Graphene photonic device
    2.
    发明授权
    Graphene photonic device 有权
    石墨烯光子器件

    公开(公告)号:US09182541B2

    公开(公告)日:2015-11-10

    申请号:US13794582

    申请日:2013-03-11

    CPC classification number: G02B6/02 G02F1/011 G02F1/0136 G02F2203/10

    Abstract: Provided is a graphene optical device. The optical device includes a lower clad, an optical waveguide extended on the lower clad in a first direction, a first dielectric layer disposed on the optical waveguide, and a graphene layer extended on the first dielectric layer in a second direction.

    Abstract translation: 提供了一种石墨烯光学器件。 光学器件包括下包层,在第一方向上延伸在下包层上的光波导,设置在光波导上的第一介电层和在第二方向上延伸在第一介电层上的石墨烯层。

    Method of growing high-quality single layer graphene by using Cu/Ni multi-layer metalic catalyst, and graphene device using the same
    4.
    发明授权
    Method of growing high-quality single layer graphene by using Cu/Ni multi-layer metalic catalyst, and graphene device using the same 有权
    使用Cu / Ni多层金属催化剂生长高质量单层石墨烯的方法,以及使用其的石墨烯装置

    公开(公告)号:US09586826B2

    公开(公告)日:2017-03-07

    申请号:US14314153

    申请日:2014-06-25

    Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.

    Abstract translation: 公开了通过使用Cu / Ni多层金属催化剂生长高质量单层石墨烯的方法和使用其的石墨烯装置。 该方法通过使用Cu / Ni多层金属催化剂来控制和生长高质量的单层石墨烯,其中在下列情况下,固定有镍下层的厚度和铜上层的厚度,在石墨烯为 通过CVD法生长。 根据该方法,可以通过利用高品质的单层石墨烯来获得高品质的单层石墨烯,并提高石墨烯应用装置的性能,从而对石墨烯应用装置的工业化起到非常重要的作用。

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
    发光二极管及其制造方法

    公开(公告)号:US20160099386A1

    公开(公告)日:2016-04-07

    申请号:US14969568

    申请日:2015-12-15

    Abstract: A light emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a p-type semiconductor layer disposed on the active layer; a first electrode disposed on the p-type semiconductor layer and made of a metal oxide; a second electrode disposed on the first electrode and made of graphene; a p-type electrode disposed on the second electrode; and an n-type electrode disposed on the n-type semiconductor layer, wherein a work function of the first electrode is less than a work function of the p-type semiconductor layer, but is greater than a to work function of the second electrode.

    Abstract translation: 发光二极管包括:基板; 设置在所述基板上的n型半导体层; 设置在所述n型半导体层上的有源层; 设置在有源层上的p型半导体层; 设置在所述p型半导体层上并由金属氧化物构成的第一电极; 设置在第一电极上并由石墨烯制成的第二电极; 设置在所述第二电极上的p型电极; 以及设置在n型半导体层上的n型电极,其中第一电极的功函数小于p型半导体层的功函数,但大于第二电极的功函数。

    GRAPHENE PHOTONIC DEVICE
    6.
    发明申请
    GRAPHENE PHOTONIC DEVICE 有权
    石墨光电器件

    公开(公告)号:US20140105553A1

    公开(公告)日:2014-04-17

    申请号:US13794582

    申请日:2013-03-11

    CPC classification number: G02B6/02 G02F1/011 G02F1/0136 G02F2203/10

    Abstract: Provided is a graphene optical device. The optical device includes a lower clad, an optical waveguide extended on the lower clad in a first direction, a first dielectric layer disposed on the optical waveguide, and a graphene layer extended on the first dielectric layer in a second direction.

    Abstract translation: 提供了一种石墨烯光学器件。 光学器件包括下包层,在第一方向上延伸在下包层上的光波导,设置在光波导上的第一介电层和在第二方向上延伸在第一介电层上的石墨烯层。

    GRAPHENE NANORIBBON SENSOR
    10.
    发明申请
    GRAPHENE NANORIBBON SENSOR 有权
    石墨纳米尼班传感器

    公开(公告)号:US20140103296A1

    公开(公告)日:2014-04-17

    申请号:US13797703

    申请日:2013-03-12

    CPC classification number: G01N27/414 B82Y15/00 B82Y40/00 G01N27/127

    Abstract: Provided is a graphene nanoribbon sensor. The sensor includes a substrate, a graphene layer formed on the substrate in a first direction, and an upper dielectric layer on the graphene layer. Here, the graphene layer may have a plurality of electrode regions respectively separated in the first direction and a channel between the plurality of electrode regions.

    Abstract translation: 提供了一种石墨烯纳米纤维传感器。 传感器包括基板,在第一方向上形成在基板上的石墨烯层和石墨烯层上的上介电层。 这里,石墨烯层可以具有分别在第一方向上分离的多个电极区域和多个电极区域之间的沟道。

Patent Agency Ranking