公开(公告)号：US11386953B2

公开(公告)日：2022-07-12

申请号：US16659608

申请日：2019-10-22

Applicant: CYBERSWARM, INC.

Inventor： Viorel-Georgel Dumitru ,  Cristina Besleaga Stan ,  Alin Velea ,  Aurelian-Catalin Galca

IPC: G11C11/56 ,  H01L27/24 ,  G11C13/00 ,  H01L45/00

Abstract: A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.

公开(公告)号：US11183240B2

公开(公告)日：2021-11-23

申请号：US17158731

申请日：2021-01-26

Applicant: CYBERSWARM, INC

Inventor： Viorel-Georgel Dumitru ,  Cristina Besleaga Stan ,  Alin Velea ,  Aurelian-Catalin Galca

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56

Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

公开(公告)号：US12069870B2

公开(公告)日：2024-08-20

申请号：US16431885

申请日：2019-06-05

Applicant: CYBERSWARM, INC.

Inventor： Viorel-Georgel Dumitru ,  Cristina Besleaga Stan ,  Alin Velea ,  Aurelian-Catalin Galca

IPC: H10B63/00 ,  G06N3/063 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/82 ,  G06N3/063 ,  H10B63/30 ,  H10N70/253 ,  H10N70/821 ,  H10N70/8613

Abstract: A synapse crossbar array device is provided. The synapse crossbar array device includes a plurality of Indium-Gallium-Zinc-Oxide (IGZO) thin film transistors (TFTs) and a plurality of IGZO resistive synapses. Each IGZO resistive synapse includes a IGZO resistive layer, a first electrical contact electrically coupled to one of the plurality of IGZO TFTs and a second electrical contact electrically connected to one of a plurality of column connection lines. The first electrical contact and the second electrical contact of each IGZO resistive synapse are disposed on the IGZO resistive layer of the resistive synapse. The synapse crossbar array device includes IGZO resistive synapses that have, each of them, an established resistance value. The synapse crossbar array may be fully transparent and may be integrated into the displays with which portable devices are provided.

公开(公告)号：US20240138275A1

公开(公告)日：2024-04-25

申请号：US18048594

申请日：2022-10-20

Applicant: CYBERSWARM, INC.

Inventor： Viorel-Georgel Dumitru ,  Octavian-Narcis Ionescu

IPC: H01L45/00 ,  G11C11/56 ,  G11C13/00

CPC classification number: H01L45/147 ,  G11C11/5685 ,  G11C13/004 ,  G11C13/0069 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/1625 ,  G11C2213/15 ,  G11C2213/31

Abstract: One or more embodiments disclosed herein describe a nonvolatile, analog programmable resistive memory with a plurality of memory states. The programmable resistive memory includes a substrate, an IGZO resistive layer and electrical contacts. The electrical contacts are deposited on the IGZO layer, in the same plane. The electrical contacts may have various shapes in order to obtain spatially variable distances between the electrical contacts. The resistance of the resistive memory can be brought from an initial low value to a plurality of various higher values by applying electrical voltage pulses with various durations and various amplitudes and/or by applying one or more DC voltage sweeps. Also, the high voltage limit during the DC voltage sweeps could be set at values ranging from few volts to few tens of volts. In this manner, the IGZO programmable resistive memory could be set in a plurality of memory states.

公开(公告)号：US11705198B2

公开(公告)日：2023-07-18

申请号：US17531127

申请日：2021-11-19

Applicant: CYBERSWARM, INC.

Inventor： Viorel-Georgel Dumitru ,  Cristina Besleaga Stan ,  Alin Velea ,  Aurelian-Catalin Galea

IPC: G11C11/00 ,  G11C13/00 ,  G11C11/56

CPC classification number: G11C13/0069 ,  G11C11/5685 ,  G11C13/004 ,  G11C13/0007 ,  G11C13/0038

Abstract: A programmable resistive memory element and a method of adjusting a resistance of a programmable resistive memory element are provided. The programmable resistive memory element includes at least one resistive memory element. Each resistive memory element includes an Indium-Gallium-Zinc-Oxide (IGZO) resistive layer, a first electrical contact and a second electrical contact. The first and second electrical contacts are disposed on the IGZO resistive layer in the same plane. The programmable resistive memory element includes a voltage generator coupled to the first and second electrical contacts, constructed and arranged to apply a thermal treatment to the resistive memory element to adjust a resistance of the resistive memory element.

公开(公告)号：US11455258B2

公开(公告)日：2022-09-27

申请号：US16532003

申请日：2019-08-05

Applicant: CYBERSWARM, INC.

Inventor： Octavian Narcis Ionescu ,  Viorel-Georgel Dumitru ,  Constantin-Ionut Marica ,  Victor-Andrei Marica ,  Miha Tiberiu Luca ,  Stefan-Laurentiu Pircalabu

IPC: G06F12/14 ,  G11C13/00 ,  G06F21/60 ,  G11C11/56

Abstract: A system and method for generating encryption keys on multiple devices, without transferring the keys. At least one sender memristor is set using at least one sender setting value. At least one sender reading value is applied to the at least one sender memristor to generate at least one sender output value. A string of characters is determined from the at least one output value based on a sender table. Data is encrypted with the string of characters. The encrypted data is transmitted to a receiver through a first channel. The at least one sender setting value or the at least one sender reading value or both is transmitted to the receiver through a second channel different from the first channel. The at least one sender setting value or the at least one sender reading value or both is applied to at least one receiver memristor to generate at least one receiver output value. A receiver table is used to determine the string of characters from the at least one receiver output value. The encrypted data is decrypted with the string of characters from the receiver table.

