公开(公告)号：US09614110B2

公开(公告)日：2017-04-04

申请号：US15072228

申请日：2016-03-16

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jin Tae Kim ,  Choon Gi Choi ,  Young Jun Yu ,  Kwang Hyo Chung ,  Jin Sik Choi ,  Hong Kyw Choi

IPC: H01L31/02 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/101

CPC classification number: H01L31/028 ,  H01L31/03529 ,  H01L31/09 ,  H01L31/101 ,  Y02E10/547

Abstract: Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer graphene formed at one part of an upper end of the insulating layer and formed in one layer; a multi-layer graphene formed at the other part of the upper end of the insulating layer and formed in multiple layers; a first electrode formed at an end of the single-layer graphene; and a second electrode formed at an end of the multi-layer graphene.

公开(公告)号：US09586826B2

公开(公告)日：2017-03-07

申请号：US14314153

申请日：2014-06-25

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jin Sik Choi ,  Hong Kyw Choi ,  Ki Chul Kim ,  Young Jun Yu ,  Jin Soo Kim ,  Choon Gi Choi

IPC: C01B31/04 ,  H01L21/04

CPC classification number: C01B31/0453 ,  C01B32/186 ,  H01L21/0425 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.

Abstract translation: 公开了通过使用Cu / Ni多层金属催化剂生长高质量单层石墨烯的方法和使用其的石墨烯装置。 该方法通过使用Cu / Ni多层金属催化剂来控制和生长高质量的单层石墨烯，其中在下列情况下，固定有镍下层的厚度和铜上层的厚度，在石墨烯为 通过CVD法生长。 根据该方法，可以通过利用高品质的单层石墨烯来获得高品质的单层石墨烯，并提高石墨烯应用装置的性能，从而对石墨烯应用装置的工业化起到非常重要的作用。

公开(公告)号：US09425335B2

公开(公告)日：2016-08-23

申请号：US14297946

申请日：2014-06-06

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jin Tae Kim ,  Young Jun Yu ,  Hong Kyw Choi ,  Choon Gi Choi

IPC: H01L31/028 ,  H01L31/0224

CPC classification number: H01L31/028 ,  G02B6/12004 ,  G02B6/1226 ,  G02B2006/12123 ,  H01L31/0224 ,  H01L31/036 ,  H01L31/09 ,  Y02E10/547

Abstract: Disclosed is an optical detector. The optical detector includes: a first dielectric layer; a graphene optical transmission line formed on the first dielectric layer; a graphene optical detector formed on the first dielectric layer and configured to detect light transmitted along the graphene optical transmission line; electric wires formed on the graphene optical detector; metal pads positioned at both ends of the graphene optical detector and connected with the electric wires; and a second dielectric layer formed on the graphene optical transmission line, in which the graphene optical detector detects an intensity of light incident in a horizontal direction with respect to a surface of the graphene optical transmission line.

Abstract translation: 公开了一种光学检测器。 光检测器包括：第一电介质层; 形成在第一介电层上的石墨烯光传输线; 石墨烯光学检测器，其形成在所述第一介电层上并且被配置为检测沿着所述石墨烯光传输线传输的光; 在石墨烯光学检测器上形成的电线; 金属焊盘位于石墨烯光学检测器的两端并与电线连接; 以及形成在所述石墨烯光传输线上的第二电介质层，其中所述石墨烯光检测器检测相对于所述石墨烯光传输线的表面沿水平方向入射的光的强度。

公开(公告)号：US10138513B2

公开(公告)日：2018-11-27

申请号：US14554863

申请日：2014-11-26

Applicant: Electronics and Telecommunications Research Institute

Inventor： Kwang Hyo Chung ,  Jin Tae Kim ,  Yo Han Choi ,  Choon Gi Choi ,  Hong Kyw Choi ,  Young Jun Yu ,  Doo Hyeb Youn ,  Jin Sik Choi

IPC: B01L7/00 ,  H05B3/14 ,  H05B3/42 ,  C12Q1/686 ,  G01N21/64

Abstract: Provided is a gene amplifying and detecting device. The gene amplifying and detecting device includes: a gene amplifying chip including a chamber formed therein; a reaction solution filled in the chamber and including a fluorescent material; a light source located at one side of the gene amplifying chip; a light detector located at the other side of the gene amplifying chip; and a graphene heater formed on an inner surface or outer surface of the gene amplifying chip so as to heat the reaction solution.

公开(公告)号：US09275860B2

公开(公告)日：2016-03-01

申请号：US14258416

申请日：2014-04-22

Applicant: Electronics and Telecommunications Research Institute

Inventor： Young Jun Yu ,  Jin Soo Kim ,  Hong Kyw Choi ,  Jin Sik Choi ,  Jin Tae Kim ,  Kwang Hyo Chung ,  Doo Hyeb Youn ,  Choon Gi Choi

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/778 ,  H01L29/24

CPC classification number: H01L21/02628 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02568 ,  H01L21/0259 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/778

Abstract: A method of manufacturing a junction electronic device having a 2-Dimensional (2D) material as a channel, includes forming a pattern portion by surface-treating a substrate so that the patterned portion has a higher surface potential than other portions of the substrate; bonding a 2D material to rthe patterned portion having the higher surface potential by spraying a liquid including 2D material flakes onto the substrate; forming a pair of first electrodes in contact with both ends of the 2D material disposed on the substrate; forming a dielectric layer on the first electrodes and the 2D material; and forming a second electrode on the dielectric layer. The 2D materials are disposed at desired positions by chemical exfoliation.

Abstract translation: 制造具有二维（2D）材料作为通道的结电子器件的方法包括通过对衬底进行表面处理形成图形部分，使得图案化部分具有比衬底的其它部分更高的表面电位; 通过将包括2D材料薄片的液体喷涂到基底上，将2D材料结合到具有较高表面电位的图案化部分; 形成与设置在所述基板上的所述2D材料的两端接触的一对第一电极; 在所述第一电极和所述2D材料上形成介电层; 以及在所述电介质层上形成第二电极。 通过化学剥离将2D材料设置在期望的位置。