公开(公告)号：US08124499B2

公开(公告)日：2012-02-28

申请号：US11935197

申请日：2007-11-05

申请人： Francois J. Henley ,  Albert Lamm ,  Babak Adibi

发明人： Francois J. Henley ,  Albert Lamm ,  Babak Adibi

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L21/26506 ,  H01L21/3221

摘要： Free standing thickness of materials are fabricated using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. A semiconductor substrate is provided having a surface region and a thickness. The surface region of the semiconductor substrate is subjected to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. The surface region of the semiconductor substrate is subjected to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level.

摘要翻译： 使用一个或多个半导体衬底（例如单晶硅，多晶硅，硅锗，锗，III / IV族材料等）制造材料的独立的厚度。 提供具有表面区域和厚度的半导体衬底。 半导体衬底的表面区域经受使用线性加速器产生的第一组多个高能粒子，以在裂开区域内形成多个吸杂位点的区域，该裂开区域设置在该表面区域的下方以限定厚度 的待分离材料，半导体衬底保持在第一温度。 半导体衬底的表面区域受到使用线性加速器产生的第二多个高能粒子，第二多个高能粒子被设置成将劈裂区域的应力水平从第一应力水平增加到第二应力 水平。

公开(公告)号：US20080128641A1

公开(公告)日：2008-06-05

申请号：US11936582

申请日：2007-11-07

申请人： Francois J. Henley ,  Albert Lamm ,  Babak Adibi

发明人： Francois J. Henley ,  Albert Lamm ,  Babak Adibi

IPC分类号： G21K5/10 ,  H05H9/00

CPC分类号： H01L21/26506 ,  H01J37/04 ,  H01J37/3171 ,  H01J2237/04737 ,  H01L21/2658 ,  H01L21/26593 ,  H05H7/04 ,  H05H7/10 ,  H05H9/00

摘要： A system for forming one or more detachable semiconductor films capable of being free-standing. The apparatus includes an ion source to generate a plurality of collimated charged particles at a first energy level. The system includes a linear accelerator having a plurality of modular radio frequency quadrupole (RFQ) elements numbered from 1 through N successively coupled to each other, where N is an integer greater than 1. The linear accelerator controls and accelerates the plurality of collimated charged particles at the first energy level into a beam of charge particles having a second energy level. RFQ element numbered 1 is operably coupled to the ion source. The system includes an exit aperture coupled to RFQ element numbered N of the RFQ linear accelerator. In a specific embodiment, the system includes a beam expander coupled to the exit aperture, the beam expander being configured to process the beam of charged particles at the second energy level into an expanded beam of charged particles. The system includes a process chamber coupled to the beam expander and a workpiece provided within the process chamber to be implanted

摘要翻译： 一种用于形成能够独立的一个或多个可分离半导体膜的系统。 该装置包括用于在第一能级产生多个准直带电粒子的离子源。 该系统包括线性加速器，其具有从1到N编号的多个模块化射频四极杆（RFQ）元件，其连续地彼此耦合，其中N是大于1的整数。线性加速器控制和加速多个准直带电粒子 在第一能级进入具有第二能级的电荷粒子束。 编号为1的RFQ元件可操作地耦合到离子源。 该系统包括耦合到RFQ线性加速器的编号为N的RFQ元件的出口孔。 在一个具体实施例中，该系统包括耦合到出口孔的光束扩展器，该光束扩展器被配置成将处于第二能级的带电粒子束处理成扩展的带电粒子束。 该系统包括耦合到光束扩展器的处理室和设置在待植入的处理室内的工件

