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1.发明申请NANOCOMPOSITE POSITIVE PHOTOSENSITIVE COMPOSITION AND USE THEREOF 审中-公开NANOCOMPOSITE POSITIVE PHOSOSTIC COMPOSITION及其用途公开(公告)号：US20130108956A1
公开(公告)日：2013-05-02
申请号：US13286712
申请日：2011-11-01
申请人： Ping-Hung LU , Chunwei CHEN , Stephen MEYER
发明人： Ping-Hung LU , Chunwei CHEN , Stephen MEYER
CPC分类号： G03F7/0047 , G03F7/039 , G03F7/0392 , G03F7/405
摘要： The present invention relates to a positive photosensitive composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is less than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor. The invention also relates to a process of forming an image using the novel photosensitive composition.
摘要翻译： 本发明涉及适用于作为正性光致抗蚀剂的成像曝光和显影的正型光敏组合物，其包含正性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂层的厚度 薄膜小于5微米。 正光致抗蚀剂组合物可以选自（1）包含（i）具有酸不稳定基团的成膜树脂和（ii）光酸产生剂的组合物的组合物，或（2）包含（i）成膜酚醛清漆 树脂，和（ii）光活性化合物，或（3）包含（i）成膜树脂，（ii）光致酸发生剂和（iii）溶解抑制剂的组合物。 本发明还涉及使用新颖的光敏组合物形成图像的方法。
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公开(公告)号：US08026201B2
公开(公告)日：2011-09-27
申请号：US11619208
申请日：2007-01-03
申请人： Ruzhi Zhang , Ping-Hung Lu
发明人： Ruzhi Zhang , Ping-Hung Lu
摘要： The invention relates to compositions and methods of removing silicon-based anti-reflective coatings/hardmask layers.
摘要翻译： 本发明涉及去除硅基抗反射涂层/硬掩模层的组合物和方法。
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公开(公告)号：US20080161217A1
公开(公告)日：2008-07-03
申请号：US11619208
申请日：2007-01-03
申请人： Ruzhi Zhang , Ping-Hung Lu
发明人： Ruzhi Zhang , Ping-Hung Lu
IPC分类号： G03F7/00
摘要： The invention relates to compositions and methods of removing silicon-based anti-reflective coatings/hardmask layers.
摘要翻译： 本发明涉及去除硅基抗反射涂层/硬掩模层的组合物和方法。
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公开(公告)号：US20060228644A1
公开(公告)日：2006-10-12
申请号：US11103093
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03C1/00
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0392 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/151
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.
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公开(公告)号：US5977288A
公开(公告)日：1999-11-02
申请号：US128900
申请日：1998-08-04
申请人： M. Dalil Rahman , Ping-Hung Lu
发明人： M. Dalil Rahman , Ping-Hung Lu
CPC分类号： C08G8/08 , C08G16/0293 , G03F7/0236
摘要： The present invention provides a method for producing a film forming, fractionated novolak resin having consistent molecular weight and superior performance in photoresist composition, by isolating such novolak resin fractions without high temperature distillation. A method is also provided for producing photoresist composition from such a fractionated novolak resin and for producing semiconductor devices using such a photoresist composition.
摘要翻译： 本发明提供一种通过在不进行高温蒸馏的情况下分离这些酚醛清漆树脂部分来制备具有一致的分子量和光致抗蚀剂组合物性能优异的成膜分级酚醛清漆树脂的方法。 还提供了一种从这种分级酚醛清漆树脂制备光致抗蚀剂组合物并用于制备使用这种光致抗蚀剂组合物的半导体器件的方法。
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公开(公告)号：US5863700A
公开(公告)日：1999-01-26
申请号：US939253
申请日：1997-09-29
申请人： M. Dalil Rahman , Ping-Hung Lu
发明人： M. Dalil Rahman , Ping-Hung Lu
IPC分类号： G03F7/004 , C08G8/00 , C08G8/08 , C08G8/10 , C08G8/20 , C08L61/08 , G03F7/023 , G03F7/039 , G03C5/00
CPC分类号： G03F7/0236 , C08G8/08 , C08G8/10 , C08G8/20
摘要： The present invention provides a method for producing a water insoluble, aqueous alkali soluble novolak resins having consistent molecular weight and superior performance in photoresist composition, by isolating such novolak resin without high temperature distillation. A method is also provided for producing photoresist composition from such a novolak resin and for producing semiconductor devices using such a photoresist composition.
