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    Memory cell with resistance-switching layers
    6.
    发明授权
    Memory cell with resistance-switching layers 有权
    具有电阻切换层的存储单元

    公开(公告)号：US08737111B2

    公开(公告)日：2014-05-27

    申请号：US13157191

    申请日：2011-06-09

    Applicant: Franz Kreupl ,  Xiying Costa ,  James Kai ,  Raghuveer S. Makala

    Inventor： Franz Kreupl ,  Xiying Costa ,  James Kai ,  Raghuveer S. Makala

    IPC: G11C11/00

    CPC classification number: H01L27/2409 ,  G11C11/16 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146

    Abstract: A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an electric field is applied across the first and second electrodes. An ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.

    Abstract translation: 3-D读写存储器中的存储器件包括存储器单元。 每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。 第一和第二电阻切换层都可以具有双极或单极开关特性。 在存储单元的置位或复位操作中，跨越第一和第二电极施加电场。 离子电流在电阻切换层中流动，有助于切换机构。 由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。 提供了用于RSME不同层的材料和材料的组合。

    Memory Cell With Resistance-Switching Layers
    8.
    发明申请
    Memory Cell With Resistance-Switching Layers 有权
    具有电阻切换层的存储单元

    公开(公告)号：US20110310653A1

    公开(公告)日：2011-12-22

    申请号：US13157191

    申请日：2011-06-09

    Applicant: Franz Kreupl ,  Xiying Costa ,  James Kai ,  Raghuveer S. Makala

    Inventor： Franz Kreupl ,  Xiying Costa ,  James Kai ,  Raghuveer S. Makala

    IPC: G11C11/00 ,  H01L45/00

    CPC classification number: H01L27/2409 ,  G11C11/16 ,  G11C11/1659 ,  G11C13/0007 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146

    Abstract: A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an electric field is applied across the first and second electrodes. An ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.

    Abstract translation: 3-D读写存储器中的存储器件包括存储器单元。 每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。 第一和第二电阻切换层都可以具有双极或单极开关特性。 在存储单元的置位或复位操作中，跨越第一和第二电极施加电场。 离子电流在电阻切换层中流动，有助于切换机构。 由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。 提供了用于RSME不同层的材料和材料的组合。

    Resistive memory devices with improved resistive changing elements
    9.
    发明授权
    Resistive memory devices with improved resistive changing elements 有权
    具有改进的电阻变化元件的电阻式存储器件

    公开(公告)号：US08742387B2

    公开(公告)日：2014-06-03

    申请号：US12145608

    申请日：2008-06-25

    Applicant: Thomas Happ ,  Franz Kreupl ,  Jan Boris Philipp ,  Petra Majewski

    Inventor： Thomas Happ ,  Franz Kreupl ,  Jan Boris Philipp ,  Petra Majewski

    IPC: H01L47/00 ,  H01L45/00

    CPC classification number: H01L45/1253 ,  G11C13/0004 ,  G11C2213/79 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/141 ,  H01L45/146

    Abstract: An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.

    Abstract translation: 集成电路包括具有电阻变化存储元件的存储单元。 电阻变化存储元件包括第一电极，第二电极和设置在第一和第二电极之间的电阻率变化材料，其中电阻率变化材料被配置为响应于施加电压或电流而改变电阻状态 和第二电极。 此外，第一电极和第二电极中的至少一个包括绝缘体材料，其包括形成在绝缘体材料内的自组装导电元件。 形成在绝缘体材料内的自组装导电元件在将电阻率变化材料切换到不同电阻状态的整个操作期间保持稳定。

    P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT
    10.
    发明申请
    P-/METAL FLOATING GATE NON-VOLATILE STORAGE ELEMENT 有权
    P- /金属浮动门非易失存储元件

    公开(公告)号：US20120243337A1

    公开(公告)日：2012-09-27

    申请号：US13153964

    申请日：2011-06-06

    Applicant: Sanghyun Lee ,  Mohan Dunga ,  Masaaki Higashitani ,  Tuan Pham ,  Franz Kreupl

    Inventor： Sanghyun Lee ,  Mohan Dunga ,  Masaaki Higashitani ,  Tuan Pham ,  Franz Kreupl

    IPC: G11C16/10 ,  G11C16/04 ,  H01L21/336 ,  H01L29/788

    CPC classification number: H01L21/28273 ,  H01L27/11524 ,  H01L27/11529 ,  H01L29/42324

    Abstract: Non-volatile storage elements having a P−/metal floating gate are disclosed herein. The floating gate may have a P− region near the tunnel oxide, and may have a metal region near the control gate. A P− region near the tunnel oxide helps provide good data retention. A metal region near the control gate helps to achieve a good coupling ratio between the control gate and floating gate. Therefore, programming of non-volatile storage elements is efficient. Also, erasing the non-volatile storage elements may be efficient. In some embodiments, having a P− region near the tunnel oxide (as opposed to a strongly doped p-type semiconductor) may improve erase efficiency relative to P+.

    Abstract translation: 本文公开了具有P- /金属浮动栅极的非易失性存储元件。 浮栅可以在隧道氧化物附近具有P-区域，并且可以在控制栅极附近具有金属区域。 隧道氧化物附近的P-区域有助于提供良好的数据保留。 控制栅极附近的金属区域有助于实现控制栅极和浮动栅极之间良好的耦合比。 因此，非易失性存储元件的编程是有效的。 此外，擦除非易失性存储元件可能是有效的。 在一些实施例中，在隧道氧化物附近具有P-区（与强掺杂p型半导体相反）可提高相对于P +的擦除效率。

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