zhou , Kunliang Zhang , Ruhang Ding , Min Li
CPC classification number: G11B5/484 , G11B5/3163
Abstract: Methods of critical dimension (CD) uniformity control for magnetic head devices are disclosed. In some embodiments, a method can include providing a film stack, the film stack including a substrate, a magnetoresistive (MR) sensor layer, and a hard mask layer, patterning the hard mask layer using a first mask that defines critical shape patterns other than the CD, forming a mandrel pattern using a second mask that defines the CD, and forming a sidewall spacer pattern on sidewalls of the mandrel pattern, and removing the mandrel pattern.
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7.发明授权公开(公告)号：US08865008B2
公开(公告)日：2014-10-21
申请号：US13660183
申请日：2012-10-25
Applicant: Headway Technologies, Inc.
Inventor： Ruhang Ding , Hui-Chuan Wang , Minghui Yu , Jianing Zhou , Min Li , Cherng Chyi Han
CPC classification number: G11B5/3116 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3909 , G11B5/398 , H01J37/08 , H01L43/12
Abstract: A two part ion beam etch sequence involving low energy (
Abstract translation: 公开了涉及低能量（<300eV）的两部分离子束蚀刻序列，用于在MTJ元件中制造小至20-25nm的自由层宽度（FLW）。 第一蚀刻工艺具有一个或多个低入射角，并考虑去除未覆盖的光致抗蚀剂层的MTJ叠层的70％至100％。 第二蚀刻工艺采用在多个周期期间重复的一个或多个高入射角和扫掠运动。 可以通过在任一蚀刻工艺期间改变入射角来调节侧壁斜率。 FLW比光致抗蚀剂层中的初始临界尺寸小约30nm，同时保持MR比超过60％并且低RA（电阻×面积）值为1.0欧姆-2μm2。
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公开(公告)号：US20140264665A1
公开(公告)日：2014-09-18
申请号：US13803362
申请日：2013-03-14
Applicant: HEADWAY TECHNOLOGIES, INC.
Inventor： Min Li , Ruhang Ding , Cherng Chyi Han , Jianing Zhou , Minghui Yu
CPC classification number: H01L43/08 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B5/398 , G11B5/3983 , H01L43/02 , H01L43/12
Abstract: A TMR (tunneling magnetoresistive) read sensor is formed in which a portion of the sensor stack containing the ferromagnetic free layer and the tunneling barrier layer is patterned to define a narrow trackwidth, but a synthetic antiferromagnetic pinning/pinned layer is left substantially unpatterned and extends in substantially as-deposited form beyond the lateral edges bounding the patterned portion. The narrow trackwidth of the patterned portion permits high resolution for densely recorded data. The larger pinning/pinned layer significantly improves magnetic stability and reduces thermal noise, while the method of formation eliminates possible ion beam etch (IBE) or reactive ion etch (RIE) damage to the edges of the pinning/pinned layer.
Abstract translation: 形成TMR（隧道磁阻）读取传感器，其中包含铁磁自由层和隧道势垒层的传感器堆叠的一部分被图案化以限定窄的轨道宽度，但是合成的反铁磁性钉扎/钉扎层基本上未被图案化地延伸 在基本上沉积的形式中超过限定图案化部分的横向边缘。 图案部分的窄轨道宽度允许高密度记录数据的分辨率。 较大的钉扎/钉扎层显着提高了磁稳定性并降低了热噪声，而形成方法消除了对钉扎/钉扎层边缘的可能的离子束蚀刻（IBE）或反应离子蚀刻（RIE）损伤。
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9.发明授权Thermal assisted magnetic recording spot-size converter with finite ridge width 有权具有有限脊宽的热辅助磁记录光斑尺寸转换器公开(公告)号：US09460740B1
公开(公告)日：2016-10-04
申请号：US14880385
申请日：2015-10-12
Applicant: Headway Technologies, Inc.
Inventor： Matteo Staffaroni , Xuhui Jin , Weihao Xu , Jianing Zhou , Ya-An Yang , Dayu Zhou
CPC classification number: G11B5/6088 , G02B6/0013 , G02B6/0028 , G02B6/1228 , G02B6/14 , G02B2006/12152 , G02B2006/12195 , G11B5/314 , G11B2005/0021
Abstract: A thermally assisted magnetic recording head is disclosed having a spot size converter with at least one secondary waveguide adjoining a top or bottom surface of a primary waveguide. Each waveguide has tapered sides but the secondary waveguide is tapered at a greater angle over a shorter taper distance in order to couple propagated light into the primary waveguide before the front end of the taper. The secondary waveguide terminates in a ridge with a fixed width w3 of about 50-170 nm that is between the front end of the taper and the air bearing surface (ABS). The ridge enables transverse magnetic (TM) transmission mode efficiency above 90% even with a typical process misalignment in the cross-track and height directions. The primary waveguide has a front section with width w2 between an end of its tapered sides and the ABS where w2 is substantially larger than w3.
Abstract translation: 公开了一种热辅助磁记录头，其具有光斑尺寸转换器，其具有邻近初级波导的顶表面或底表面的至少一个次级波导。 每个波导具有锥形侧面，但是次级波导在更短的锥形距离上以更大的角度逐渐变细，以便在锥形前端之前将传播的光耦合到主波导中。 次级波导终止于锥形前端与空气支承表面（ABS）之间的固定宽度w3约为50-170nm的脊。 即使在交叉轨道和高度方向上的典型工艺不对准，该脊也能使横向磁（TM）传输模式效率高于90％。 主波导具有在其锥形侧面的端部之间的宽度w2的前部以及w2基本上大于w3的ABS。
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10.发明申请公开(公告)号：US20140116984A1
公开(公告)日：2014-05-01
申请号：US13660183
申请日：2012-10-25
Applicant: HEADWAY TECHNOLOGIES, INC.
Inventor： Ruhang Ding , Hui-Chuan Wang , Minghui Yu , Jianing Zhou , Min Li , Cherng Chyi Han
IPC: G11B5/84
CPC classification number: G11B5/3116 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3909 , G11B5/398 , H01J37/08 , H01L43/12
Abstract: A two part ion beam etch sequence involving low energy (
Abstract translation: 公开了涉及低能量（<300eV）的两部分离子束蚀刻序列，用于在MTJ元件中制造小至20-25nm的自由层宽度（FLW）。 第一蚀刻工艺具有一个或多个低入射角，并考虑去除未覆盖的光致抗蚀剂层的MTJ叠层的70％至100％。 第二蚀刻工艺采用在多个周期期间重复的一个或多个高入射角和扫掠运动。 可以通过在任一蚀刻工艺期间改变入射角来调节侧壁斜率。 FLW比光致抗蚀剂层中的初始临界尺寸小约30nm，同时保持MR比超过60％并且低RA（电阻×面积）值为1.0欧姆-2μm2。
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