Manufacturing method for fiber reinforced silicon ceramics sintered body
    1.
    发明授权
    Manufacturing method for fiber reinforced silicon ceramics sintered body 失效
    纤维增强硅陶瓷烧结体的制造方法

    公开(公告)号:US4753764A

    公开(公告)日:1988-06-28

    申请号:US534143

    申请日:1983-09-21

    CPC classification number: C04B35/584 C04B35/565 C04B35/806 F02B3/06

    Abstract: A method for manufacturing a fiber reinforced silicon carbide or silicon nitride ceramic sintered body having silicon carbide or silicon nitride ceramic whiskers dispersed therein, which method involves mixing together silicon carbide or silicon nitride ceramic powder, whisker formation agents made up of at least one material selected from metal Si or an inorganic compound containing Si, an organic containing Si, amorphous silicon ceramic powder or a mixture of SiO.sub.2 and carbon, or Si, sintering additives, and a whisker accelerating amount of a whisker formation accelerator selected from Fe, Ni, Co, Cr, V, Ti, Ta, W or Mo; molding the mixture into a predetermined shape; heat treating the molded body at a temperature of 1300.degree. C. to 1750.degree. C. to produce silicon carbide or silicon nitride whiskers in the molded body and thereafter densifying and sintering the molded body at sintering temperatures in a non-oxidizing atmosphere. The silicon carbide and silicon nitride ceramics produced by said method have excellent heat-resistance characteristics and excellent impact and corrosion resistance, thus making these ceramics eminently suitable for structural materials where these properties are required.

    Abstract translation: 一种制造分散有碳化硅或氮化硅陶瓷晶须的纤维增强碳化硅或氮化硅陶瓷烧结体的方法,该方法包括将碳化硅或氮化硅陶瓷粉末混合在一起,将至少一种材料制成的晶须形成剂 来自金属Si或含Si的无机化合物,含有有机物的Si,非晶硅陶瓷粉末或SiO 2与碳的混合物,Si,烧结助剂和晶须加速量的选自Fe,Ni,Co的晶须形成促进剂 ,Cr,V,Ti,Ta,W或Mo; 将混合物成型为预定的形状; 在1300℃至1750℃的温度下对成型体进行热处理,以在成型体中制造碳化硅或氮化硅晶须,然后在非氧化性气氛中的烧结温度下使成型体致密化并烧结。 通过该方法制造的碳化硅和氮化硅陶瓷具有优异的耐热特性和优异的耐冲击和耐腐蚀性,因此这些陶瓷特别适用于需要这些性能的结构材料。

    Electrically-conductive sintered compact of silicon nitride machinable
by electrical discharge machining and process of producing the same
    2.
    发明授权
    Electrically-conductive sintered compact of silicon nitride machinable by electrical discharge machining and process of producing the same 失效
    通过放电加工可加工的氮化硅导电性烧结体及其制造方法

    公开(公告)号:US4659508A

    公开(公告)日:1987-04-21

    申请号:US794675

    申请日:1985-11-04

    CPC classification number: C04B35/584 C04B35/593

    Abstract: An electrically-conductive sintered compact of silicon nitride which is machinable by electrical discharge machining and a process to produce the same. TiN and/or TiC powder is added to a powder of silicon nitride in an amount 15-40% by volume to act as a conductivity-supplying agent while 0.01-3.0% by volume MgO and/or Al.sub.2 O.sub.3 powder is added as a sintering assistant. The mixed powders are then preformed in a desired shape and sintered in a nonoxidizing environment at 1,600.degree. C.-2,000.degree. C. to obtain a compact of silicon-nitride machinable by electrical discharge machining due to its electrical conductivity being at least 1 S.multidot.cm.sup.-1.

    Abstract translation: 可通过放电加工机加工的氮化硅导电烧结体及其制造方法。 将TiN和/或TiC粉末加入15-40体积%的氮化硅粉末中,作为导电性供给剂,同时添加0.01-3.0体积%的MgO和/或Al 2 O 3粉末作为烧结助剂 。 然后将混合粉末预成形为所需形状,并在1600℃-2000℃的非氧化环境中烧结,得到可通过放电加工机加工的氮化硅致密体,因为其导电率至少为1Sxcm- 1。

    Method of hot rolling copper
    3.
    发明授权
    Method of hot rolling copper 失效
    热轧铜的方法

    公开(公告)号:US4777822A

    公开(公告)日:1988-10-18

    申请号:US127592

    申请日:1987-12-03

    CPC classification number: C04B35/597 C04B35/584

    Abstract: The present invention relates to a method of hot rolling copper or copper alloys such as copper wires and coppr plates. The present invention has succeeded in remarkably prolonging useful life of the tools used for hot rolling, and improving the surface quality of the rolled products by replacing the conventional methods of hot rolling copper using tools made of cemented carbide, die steel, high-speed steel, etc. by a method using tolls made essentially of Si.sub.3 N.sub.4. Si.sub.3 N.sub.4 tools used in the present invention contain at least one kind of sintering aid selected from the group consisting of Al.sub.2 O.sub.3, AlN, MgO, Y.sub.2 O.sub.3 and ZrO.sub.2, have a sintering density of 90% or more, Rockwell hardness of 88 or more and an average particle diameter of 2.mu. or less, and contain .beta.-type Si.sub.3 N.sub.4 as a main ingredient.

