公开(公告)号：US11382244B2

公开(公告)日：2022-07-05

申请号：US16566221

申请日：2019-09-10

Applicant: Electronics and Telecommunications Research Institute

Inventor： Seong Jun Kim ,  Choon Gi Choi ,  Tam Van Nguyen ,  Bok Ki Min ,  Shuvra Mondal ,  Yoonsik Yi

IPC: H05K9/00 ,  G01L1/22 ,  G01K7/22 ,  B82Y15/00 ,  B82Y30/00

Abstract: Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.

公开(公告)号：US11002619B2

公开(公告)日：2021-05-11

申请号：US16389473

申请日：2019-04-19

Applicant: Electronics and Telecommunications Research Institute

Inventor： Seong Jun Kim ,  Choon-Gi Choi ,  Shuvra Mondal

IPC: G01L1/22 ,  G01L9/00

Abstract: Provided is a pressure-strain sensor including a graphene structure having a three-dimensional porous structure, planar sheets provided on a surface of the graphene structure, and a polymer layer configured to cover the graphene structure and the planar sheets, wherein each of the planar sheets contains a transition metal chalcogenide compound.