公开(公告)号：US20080206962A1

公开(公告)日：2008-08-28

申请号：US11935197

申请日：2007-11-05

申请人： Francois J. Henley ,  Albert Lamm ,  Babak Adibi

发明人： Francois J. Henley ,  Albert Lamm ,  Babak Adibi

IPC分类号： H01L21/302 ,  H01L21/322

CPC分类号： H01L21/76254 ,  H01L21/26506 ,  H01L21/3221

摘要： A method for fabricating free standing thickness of materials using one or more semiconductor substrates, e.g., single crystal silicon, polysilicon, silicon germanium, germanium, group III/IV materials, and others. In a specific embodiment, the present method includes providing a semiconductor substrate having a surface region and a thickness. The method includes subjecting the surface region of the semiconductor substrate to a first plurality of high energy particles generated using a linear accelerator to form a region of a plurality of gettering sites within a cleave region, the cleave region being provided beneath the surface region to defined a thickness of material to be detached, the semiconductor substrate being maintained at a first temperature. In a specific embodiment, the method includes subjecting the surface region of the semiconductor substrate to a second plurality of high energy particles generated using the linear accelerator, the second plurality of high energy particles being provided to increase a stress level of the cleave region from a first stress level to a second stress level. In a preferred embodiment, the semiconductor substrate is maintained at a second temperature, which is higher than the first temperature. The method frees the thickness of detachable material using a cleaving process, e.g., controlled cleaving process.

摘要翻译： 使用一个或多个半导体衬底（例如单晶硅，多晶硅，硅锗，锗，III / IV族材料等）制造材料的独立厚度的方法。 在具体实施例中，本方法包括提供具有表面区域和厚度的半导体衬底。 该方法包括使半导体衬底的表面区域经受使用线性加速器产生的第一组多个高能粒子，以在裂开区域内形成多个吸杂位点的区域，该解理区域设置在表面区域下方以限定 待分离的材料的厚度，半导体衬底保持在第一温度。 在具体实施方案中，该方法包括使半导体衬底的表面区域经受使用线性加速器产生的第二多个高能粒子，第二多个高能粒子被设置成增加裂解区域的应力水平 第一压力水平达到第二压力水平。 在优选实施例中，半导体衬底保持在高于第一温度的第二温度。 该方法使用裂解过程（例如受控的裂解过程）释放可分离材料的厚度。

公开(公告)号：US08871619B2

公开(公告)日：2014-10-28

申请号：US12482947

申请日：2009-06-11

申请人： Babak Adibi ,  Edward S. Murrer

发明人： Babak Adibi ,  Edward S. Murrer

IPC分类号： H01L21/265 ,  H01L21/266 ,  H01L21/425 ,  H01L21/426 ,  H01L31/08 ,  H01L31/10 ,  H01L31/18 ,  H01L31/072 ,  H01L31/0224

CPC分类号： H01L21/266 ,  H01L21/26513 ,  H01L31/022425 ,  H01L31/072 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells and other semiconductor devices are fabricated more efficiently and for less cost using an implanted doping fabrication system. A system for implanting a semiconductor substrate includes an ion source (such as a single-species delivery module), an accelerator to generate from the ion source an ion beam having an energy of no more than 150 kV, and a beam director to expose the substrate to the beam. In one embodiment, the ion source is single-species delivery module that includes a single-gas delivery element and a single-ion source. Alternatively, the ion source is a plasma source used to generate a plasma beam. The system is used to fabricate solar cells having lightly doped photo-receptive regions and more highly doped grid lines. This structure reduces the formation of “dead layers” and improves the contact resistance, thereby increasing the efficiency of a solar cell.

摘要翻译： 使用植入式掺杂制造系统，更有效地制造太阳能电池和其它半导体器件并且以较低成本制造。 用于植入半导体衬底的系统包括离子源（例如单一物质传递模块），从离子源产生具有不超过150kV的能量的离子束的加速器和用于暴露 衬底到梁。 在一个实施方案中，离子源是单物质输送模块，其包括单气体输送元件和单离子源。 或者，离子源是用于产生等离子体束的等离子体源。 该系统用于制造具有轻掺杂的光接收区域和更高掺杂的栅格线的太阳能电池。 该结构减少了“死层”的形成，提高了接触电阻，提高了太阳能电池的效率。

公开(公告)号：US20110192993A1

公开(公告)日：2011-08-11

申请号：US13024251

申请日：2011-02-09

申请人： Moon Chun ,  Babak Adibi

发明人： Moon Chun ,  Babak Adibi

IPC分类号： G21K5/00

CPC分类号： H01J37/3171 ,  G03F1/20 ,  H01J2237/31711 ,  H01L21/266

摘要： An adjustable shadow mask implantation system comprising: an ion source configured to provide ions; and an shadow mask assembly configured to selectively allow ions from the ion source to pass therethrough to a substrate where they are implanted, wherein the shadow mask assembly is configured to adjust between a first position and a second position, wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines absent any lines with an intersecting orientation with respect to the multiple substantially parallel lines when set in the first position, and wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines and a line with an intersecting orientation with respect to the multiple substantially parallel lines when set in the second position.

