公开(公告)号：US20140151797A1

公开(公告)日：2014-06-05

申请号：US14091739

申请日：2013-11-27

申请人： Enpirion, Inc.

发明人： Ashraf W. Lotfi ,  Jeffrey Demski ,  Anatoly Feygenson ,  Douglas Dean Lopata ,  Jay Norton ,  John D. Weld

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L27/0207 ,  H01L21/28518 ,  H01L21/76801 ,  H01L21/76895 ,  H01L21/8234 ,  H01L21/823871 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/4824 ,  H01L23/495 ,  H01L23/49589 ,  H01L23/522 ,  H01L23/642 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L27/0203 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device and method of forming the same including, in one embodiment, a substrate and a plurality of source and drain regions formed as alternating pattern on the substrate. The semiconductor device also includes a plurality of gates formed over the substrate between and parallel to ones of the plurality of source and drain regions. The semiconductor device also includes a first plurality of alternating source and drain metallic strips formed in a first metallic layer above the substrate and parallel to and forming an electrical contact with respective ones of the plurality of source and drain regions.

摘要翻译： 一种半导体器件及其形成方法，在一个实施例中包括在衬底上形成为交替图案的衬底和多个源极和漏极区域。 该半导体器件还包括多个栅极，该多个栅极形成在衬底之上并平行于多个源极和漏极区域之一。 半导体器件还包括第一多个交替的源极和漏极金属条，形成在衬底上方的第一金属层中，并平行于并与多个源极和漏极区中的相应的一个形成电接触。

公开(公告)号：US20140151795A1

公开(公告)日：2014-06-05

申请号：US14091718

申请日：2013-11-27

申请人： Enpirion, Inc.

发明人： Ashraf W. Lotfi ,  Jeffrey Demski ,  Anatoly Feygenson ,  Douglas Dean Lopata ,  Jay Norton ,  John D. Weld

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L23/00

CPC分类号： H01L27/0207 ,  H01L21/28518 ,  H01L21/76801 ,  H01L21/76895 ,  H01L21/8234 ,  H01L21/823871 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/4824 ,  H01L23/495 ,  H01L23/49589 ,  H01L23/522 ,  H01L23/642 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L27/0203 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device and method of forming the same including, in one embodiment, a semiconductor die formed with a plurality of laterally diffused metal oxide semiconductor (“LDMOS”) cells, and a metallic layer electrically coupled to the plurality of LDMOS cells. The semiconductor device also includes a plurality of gate drivers positioned along a periphery of the semiconductor die and electrically coupled to gates of the plurality of LDMOS cells through the metallic layer.

摘要翻译： 一种半导体器件及其形成方法，在一个实施例中，包括形成有多个横向扩散的金属氧化物半导体（“LDMOS”）单元的半导体管芯和与多个LDMOS电池电耦合的金属层。 半导体器件还包括沿着半导体管芯的周边定位的多个栅极驱动器，并通过金属层电耦合到多个LDMOS电池的栅极。

公开(公告)号：US09299691B2

公开(公告)日：2016-03-29

申请号：US14091739

申请日：2013-11-27

申请人： Enpirion, Inc.

发明人： Ashraf W. Lotfi ,  Jeffrey Demski ,  Anatoly Feygenson ,  Douglas Dean Lopata ,  Jay Norton ,  John D. Weld

IPC分类号： H01L29/06 ,  H01L27/02 ,  H01L23/522 ,  H01L29/417 ,  H01L29/66 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/8238 ,  H01L25/00 ,  H01L27/06 ,  H01L23/482 ,  H01L23/36 ,  H01L23/495 ,  H01L29/78 ,  H01L23/31 ,  H01L23/64 ,  H01L23/00 ,  H01L29/45 ,  H01L29/49 ,  H01L29/08 ,  H01L29/10 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L27/0207 ,  H01L21/28518 ,  H01L21/76801 ,  H01L21/76895 ,  H01L21/8234 ,  H01L21/823871 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/4824 ,  H01L23/495 ,  H01L23/49589 ,  H01L23/522 ,  H01L23/642 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L27/0203 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device and method of forming the same including, in one embodiment, a substrate and a plurality of source and drain regions formed as alternating pattern on the substrate. The semiconductor device also includes a plurality of gates formed over the substrate between and parallel to ones of the plurality of source and drain regions. The semiconductor device also includes a first plurality of alternating source and drain metallic strips formed in a first metallic layer above the substrate and parallel to and forming an electrical contact with respective ones of the plurality of source and drain regions.

摘要翻译： 一种半导体器件及其形成方法，在一个实施例中包括在衬底上形成为交替图案的衬底和多个源极和漏极区域。 该半导体器件还包括多个栅极，该多个栅极形成在衬底之上并平行于多个源极和漏极区域之一。 半导体器件还包括第一多个交替的源极和漏极金属条，其形成在衬底上方的第一金属层中，并且与多个源极和漏极区中的相应的平行并与之形成电接触。

公开(公告)号：US20140159130A1

公开(公告)日：2014-06-12

申请号：US14091839

申请日：2013-11-27

申请人： Enpirion, Inc.

发明人： Ashraf W. Lotfi ,  Jeffrey Demski ,  Anatoly Feygenson ,  Douglas Dean Lopata ,  Jay Norton ,  John D. Weld

IPC分类号： H01L27/02 ,  H01L25/00 ,  H01L27/06

CPC分类号： H01L27/0207 ,  H01L21/28518 ,  H01L21/76801 ,  H01L21/76895 ,  H01L21/8234 ,  H01L21/823871 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/4824 ,  H01L23/495 ,  H01L23/49589 ,  H01L23/522 ,  H01L23/642 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L27/0203 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： An apparatus and method of forming the same including, in one embodiment, a printed circuit board and a semiconductor device coupled to the printed circuit board. The apparatus also includes a decoupling device coupled to the printed circuit board and positioned under the semiconductor device.