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公开(公告)号：US07524606B2
公开(公告)日：2009-04-28
申请号：US11103093
申请日：2005-04-11
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
CPC分类号： G03F7/0226 , G03F7/0047 , G03F7/0392 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/151
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.
摘要翻译： 本发明涉及适用于作为正性光致抗蚀剂的成像曝光和显影的光致抗蚀剂组合物，其包含正性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度 大于5微米。 正光致抗蚀剂组合物可以选自（1）包含（i）具有酸不稳定基团的成膜树脂和（ii）光酸产生剂的组合物的组合物，或（2）包含（i）成膜酚醛清漆 树脂，和（ii）光活性化合物，或（3）包含（i）成膜树脂，（ii）光致酸发生剂和（iii）溶解抑制剂的组合物。
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公开(公告)号：US07255970B2
公开(公告)日：2007-08-14
申请号：US11179364
申请日：2005-07-12
申请人： Medhat A. Toukhy , Ping-Hung Lu , Salem K. Mullen
发明人： Medhat A. Toukhy , Ping-Hung Lu , Salem K. Mullen
CPC分类号： G03F7/0392 , G03F7/022 , G03F7/023 , G03F7/105 , Y10S430/12 , Y10S430/122 , Y10S430/127
摘要： The present invention provides for a light-sensitive photoresist composition useful for imaging thick films, comprising a polymer which is insoluble in an aqueous alkali developer but becomes soluble prior to development, a photoacid generator which produces a strong acid upon irradiation and a photobleachable dye. The invention further provides for a process for imaging the photoresist of the present invention, especially where the thickness of the photoresist is up to 200 microns and where the process comprises a single exposure step.
摘要翻译： 本发明提供了一种用于成像厚膜的光敏光致抗蚀剂组合物，其包含不溶于碱性显影剂水溶液但在显影前变得可溶的聚合物，在照射时产生强酸的光致酸产生剂和可光漂白染料。 本发明进一步提供了用于对本发明的光致抗蚀剂进行成像的方法，特别是其中光致抗蚀剂的厚度高达200微米，并且其中该方法包括单次曝光步骤。
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公开(公告)号：US20070141510A1
公开(公告)日：2007-06-21
申请号：US11627545
申请日：2007-01-26
申请人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
发明人： Chunwei Chen , Ping-Hung Lu , Hong Zhuang , Mark Neisser
IPC分类号： G03C1/00
CPC分类号： G03F7/0047 , G03F7/027 , G03F7/0382 , Y10S430/106
摘要： The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator
摘要翻译： 本发明涉及一种光刻胶组合物，其适用于作为负性光致抗蚀剂的成像曝光和显影，其包含负性光致抗蚀剂组合物和平均粒度等于或大于10纳米的无机颗粒材料，其中光致抗蚀剂涂膜的厚度 大于5微米。 负光致抗蚀剂组合物选自（1）包含（i）树脂粘合剂，（ii）光致酸产生剂和（iii）交联剂）的组合物; 或（2）包含（i）树脂粘合剂，（ii）任选的可加成聚合的烯属不饱和化合物和（iii）光引发剂的组合物; 或（3）包含（i）含有至少两个侧链不饱和基团的光聚合化合物的组合物; （ii）烯属不饱和光聚合聚环氧烷亲水化合物; 和（iii）光引发剂
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公开(公告)号：US20070015080A1
公开(公告)日：2007-01-18
申请号：US11179364
申请日：2005-07-12
申请人： Medhat Toukhy , Ping-Hung Lu , Salem Mullen
发明人： Medhat Toukhy , Ping-Hung Lu , Salem Mullen
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/022 , G03F7/023 , G03F7/105 , Y10S430/12 , Y10S430/122 , Y10S430/127
摘要： The present invention provides for a light-sensitive photoresist composition useful for imaging thick films, comprising a polymer which is insoluble in an aqueous alkali developer but becomes soluble prior to development, a photoacid generator which produces a strong acid upon irradiation and a photobleachable dye. The invention further provides for a process for imaging the photoresist of the present invention, especially where the thickness of the photoresist is up to 200 microns and where the process comprises a single exposure step.
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