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    Flexible touch panel and method of manufacturing thereof
    1.
    发明授权
    Flexible touch panel and method of manufacturing thereof 有权

    公开(公告)号：US11789576B2

    公开(公告)日：2023-10-17

    申请号：US17903145

    申请日：2022-09-06

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Chan Woo Park ,  Sang Hoon Cheon ,  Tae-Youb Kim ,  Bock Soon Na ,  Ji-Young Oh ,  Su Jae Lee

    IPC: G06F3/044

    CPC classification number: G06F3/0446 ,  G06F2203/04102 ,  G06F2203/04103 ,  G06F2203/04111 ,  G06F2203/04112

    Abstract: Provided is a flexible touch panel. The flexible touch panel includes a first sensor part extending in a first direction on a substrate, a second sensor part extending in a second direction crossing the first direction on the substrate, and a protective layer surrounding the first and second sensor parts, wherein the first sensor part includes first sensor patterns spaced apart from each other in the first direction, a first connection electrode disposed between the first sensor patterns adjacent to each other, and first connection patterns connecting the first connection electrode and the first sensor patterns to each other, wherein each of the first sensor patterns includes first electrode patterns spaced apart from each other in a form of a mesh and first wiring patterns connecting the adjacent first electrode patterns to each other, wherein each of the first wiring patterns and the first connection patterns has a serpentine structure, wherein the first electrode patterns and the first wiring patterns include the same material as each other.

    LOW FREQUENCY VIBRATING ACTUATOR DEVICE
    5.
    发明申请
    LOW FREQUENCY VIBRATING ACTUATOR DEVICE 有权

    公开(公告)号：US20210126182A1

    公开(公告)日：2021-04-29

    申请号：US17023730

    申请日：2020-09-17

    Applicant: Electronics And Telecommunications Research Institute

    Inventor： Kang-Ho Park ,  Seongdeok Ahn ,  Jong Tae Lim ,  Chan Woo Park ,  Ji-Young Oh

    IPC: H01L41/047 ,  H01L41/053 ,  H01L41/083

    Abstract: Provided is a low frequency vibrating actuator device. The low frequency vibrating actuator device includes a substrate including a pair of connection electrodes, an actuator provided on the pair of connection electrodes to generate vibration, a support provided on the actuator, a vibration membrane provided on the support to vibrate according to the actuator, and a vibrating mass provided on the vibration membrane to vibrate according to the vibration membrane. The actuator includes a plurality of laminated insulating layers and internal electrodes that are alternately laminated between the insulating layers adjacent to each other, and a top surface of the support, which contacts the vibration membrane, has an area that is equal to or less than that of a bottom surface of the support, which contacts the actuator.

    Thin film transistor and method for manufacturing the same
    7.
    发明授权
    Thin film transistor and method for manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US09153651B2

    公开(公告)日：2015-10-06

    申请号：US13757699

    申请日：2013-02-01

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Sang Chul Lim ,  Ji-Young Oh ,  Seongdeok Ahn ,  Kyoung Ik Cho ,  Sang Seok Lee ,  Jae Bon Koo

    IPC: H01L21/00 ,  H01L21/84 ,  H01L29/26

    CPC classification number: H01L29/263 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

    Abstract: Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

    Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管的制造方法包括在基板上形成栅电极，形成与栅电极相邻的有源层，并具有氧化物半导体，在有源层上形成氧供给层，在栅极电极 有源层，形成耦合到有源层的源电极和漏电极，形成覆盖栅电极和栅电介质的平坦化层，形成暴露有源层的孔，并在气氛中对平坦化层进行热处理工艺 的氧气。

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