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公开(公告)号：US20060228645A1
公开(公告)日：2006-10-12
申请号：US11103134
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03C1/00
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/0382 , Y10S430/106
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator
摘要翻译： 本发明涉及一种光刻胶组合物，其适用于作为负性光致抗蚀剂的成像曝光和显影，其包含负性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度 大于5微米。 负光致抗蚀剂组合物选自（1）包含（i）树脂粘合剂，（ii）光致酸产生剂和（iii）交联剂）的组合物; 或（2）组合物，其包含（i）树脂粘合剂，（ii）任选的可加成聚合的烯属不饱和化合物和（iii）光引发剂; 或（3）包含（i）含有至少两个侧链不饱和基团的光聚合化合物的组合物; （ii）烯属不饱和光聚合聚环氧烷亲水化合物; 和（iii）光引发剂
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公开(公告)号：US20060228644A1
公开(公告)日：2006-10-12
申请号：US11103093
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03C1/00
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0392 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/151
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.
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公开(公告)号：US07524606B2
公开(公告)日：2009-04-28
申请号：US11103093
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0392 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/151
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.
摘要翻译： 本发明涉及适用于作为正性光致抗蚀剂的成像曝光和显影的光致抗蚀剂组合物，其包含正性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度 大于5微米。 正光致抗蚀剂组合物可以选自（1）包含（i）具有酸不稳定基团的成膜树脂和（ii）光酸产生剂的组合物的组合物，或（2）包含（i）成膜酚醛清漆 树脂，和（ii）光活性化合物，或（3）包含（i）成膜树脂，（ii）光致酸发生剂和（iii）溶解抑制剂的组合物。
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公开(公告)号：US20070141510A1
公开(公告)日：2007-06-21
申请号：US11627545
申请日：2007-01-26
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03C1/00
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/0382 , Y10S430/106
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator
摘要翻译： 本发明涉及一种光刻胶组合物，其适用于作为负性光致抗蚀剂的成像曝光和显影，其包含负性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度 大于5微米。 负光致抗蚀剂组合物选自（1）包含（i）树脂粘合剂，（ii）光致酸产生剂和（iii）交联剂）的组合物; 或（2）包含（i）树脂粘合剂，（ii）任选的可加成聚合的烯属不饱和化合物和（iii）光引发剂的组合物; 或（3）包含（i）含有至少两个侧链不饱和基团的光聚合化合物的组合物; （ii）烯属不饱和光聚合聚环氧烷亲水化合物; 和（iii）光引发剂
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公开(公告)号：US07247419B2
公开(公告)日：2007-07-24
申请号：US11103134
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/0382 , Y10S430/106
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator.
摘要翻译： 本发明涉及一种光刻胶组合物，其适用于作为负性光致抗蚀剂的成像曝光和显影，其包含负性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度 大于5微米。 负光致抗蚀剂组合物选自（1）包含（i）树脂粘合剂，（ii）光致酸产生剂和（iii）交联剂）的组合物; 或（2）组合物，其包含（i）树脂粘合剂，（ii）任选的可加成聚合的烯属不饱和化合物和（iii）光引发剂; 或（3）包含（i）含有至少两个侧链不饱和基团的光聚合化合物的组合物; （ii）烯属不饱和光聚合聚环氧烷亲水化合物; 和（iii）光引发剂。
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公开(公告)号：US07078157B2
公开(公告)日：2006-07-18
申请号：US10376356
申请日：2003-02-27
CPC分类号： G03F7/033 , Y10S430/117
摘要： A composition that comprises a photopolymerizable compound containing at least two pendant unsaturated groups; at least one ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic monomer; at least one nonionic surfactant; and at least one photoinitiator is provided. The composition also preferably contains at least one amine modified acrylic oligomer and a dye. Other conventional photoresist components such as photosensitizers, adhesion promoters, leveling agents and solvents may also be included in the composition. Such compositions are useful for forming a pattern on a substrate, such as patterning microlithographic circuits on a substrate.