摘要翻译： 一种可调节荫罩植入系统，包括：离子源，被配置为提供离子; 以及荫罩组件，其被配置为选择性地允许来自所述离子源的离子通过所述阴影掩模组合件到达其被植入的衬底，其中所述荫罩组件被配置为在第一位置和第二位置之间进行调节，其中所述荫罩组件使得离子 植入多个基本上平行的线，当设置在第一位置时，不存在相对于多个基本上平行的线具有相交取向的任何线，并且其中荫罩组件能够离子注入多个基本上平行的线和具有相交取向的线， 当设置在第二位置时相对于多个基本平行的线。

公开(公告)号：US20090308440A1

公开(公告)日：2009-12-17

申请号：US12483017

申请日：2009-06-11

申请人： Babak Adibi ,  Edward S. Murrer

发明人： Babak Adibi ,  Edward S. Murrer

IPC分类号： H01L31/00 ,  H01L31/0352 ,  H01L21/24 ,  H01L21/22

CPC分类号： H01L21/266 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L31/022425 ,  H01L31/072 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of forming a solar cell, the method comprising: providing a semiconducting wafer having a pre-doped region; performing a first ion implantation of a dopant into the semiconducting wafer to form a first doped region over the pre-doped region, wherein the first ion implantation has a concentration-versus-depth profile; and performing a second ion implantation of a dopant into the semiconducting wafer to form a second doped region over the pre-doped region, wherein the second ion implantation has a concentration-versus-depth profile different from that of the first ion implantation, wherein at least one of the first doped region and the second doped region is configured to generate electron-hole pairs upon receiving light, and wherein the first and second ion implantations are performed independently of one another.

摘要翻译： 一种形成太阳能电池的方法，所述方法包括：提供具有预掺杂区域的半导体晶片; 将掺杂剂的第一离子注入到所述半导体晶片中以在所述预掺杂区域上形成第一掺杂区域，其中所述第一离子注入具有浓度对深度分布; 以及将掺杂剂的第二离子注入到所述半导体晶片中以在所述预掺杂区域上形成第二掺杂区域，其中所述第二离子注入具有与所述第一离子注入不同的浓度对深度分布，其中在 第一掺杂区域和第二掺杂区域中的至少一个被配置为在接收光时产生电子 - 空穴对，并且其中第一和第二离子注入彼此独立地进行。

公开(公告)号：US20090309039A1

公开(公告)日：2009-12-17

申请号：US12482947

申请日：2009-06-11

申请人： Babak Adibi ,  Edward S. Murrer

发明人： Babak Adibi ,  Edward S. Murrer

IPC分类号： H01J3/14 ,  H01J37/08 ,  H01L31/18 ,  H01L21/265

CPC分类号： H01L21/266 ,  H01L21/26513 ,  H01L31/022425 ,  H01L31/072 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells and other semiconductor devices are fabricated more efficiently and for less cost using an implanted doping fabrication system. A system for implanting a semiconductor substrate includes an ion source (such as a single-species delivery module), an accelerator to generate from the ion source an ion beam having an energy of no more than 150 kV, and a beam director to expose the substrate to the beam. In one embodiment, the ion source is single-species delivery module that includes a single-gas delivery element and a single-ion source. Alternatively, the ion source is a plasma source used to generate a plasma beam. The system is used to fabricate solar cells having lightly doped photo-receptive regions and more highly doped grid lines. This structure reduces the formation of “dead layers” and improves the contact resistance, thereby increasing the efficiency of a solar cell.

摘要翻译： 使用植入式掺杂制造系统，更有效地制造太阳能电池和其它半导体器件并且以较低成本制造。 用于植入半导体衬底的系统包括离子源（例如单一物质传递模块），从离子源产生具有不超过150kV的能量的离子束的加速器和用于暴露 衬底到梁。 在一个实施方案中，离子源是单物质输送模块，其包括单气体输送元件和单离子源。 或者，离子源是用于产生等离子体束的等离子体源。 该系统用于制造具有轻掺杂的光接收区域和更高掺杂的栅格线的太阳能电池。 该结构减少了“死层”的形成，提高了接触电阻，提高了太阳能电池的效率。