摘要翻译： 在一个实施例中，其形成装置和方法包括印刷电路板和耦合到印刷电路板的半导体器件。 该装置还包括耦合到印刷电路板并位于半导体器件下方的去耦装置。

公开(公告)号：US20140151794A1

公开(公告)日：2014-06-05

申请号：US14091626

申请日：2013-11-27

申请人： Enpirion, Inc.

发明人： Ashraf W. Lotfi ,  Jeffrey Demski ,  Anatoly Feygenson ,  Douglas Dean Lopata ,  Jay Norton ,  John D. Weld

IPC分类号： H01L27/088 ,  H01L23/00

CPC分类号： H01L27/0207 ,  H01L21/28518 ,  H01L21/76801 ,  H01L21/76895 ,  H01L21/8234 ,  H01L21/823871 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/4824 ,  H01L23/495 ,  H01L23/49589 ,  H01L23/522 ,  H01L23/642 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L27/0203 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device and method of forming the same including, in one embodiment, a semiconductor die formed with a plurality of laterally diffused metal oxide semiconductor (“LDMOS”) cells. The semiconductor device also includes a redistribution layer electrically coupled to the plurality of LDMOS cells and a plurality of metallic pillars distributed over and electrically coupled to the redistribution layer.

摘要翻译： 一种半导体器件及其形成方法，在一个实施例中包括形成有多个横向扩散的金属氧化物半导体（“LDMOS”）单元的半导体管芯。 半导体器件还包括电耦合到多个LDMOS电池的再分布层和分布在电分配层上并电耦合到再分配层的多个金属柱。

公开(公告)号：US09553081B2

公开(公告)日：2017-01-24

申请号：US14091626

申请日：2013-11-27

申请人： Enpirion, Inc.

发明人： Ashraf W. Lotfi ,  Jeffrey Demski ,  Anatoly Feygenson ,  Douglas Dean Lopata ,  Jay Norton ,  John D. Weld

IPC分类号： H01L27/06 ,  H01L23/482 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/02 ,  H01L23/522 ,  H01L29/417 ,  H01L29/66 ,  H01L27/092 ,  H01L27/088 ,  H01L25/00 ,  H01L23/36 ,  H01L23/495 ,  H01L29/78 ,  H01L23/31 ,  H01L23/64 ,  H01L23/00 ,  H01L29/45 ,  H01L29/49 ,  H01L29/08 ,  H01L29/10 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L27/0207 ,  H01L21/28518 ,  H01L21/76801 ,  H01L21/76895 ,  H01L21/8234 ,  H01L21/823871 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/4824 ,  H01L23/495 ,  H01L23/49589 ,  H01L23/522 ,  H01L23/642 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L27/0203 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device and method of forming the same including, in one embodiment, a semiconductor die formed with a plurality of laterally diffused metal oxide semiconductor (“LDMOS”) cells. The semiconductor device also includes a redistribution layer electrically coupled to the plurality of LDMOS cells and a plurality of metallic pillars distributed over and electrically coupled to the redistribution layer.

摘要翻译： 一种半导体器件及其形成方法，在一个实施例中包括形成有多个横向扩散的金属氧化物半导体（“LDMOS”）单元的半导体管芯。 半导体器件还包括电耦合到多个LDMOS电池的再分布层和分布在电分配层上并电耦合到再分配层的多个金属柱。

公开(公告)号：US09443839B2

公开(公告)日：2016-09-13

申请号：US14091718

申请日：2013-11-27

申请人： Enpirion, Inc.

发明人： Ashraf W. Lotfi ,  Jeffrey Demski ,  Anatoly Feygenson ,  Douglas Dean Lopata ,  Jay Norton ,  John D. Weld

IPC分类号： H01L29/417 ,  H01L21/8238 ,  H01L27/02 ,  H01L23/522 ,  H01L29/66 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8234 ,  H01L25/00 ,  H01L27/06 ,  H01L23/482 ,  H01L23/36 ,  H01L23/495 ,  H01L29/78 ,  H01L23/31 ,  H01L23/64 ,  H01L23/00 ,  H01L29/45 ,  H01L29/49 ,  H01L29/08 ,  H01L29/10 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L27/0207 ,  H01L21/28518 ,  H01L21/76801 ,  H01L21/76895 ,  H01L21/8234 ,  H01L21/823871 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/4824 ,  H01L23/495 ,  H01L23/49589 ,  H01L23/522 ,  H01L23/642 ,  H01L24/16 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L27/0203 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/7835 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49175 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device and method of forming the same including, in one embodiment, a semiconductor die formed with a plurality of laterally diffused metal oxide semiconductor (“LDMOS”) cells, and a metallic layer electrically coupled to the plurality of LDMOS cells. The semiconductor device also includes a plurality of gate drivers positioned along a periphery of the semiconductor die and electrically coupled to gates of the plurality of LDMOS cells through the metallic layer.

摘要翻译： 一种半导体器件及其形成方法，在一个实施例中，包括形成有多个横向扩散的金属氧化物半导体（“LDMOS”）单元的半导体管芯和与多个LDMOS电池电耦合的金属层。 半导体器件还包括沿着半导体管芯的周边定位的多个栅极驱动器，并通过金属层电耦合到多个LDMOS电池的栅极。