Light emitting diode and manufacturing method thereof
    2.
    发明授权
    Light emitting diode and manufacturing method thereof 有权
    发光二极管及其制造方法

    公开(公告)号:US09257610B2

    公开(公告)日:2016-02-09

    申请号:US14290192

    申请日:2014-05-29

    Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a work function of the second electrode.

    Abstract translation: 发光二极管包括:基板; 设置在所述基板上的n型半导体层; 设置在所述n型半导体层上的有源层; 设置在有源层上的p型半导体层; 设置在所述p型半导体层上并由金属氧化物构成的第一电极; 设置在第一电极上并由石墨烯制成的第二电极; 设置在所述第二电极上的p型电极; 以及设置在n型半导体层上的n型电极,其中第一电极的功函数小于p型半导体层的功函数,但大于第二电极的功函数。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
    发光二极管及其制造方法

    公开(公告)号:US20160099386A1

    公开(公告)日:2016-04-07

    申请号:US14969568

    申请日:2015-12-15

    Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a to work function of the second electrode.

    Abstract translation: 发光二极管包括:基板; 设置在所述基板上的n型半导体层; 设置在所述n型半导体层上的有源层; 设置在有源层上的p型半导体层; 设置在所述p型半导体层上并由金属氧化物构成的第一电极; 设置在第一电极上并由石墨烯制成的第二电极; 设置在所述第二电极上的p型电极; 以及设置在n型半导体层上的n型电极,其中第一电极的功函数小于p型半导体层的功函数,但大于第二电极的功函数。

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