摘要翻译： 一种组合物，其包含含有至少两个侧链不饱和基团的光聚合化合物; 至少一种烯键式不饱和光聚合聚环氧烷亲水单体; 至少一种非离子表面活性剂; 并提供至少一种光引发剂。 组合物还优选含有至少一种胺改性的丙烯酸低聚物和染料。 其他常规光致抗蚀剂组分如光敏剂，粘合促进剂，流平剂和溶剂也可以包括在组合物中。 这样的组合物可用于在基底上形成图案，例如在基底上图案化微光刻电路。
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公开(公告)号：US20070298349A1
公开(公告)日：2007-12-27
申请号：US11425813
申请日：2006-06-22
申请人： Ruzhi Zhang , Mark O. Neisser , Woo-Kyu Kim , David J. Abdallah , Francis Houlihan , Ping-Hung Lu , Hong Zhuang
发明人： Ruzhi Zhang , Mark O. Neisser , Woo-Kyu Kim , David J. Abdallah , Francis Houlihan , Ping-Hung Lu , Hong Zhuang
IPC分类号： G03C1/00
CPC分类号： C09D183/04 , G03F7/038 , G03F7/0757 , G03F7/091 , H01L21/02126 , H01L21/02216 , H01L21/02282
摘要： The present invention relates to a novel antireflective coating composition for forming an underlayer for a photoresist comprising an acid generator and a novel siloxane polymer, where the siloxane polymer comprises at least one absorbing chromophore and at least one self-crosslinking functionality of structure (1), where m is 0 or 1, W and W′ are independently a valence bond or a connecting group linking the cyclic ether to the silicon of the polymer and L is selected from hydrogen, W′ and W, or L and W′ are combined to comprise a cycloaliphatic linking group linking the cyclic ether to the silicon of the polymer. The invention also relates to a process for imaging the photoresist coated over the novel antireflective coating composition and provides good lithographic results. The invention further relates to a novel siloxane polymer, where the siloxane polymer comprises at least one absorbing chromophore and at least one self-crosslinking functionality of structure (1).
摘要翻译： 本发明涉及一种用于形成光致抗蚀剂底层的新型抗反射涂料组合物，其包含酸产生剂和新型硅氧烷聚合物，其中硅氧烷聚合物包含至少一种吸收发色团和至少一种结构（1）的自交联官能团， 其中m为0或1，W和W'独立地为价键或连接环状醚与聚合物硅的连接基团，L选自氢，W'和W，或L和W'组合 包括将环醚与聚合物的硅连接的脂环族连接基团。 本发明还涉及一种用于对涂覆在新型抗反射涂料组合物上的光致抗蚀剂进行成像的方法，并提供良好的光刻结果。 本发明还涉及新的硅氧烷聚合物，其中硅氧烷聚合物包含至少一种吸收发色团和至少一种结构（1）的自交联官能团。
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公开(公告)号：US08026201B2
公开(公告)日：2011-09-27
申请号：US11619208
申请日：2007-01-03
申请人： Ruzhi Zhang , Ping-Hung Lu
发明人： Ruzhi Zhang , Ping-Hung Lu
摘要： The invention relates to compositions and methods of removing silicon-based anti-reflective coatings/hardmask layers.
摘要翻译： 本发明涉及去除硅基抗反射涂层/硬掩模层的组合物和方法。
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公开(公告)号：US20080161217A1
公开(公告)日：2008-07-03
申请号：US11619208
申请日：2007-01-03
申请人： Ruzhi Zhang , Ping-Hung Lu
发明人： Ruzhi Zhang , Ping-Hung Lu
IPC分类号： G03F7/00
摘要： The invention relates to compositions and methods of removing silicon-based anti-reflective coatings/hardmask layers.
摘要翻译： 本发明涉及去除硅基抗反射涂层/硬掩模层的组合物和方法。
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公开(公告)号：US5977288A
公开(公告)日：1999-11-02
申请号：US128900
申请日：1998-08-04
申请人： M. Dalil Rahman , Ping-Hung Lu
发明人： M. Dalil Rahman , Ping-Hung Lu
CPC分类号： C08G8/08 , C08G16/0293 , G03F7/0236
摘要： The present invention provides a method for producing a film forming, fractionated novolak resin having consistent molecular weight and superior performance in photoresist composition, by isolating such novolak resin fractions without high temperature distillation. A method is also provided for producing photoresist composition from such a fractionated novolak resin and for producing semiconductor devices using such a photoresist composition.
摘要翻译： 本发明提供一种通过在不进行高温蒸馏的情况下分离这些酚醛清漆树脂部分来制备具有一致的分子量和光致抗蚀剂组合物性能优异的成膜分级酚醛清漆树脂的方法。 还提供了一种从这种分级酚醛清漆树脂制备光致抗蚀剂组合物并用于制备使用这种光致抗蚀剂组合物的半导体器件的方法。
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