    Abstract translation: 本发明涉及一种热轧铜或铜合金如铜线和铜板的方法。 本发明成功地延长了用于热轧的工具的使用寿命,并且通过使用由硬质合金,模具钢,高速钢制成的工具代替热轧铜的常规方法来提高轧制品的表面质量 等等,通过使用基本上由Si 3 N 4制成的费用的方法。 本发明中使用的Si 3 N 4工具包含至少一种选自Al 2 O 3,AlN,MgO,Y 2 O 3和ZrO 2的烧结助剂,烧结密度为90%以上,洛氏硬度为88以上,平均粒径为 粒径为2μm以下,含有β型Si 3 N 4为主要成分。

    Process for the production of ceramics
    4.
    发明授权
    Process for the production of ceramics 失效
    陶瓷生产工艺

    公开(公告)号:US4702869A

    公开(公告)日:1987-10-27

    申请号:US920908

    申请日:1986-10-17

    CPC classification number: C04B35/584 C04B35/565 C04B35/64

    Abstract: Less dispersion and more homogenized ceramics are produced by sintering ceramic materials, in particular, containing silicon nitride or silicon carbide as a predominant component with other assistants or additives, machining the surface of the resulting sintered compact and then subjecting the sintered compact to a heat treatment for homogenizing in a non-oxidizing atmosphere such as nitrogen or argon gas at a temperature of from the mass-transfer temperature at which the mass-transfer takes place in the interior of the ceramics to blunt the fine point of a crack to the sintering temperature of the ceramics.

    Abstract translation: 通过烧结陶瓷材料,特别是将氮化硅或碳化硅作为主要成分与其它辅助剂或添加剂进行烧结来制备较少的分散体和更均质化的陶瓷,对所得烧结体的表面进行机械加工,然后对烧结体进行热处理 在非氧化性气氛如氮气或氩气中,在陶瓷内部发生质量传递的质量传递温度,使裂纹的细微点钝化至烧结温度 的陶瓷。

    Control unit of flash memory and facsimile machine using such control
unit
    7.
    发明授权
    Control unit of flash memory and facsimile machine using such control unit 失效
    控制单元的闪存和传真机使用这种控制单元

    公开(公告)号:US5500742A

    公开(公告)日:1996-03-19

    申请号:US74536

    申请日:1993-06-11

    Applicant: Eiji Kamijo

    Inventor: Eiji Kamijo

    CPC classification number: G11C16/102 H04N1/32363

    Abstract: A control unit controls the use of a flash memory in which a recording area is divided into a plurality of blocks. The control unit includes a SRAM for storing management information regarding history that blocks have been used for recording information, the management information being updated every time each block has been used, and a selecting controller for selecting, with reference to the management information stored in the SRAM, a block in which information is to be written from among the plurality of blocks in the recording area of the flash memory so that all the blocks of the flash memory are uniformly used, wherein the information is recorded in the block selected by the selecting means in the flash memory. A facsimile machine has the flash memory for temporally recording image data to be transmitted and/or received, and the above control unit for controlling the flash memory so that the image data is recorded in a block of the flash memory.

    Abstract translation: 控制单元控制将记录区域划分成多个块的闪速存储器的使用。 控制单元包括一个SRAM,用于存储关于已被用于记录信息的块的历史的管理信息,每次块被使用时更新管理信息;以及选择控制器,用于参考存储在 SRAM,其中要从快闪存储器的记录区域中的多个块中写入信息的块,使得均匀地使用闪速存储器的所有块,其中该信息被记录在通过选择选择的块中 意味着在闪存中。 传真机具有用于暂时记录要发送和/或接收的图像数据的闪存,以及用于控制闪速存储器的上述控制单元,使得图像数据被记录在闪速存储器的块中。

    Coated material and X-ray exposure mask
    10.
    发明授权
    Coated material and X-ray exposure mask 失效
    涂层材料和X射线曝光面膜

    公开(公告)号:US4866746A

    公开(公告)日:1989-09-12

    申请号:US92537

    申请日:1987-09-03

    CPC classification number: G21F1/08 C23C14/0641 C23C14/0647 C23C16/34

    Abstract: A coated material comprises: a substrate; and a film containing boron, nitrogen and one selected from a group consisting of silicon and germanium, the film being formed on the substrate. An X-ray exposure mask of the present invention comprises: an X-ray absorbent layer; an X-ray permeable support layer for supporting the absorbent layer; and a mask support member for supporting the support layer; wherein the support layer contains boron and nitrogen and one element selected from a group consisting of silicon and germanium.

    Abstract translation: 涂覆材料包括:基材; 以及含有硼,氮和选自硅和锗的一种的膜,该膜形成在基板上。 本发明的X射线曝光掩模包括:X射线吸收层; 用于支撑吸收层的X射线透过支撑层; 以及用于支撑所述支撑层的掩模支撑构件; 其中所述载体层含有硼和氮,以及一种选自硅和锗的元素。

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