Radio communication antenna and radio communication device
    4.
    发明授权
    Radio communication antenna and radio communication device 有权
    无线电通信天线和无线电通信设备

    公开(公告)号:US09059512B2

    公开(公告)日:2015-06-16

    申请号:US13929735

    申请日:2013-06-27

    CPC classification number: H01Q5/378 H01Q5/48 H01Q9/065 H01Q9/16

    Abstract: The present invention relates to a radio communication antenna and a radio communication device including the same. The radio communication antenna of the present invention includes first conductive wires extending in opposite directions with respect to a first direction on a substrate to form a dipole antenna, second conductive wires separated from the first conductive wires to be parallel with the first conductive wires, and stubs connected between the first conductive wires and the second conductive wires in a second direction intersecting with the first direction.

    Abstract translation: 无线电通信天线和包括该无线电通信天线的无线电通信装置技术领域本发明涉及无线电通信天线和包括该无线电通信天线的无线电通信装置。 本发明的无线电通信天线包括在基板上相对于第一方向相反方向延伸的第一导线,以形成偶极子天线,与第一导线分开的与第一导线平行的第二导线,以及 在与第一方向相交的第二方向上连接在第一导线和第二导线之间的短截线。

    Thin film transistor and method for manufacturing the same
    8.
    发明授权
    Thin film transistor and method for manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US09153651B2

    公开(公告)日:2015-10-06

    申请号:US13757699

    申请日:2013-02-01

    Abstract: Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

    Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管的制造方法包括在基板上形成栅电极,形成与栅电极相邻的有源层,并具有氧化物半导体,在有源层上形成氧供给层,在栅极电极 有源层,形成耦合到有源层的源电极和漏电极,形成覆盖栅电极和栅电介质的平坦化层,形成暴露有源层的孔,并在气氛中对平坦化层进行热处理工艺 的氧气。

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