公开(公告)号：US08997688B2

公开(公告)日：2015-04-07

申请号：US13363341

申请日：2012-01-31

申请人： Babak Adibi ,  Moon Chun

发明人： Babak Adibi ,  Moon Chun

IPC分类号： C23C14/48 ,  H01J37/32 ,  H01L21/223 ,  C23C14/04

CPC分类号： H01L31/1876 ,  C23C14/042 ,  C23C14/48 ,  H01J37/185 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/0437 ,  H01J2237/184 ,  H01J2237/201 ,  H01J2237/327 ,  H01J2237/3365 ,  H01L21/2236 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

摘要翻译： 具有栅格组件的离子注入系统。 该系统包括构造成在等离子体区域中提供等离子体的等离子体源; 第一格栅板，其具有多个孔，其被配置为允许来自等离子体区域的离子通过，其中所述第一格栅板被配置为被电源偏置; 第二格栅板，其具有多个孔，其构造成允许离子穿过第一栅格板之后的离子通过，其中第二栅格板被配置为被电源偏置; 以及衬底保持器，其被配置为在所述离子通过所述第二栅格板之后将所述衬底支撑在所述衬底被注入的位置处的所述离子。

公开(公告)号：US08749053B2

公开(公告)日：2014-06-10

申请号：US12821053

申请日：2010-06-22

申请人： Babak Adibi ,  Moon Chun

发明人： Babak Adibi ,  Moon Chun

IPC分类号： H01L21/265

CPC分类号： H01L31/1876 ,  C23C14/042 ,  C23C14/48 ,  H01J37/185 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/0437 ,  H01J2237/184 ,  H01J2237/201 ,  H01J2237/327 ,  H01J2237/3365 ,  H01L21/2236 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid plate, wherein the second grid plate comprises a plurality of apertures; flowing ions from the plasma in the plasma region through the apertures in the positively-biased first grid plate; flowing at least a portion of the ions that flowed through the apertures in the positively-biased first grid plate through the apertures in the negatively-biased second grid plate; and implanting a substrate with at least a portion of the ions that flowed through the apertures in the negatively-biased second grid plate.

摘要翻译： 一种离子注入的方法，包括：在室的等离子体区域内提供等离子体; 使第一格栅板向正偏置，其中第一格栅板包括多个孔; 负偏置第二格栅板，其中所述第二格板包括多个孔; 使来自等离子体区域中的等离子体的离子通过正偏置的第一格栅板中的孔流动; 使流经所述正偏置的第一格栅板中的孔的至少一部分离子流过负偏压的第二格栅板中的孔; 以及用至少一部分离子注入衬底，所述离子流过所述负偏压的第二栅格板中的所述孔。

公开(公告)号：US20090308450A1

公开(公告)日：2009-12-17

申请号：US12482685

申请日：2009-06-11

申请人： Babak Adibi ,  Edward S. Murrer

发明人： Babak Adibi ,  Edward S. Murrer

IPC分类号： H01L31/0216 ,  H01L31/0352 ,  H01L31/18 ,  H01L21/265 ,  B05B17/00

CPC分类号： H01L21/266 ,  H01L21/26513 ,  H01L31/022425 ,  H01L31/072 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Solar cells in accordance with the present invention have reduced ohmic losses. These cells include photo-receptive regions that are doped less densely than adjacent selective emitter regions. The photo-receptive regions contain multiple four-sided pyramids that decrease the amount of light lost to the solar cell by reflection. The smaller doping density in the photo-receptive regions results in less blue light that is lost by electron-hole recombination. The higher doping density in the selective emitter region allows for better contacts with the metallic grid coupled to the multiple emitter regions. Preferably, the selective emitter and photo-receptive regions are both implanted using a narrow ion beam containing the dopants.

摘要翻译： 根据本发明的太阳能电池具有降低的欧姆损耗。 这些电池包括比相邻选择性发射极区域更密集地掺杂的光接收区域。 光接收区域包含多个四边形金字塔，通过反射减少太阳能电池损失的光量。 在光接受区域中较小的掺杂密度导致较少的蓝光被电子 - 空穴复合损失。 选择性发射极区域中较高的掺杂密度允许与耦合到多个发射极区域的金属栅极的更好的接触。 优选地，使用包含掺杂剂的窄离子束来注入选择性发射极和光接收区。