公开(公告)号：US20210042243A1

公开(公告)日：2021-02-11

申请号：US16532003

申请日：2019-08-05

Applicant: CYBERSWARM, INC.

Inventor： Octavian Narcis Ionescu ,  Viorel-Georgel Dumitru ,  Constantin-Ionut Marica ,  Victor-Andrei Marica ,  Miha Tiberiu Luca ,  Stefan-Laurentiu Pircalabu

IPC: G06F12/14 ,  G11C13/00 ,  G11C11/56 ,  G06F21/60

Abstract: A system and method for generating encryption keys on multiple devices, without transferring the keys. At least one sender memristor is set using at least one sender setting value. At least one sender reading value is applied to the at least one sender memristor to generate at least one sender output value. A string of characters is determined from the at least one output value based on a sender table. Data is encrypted with the string of characters. The encrypted data is transmitted to a receiver through a first channel. The at least one sender setting value or the at least one sender reading value or both is transmitted to the receiver through a second channel different from the first channel. The at least one sender setting value or the at least one sender reading value or both is applied to at least one receiver memristor to generate at least one receiver output value. A receiver table is used to determine the string of characters from the at least one receiver output value. The encrypted data is decrypted with the string of characters from the receiver table.

公开(公告)号：US20240237565A9

公开(公告)日：2024-07-11

申请号：US18048594

申请日：2022-10-21

Applicant: CYBERSWARM, INC.

Inventor： Viorel-Georgel Dumitru ,  Octavian-Narcis Ionescu

IPC: H01L45/00 ,  G11C11/56 ,  G11C13/00

CPC classification number: H01L45/147 ,  G11C11/5685 ,  G11C13/004 ,  G11C13/0069 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/1625 ,  G11C2213/15 ,  G11C2213/31

Abstract: One or more embodiments disclosed herein describe a nonvolatile, analog programmable resistive memory with a plurality of memory states. The programmable resistive memory includes a substrate, an IGZO resistive layer and electrical contacts. The electrical contacts are deposited on the IGZO layer, in the same plane. The electrical contacts may have various shapes in order to obtain spatially variable distances between the electrical contacts. The resistance of the resistive memory can be brought from an initial low value to a plurality of various higher values by applying electrical voltage pulses with various durations and various amplitudes and/or by applying one or more DC voltage sweeps. Also, the high voltage limit during the DC voltage sweeps could be set at values ranging from few volts to few tens of volts. In this manner, the IGZO programmable resistive memory could be set in a plurality of memory states.

公开(公告)号：US11356422B2

公开(公告)日：2022-06-07

申请号：US16672044

申请日：2019-11-01

Applicant: CYBERSWARM, INC.

Inventor： Viorel-Georgel Dumitru ,  Stefan-Laurentiu Pircalabu ,  Octavian-Narcis Ionescu ,  Constantin-Ionut Marica ,  Victor-Andrei Marica ,  Mihai Tiberiu Luca

IPC: H04L9/08 ,  H04L9/40 ,  H04L9/14

Abstract: A system and method used for generating encryption keys on multiple devices and for encrypted data transfer between two or multiple devices. A sender system includes at least one sender device with nonlinear I-V characteristics. A receiver system includes at least one receiver device with nonlinear I-V characteristics. The at least one sender device with nonlinear I-V characteristics generates at least one sender output value used to create a string of characters or bits or bytes or numbers. The string of characters is used to encrypt data which is sent to the receiver device. The at least one receiver device with nonlinear I-V characteristics generates at least one receiver output value, and uses the at least one receiver output value to create the string of characters from the at least one receiver output value. A receiver processing unit generates the data from the encrypted data using the string of characters.

公开(公告)号：US20210136044A1

公开(公告)日：2021-05-06

申请号：US16672044

申请日：2019-11-01

Applicant: CYBERSWARM, INC.

Inventor： Viorel-Georgel Dumitru ,  Stefan-Laurentiu Pircalabu ,  Octavian-Narcis Ionescu ,  Constantin-Ionut Marica ,  Victor-Andrei Marica ,  Mihai Tiberiu Luca

IPC: H04L29/06 ,  H04L9/14 ,  H04L9/08

Abstract: A system and method used for generating encryption keys on multiple devices and for encrypted data transfer between two or multiple devices. A sender system includes at least one sender device with nonlinear I-V characteristics. A receiver system includes at least one receiver device with nonlinear I-V characteristics. The at least one sender device with nonlinear I-V characteristics generates at least one sender output value used to create a string of characters or bits or bytes or numbers. The string of characters is used to encrypt data which is sent to the receiver device. The at least one receiver device with nonlinear I-V characteristics generates at least one receiver output value, and uses the at least one receiver output value to create the string of characters from the at least one receiver output value. A receiver processing unit generates the data from the encrypted data using the string of characters.